Generic meminductive characteristics ofswitched reluctance machines

doi:10.1088/1674-1056/24/6/068401

Abstract

The meminductive system can be regarded as the generalization of the meminductor. This paper focuses on exploring the generic meminductive characteristics of the switched reluctance machine (SRM). The dynamical equations of SRM systems are derived and discussed in comparison with the typical constitutive relation equations of the meminductive system. Memory ability and pinched hysteresis loop (PHL) are taken as the indicative fingerprints to draw forth the theoretically comparative analysis. Based on the theoretical analysis, in addition to simulation and experimental confirmation, it can be concluded that from the viewpoint of circuit, SRM can be considered as a generic meminductive system.

Keywords: memory ability meminductive hysteresis loop switched reluctance machine

Received: 10 January 2015
Revised: 19 January 2015
Accepted manuscript online:

PACS:	84.30.Bv	(Circuit theory)
	84.50.+d	(Electric motors)
	85.25.Hv	(Superconducting logic elements and memory devices; microelectronic circuits)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 51277174), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120095110019), a Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the Research and Innovation Program of Postgraduates of Jiangsu Province, China (Grant No. KYLX_1382).

Corresponding Authors: Chen Hao
E-mail: chenhaocumt@tom.com

About author: 84.30.Bv; 84.50.+d; 85.25.Hv

Cite this article:

Liang Yan (梁燕), Chen Hao (陈昊), Liu Hua-Jian (刘华建), Shi Jiao-Tong (石交通) Generic meminductive characteristics ofswitched reluctance machines 2015 Chin. Phys. B 24 068401

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