Phase transformation in Mg–Sb3Te thin films

doi:10.1088/1674-1056/23/8/087301

Abstract Mg-doped Sb₃Te films are proposed to improve the performance of phase-change memory (PCM). We prepare Mg-doped Sb₃Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb₃Te. Especially Mg_25.19(Sb₃Te)_74.81 shows higher T_c (～ 190 ℃) and larger E_a (～ 3.49 eV), which results in a better data retention maintaining for 10 yr at ～ 112 ℃. Moreover R_a/R_c value is also improved. These excellent properties make Mg-Sb-Te material a promising candidate for the phase-change memory (PCM).

Keywords: phase change memory data retention Mg-Sb-Te thermal stability

Received: 04 September 2013
Revised: 26 March 2014
Accepted manuscript online:

PACS:	73.61.At	(Metal and metallic alloys)
	78.66.Jg	(Amorphous semiconductors; glasses)
	68.60.Dv	(Thermal stability; thermal effects)

Fund: Project supported by the National Key Basic Research Program, China (Grant No. 2012CB722703), the National Natural Science Foundation of China (Grant Nos. 61008041, 61377061, and 61306147), the Program for Innovative Research Team of Ningbo City (Grant No. 2009B21007), and the K. C. Wong Magna Fund in Ningbo University, China.

Corresponding Authors: Shen Xiang
E-mail: shenxiang@nbu.edu.cn

Cite this article:

Li Jun-Jian (李军建), Wang Guo-Xiang (王国祥), Chen Yi-Min (陈益敏), Shen Xiang (沈祥), Nie Qiu-Hua (聂秋华), Lü Ye-Gang (吕业刚), Dai Shi-Xun (戴世勋), Xu Tie-Feng (徐铁锋) Phase transformation in Mg–Sb₃Te thin films 2014 Chin. Phys. B 23 087301

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Phase transformation in Mg–Sb₃Te thin films