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Chin. Phys. B, 2011, Vol. 20(9): 097703    DOI: 10.1088/1674-1056/20/9/097703
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Bipolar resistive switching in Cr-doped TiOx thin films

Xing Zhong-Wen(邢钟文)a)b)†, X. Chenb), N. J. Wub), and A. Ignatievb)
a National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China; b  Center for Advanced Materials and Department of Physics, University of Houston, Houston, TX 77204, USA
Abstract  The electric-pulse-induced resistive switching effect is studied for Ti0.85Cr0.15Ox (TCO) films grown on Ir—Si substrates by pulsed laser deposition. Such a TCO device exhibits bipolar switching behaviour with an electric-pulse-induced resistance ratio as large as about 1000% and threshold voltages smaller than 2 V. The resistive switching characteristics may be understood by resistance changes of a Schottky junction composed of a metal and an n-type semiconductor, and its nonvolatility is attributed to the movement of oxygen vacancies near the interface.
Keywords:  resistive random-access memory (RRAM)      electrical-pulse-induced resistive (EPIR)  
Received:  08 February 2011      Revised:  14 June 2011      Accepted manuscript online: 
PACS:  77.80.Fm (Switching phenomena)  
  73.40.-c (Electronic transport in interface structures)  
  72.20.-i (Conductivity phenomena in semiconductors and insulators)  

Cite this article: 

Xing Zhong-Wen(邢钟文), X. Chen, N. J. Wu, and A. Ignatiev Bipolar resistive switching in Cr-doped TiOx thin films 2011 Chin. Phys. B 20 097703

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