|
|
Other articles related with "mobility"：
|
|
48101 |
Xin Liu(刘新), Zhi-Long Chen(陈之龙), Hu Wang(王虎), Wen-Qing Zhang(张雯清), Hao Dong(董昊), Peng-Xiang Wang(王鹏祥), and Yu-Chuan Shao(邵宇川) |
| |
|
Stable photocurrent—voltage characteristics of perovskite single crystal detectors obtained by pulsed bias |
| |
|
|
Chin. Phys. B
2024 Vol.33 (4): 48101-048101
[Abstract]
(63)
[HTML 1 KB]
[PDF 2729 KB]
(46)
|
|
|
38501 |
Zhaoyao Pan(潘赵耀), Jinpeng Yang(杨金彭), and Xiaoshuang Shen(沈小双) |
| |
|
Modeling the performance of perovskite solar cells with inserting porous insulating alumina nanoplates |
| |
|
|
Chin. Phys. B
2024 Vol.33 (3): 38501-038501
[Abstract]
(54)
[HTML 0 KB]
[PDF 1033 KB]
(61)
|
|
|
15203 |
Long Chen(陈龙), Zi-Chen Kan(阚子晨), Wei-Fu Gao(高维富), Ping Duan(段萍), Jun-Yu Chen(陈俊宇), Cong-Qi Tan(檀聪琦), and Zuo-Jun Cui(崔作君) |
| |
|
Growth mechanism and characteristics of electron drift instability in Hall thruster with different propellant types |
| |
|
|
Chin. Phys. B
2024 Vol.33 (1): 15203-15203
[Abstract]
(85)
[HTML 1 KB]
[PDF 14453 KB]
(83)
|
|
|
127202 |
Qiyun Tang(汤起芸) and Yan He(贺言) |
| |
|
Mobility edges in one-dimensional finite-sized models with large quasi-periodic disorders |
| |
|
|
Chin. Phys. B
2023 Vol.32 (12): 127202-127202
[Abstract]
(92)
[HTML 0 KB]
[PDF 15416 KB]
(32)
|
|
|
97204 |
Sheng-Lian Jiang(蒋盛莲), Yanxia Liu(刘彦霞), and Li-Jun Lang(郎利君) |
| |
|
General mapping of one-dimensional non-Hermitian mosaic models to non-mosaic counterparts: Mobility edges and Lyapunov exponents |
| |
|
|
Chin. Phys. B
2023 Vol.32 (9): 97204-097204
[Abstract]
(263)
[HTML 1 KB]
[PDF 2083 KB]
(359)
|
|
|
67305 |
Peng Zhang(张鹏), Miao Li(李苗), Jun-Wen Chen(陈俊文), Jia-Zhi Liu(刘加志), and Xiao-Hua Ma(马晓华) |
| |
|
Research on self-supporting T-shaped gate structure of GaN-based HEMT devices |
| |
|
|
Chin. Phys. B
2023 Vol.32 (6): 67305-067305
[Abstract]
(143)
[HTML 1 KB]
[PDF 1459 KB]
(27)
|
|
|
27102 |
Tong Liu(刘通) and Shujie Cheng(成书杰) |
| |
|
Mobility edges generated by the non-Hermitian flatband lattice |
| |
|
|
Chin. Phys. B
2023 Vol.32 (2): 27102-027102
[Abstract]
(240)
[HTML 0 KB]
[PDF 2323 KB]
(93)
|
|
|
20505 |
Wei Du(杜威), Kao Jia(贾考), Zhi-Long Shi(施志龙), and Lin-Ru Nie(聂林如) |
| |
|
Current bifurcation, reversals and multiple mobility transitions of dipole in alternating electric fields |
| |
|
|
Chin. Phys. B
2023 Vol.32 (2): 20505-020505
[Abstract]
(257)
[HTML 0 KB]
[PDF 718 KB]
(23)
|
|
|
110502 |
Yan He(贺言), Hua-Kai Xu(许华慨), and Gang Ouyang(欧阳钢) |
| |
|
Interface modulated electron mobility enhancement in core-shell nanowires |
| |
|
|
Chin. Phys. B
2022 Vol.31 (11): 110502-110502
[Abstract]
(284)
[HTML 1 KB]
[PDF 785 KB]
(144)
|
|
|
117202 |
Xin Zhao(赵昕), Xuanwei Zhao(赵轩为), Liwei Lin(林黎蔚), Ding Ren(任丁), Bo Liu(刘波), and Ran Ang(昂然) |
| |
|
Electron delocalization enhances the thermoelectric performance of misfit layer compound (Sn1-xBixS)1.2(TiS2)2 |
| |
|
|
Chin. Phys. B
2022 Vol.31 (11): 117202-117202
[Abstract]
(295)
[HTML 1 KB]
[PDF 2000 KB]
(120)
|
|
|
68501 |
Yun-Long He(何云龙), Fang Zhang(张方), Kai Liu(刘凯), Yue-Hua Hong(洪悦华), Xue-Feng Zheng(郑雪峰),Chong Wang(王冲), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
| |
|
Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate |
| |
|
|
Chin. Phys. B
2022 Vol.31 (6): 68501-068501
[Abstract]
(381)
[HTML 1 KB]
[PDF 1465 KB]
(106)
|
|
|
68504 |
Pezhman Sheykholeslami-Nasab, Mahdi Davoudi-Darareh, and Mohammad Hassan Yousefi |
| |
|
Modeling and numerical simulation of electrical and optical characteristics of a quantum dot light-emitting diode based on the hopping mobility model: Influence of quantum dot concentration |
| |
|
|
Chin. Phys. B
2022 Vol.31 (6): 68504-068504
[Abstract]
(270)
[HTML 1 KB]
[PDF 1170 KB]
(72)
|
|
|
57301 |
Xinchuang Zhang(张新创), Mei Wu(武玫), Bin Hou(侯斌), Xuerui Niu(牛雪锐), Hao Lu(芦浩), Fuchun Jia(贾富春), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
| |
|
Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment |
| |
|
|
Chin. Phys. B
2022 Vol.31 (5): 57301-057301
[Abstract]
(370)
[HTML 1 KB]
[PDF 2309 KB]
(152)
|
|
|
57103 |
Wen-Chong Li(李文充), Ling-Xiao Zhao(赵凌霄), Hai-Jun Zhao(赵海军),Gen-Fu Chen(陈根富), and Zhi-Xiang Shi(施智祥) |
| |
|
Maximum entropy mobility spectrum analysis for the type-I Weyl semimetal TaAs |
| |
|
|
Chin. Phys. B
2022 Vol.31 (5): 57103-057103
[Abstract]
(303)
[HTML 1 KB]
[PDF 989 KB]
(58)
|
|
|
58505 |
Wen-Lu Yang(杨文璐), Lin-An Yang(杨林安), Fei-Xiang Shen(申飞翔), Hao Zou(邹浩), Yang Li(李杨), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
| |
|
Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications |
| |
|
|
Chin. Phys. B
2022 Vol.31 (5): 58505-058505
[Abstract]
(385)
[HTML 1 KB]
[PDF 1059 KB]
(136)
|
|
|
27101 |
Tong Liu(刘通), Shujie Cheng(成书杰), Rui Zhang(张锐), Rongrong Ruan(阮榕榕), and Houxun Jiang(姜厚勋) |
| |
|
Invariable mobility edge in a quasiperiodic lattice |
| |
|
|
Chin. Phys. B
2022 Vol.31 (2): 27101-027101
[Abstract]
(374)
[HTML 0 KB]
[PDF 1288 KB]
(90)
|
|
|
18502 |
Yan-Fu Wang(王彦富), Bo Wang(王博), Rui-Ze Feng(封瑞泽), Zhi-Hang Tong(童志航), Tong Liu(刘桐), Peng Ding(丁芃), Yong-Bo Su(苏永波), Jing-Tao Zhou(周静涛), Feng Yang(杨枫), Wu-Chang Ding(丁武昌), and Zhi Jin(金智) |
| |
|
Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology |
| |
|
|
Chin. Phys. B
2022 Vol.31 (1): 18502-018502
[Abstract]
(454)
[HTML 0 KB]
[PDF 1384 KB]
(54)
|
|
|
18101 |
Jia-Le Tang(唐家乐) and Chao Liu(刘超) |
| |
|
Removal of GaN film over AlGaN with inductively coupled BCl3/Ar atomic layer etch |
| |
|
|
Chin. Phys. B
2022 Vol.31 (1): 18101-018101
[Abstract]
(375)
[HTML 0 KB]
[PDF 1861 KB]
(123)
|
|
|
17401 |
Shujie Cheng(成书杰) and Xianlong Gao(高先龙) |
| |
|
Majorana zero modes, unconventional real-complex transition, and mobility edges in a one-dimensional non-Hermitian quasi-periodic lattice |
| |
|
|
Chin. Phys. B
2022 Vol.31 (1): 17401-017401
[Abstract]
(437)
[HTML 0 KB]
[PDF 2739 KB]
(284)
|
|
|
97202 |
Xiang-Ping Jiang(蒋相平), Yi Qiao(乔艺), and Jun-Peng Cao(曹俊鹏) |
| |
|
Mobility edges and reentrant localization in one-dimensional dimerized non-Hermitian quasiperiodic lattice |
| |
|
|
Chin. Phys. B
2021 Vol.30 (9): 97202-097202
[Abstract]
(433)
[HTML 1 KB]
[PDF 10206 KB]
(187)
|
|
|
98502 |
Qi-Wei Li(李奇威), Jing Sun(孙静), Fu-Xing Li(李福星), Chang-Chun Chai(柴常春), Jun Ding(丁君), and Jin-Yong Fang(方进勇) |
| |
|
C band microwave damage characteristics of pseudomorphic high electron mobility transistor |
| |
|
|
Chin. Phys. B
2021 Vol.30 (9): 98502-098502
[Abstract]
(375)
[HTML 1 KB]
[PDF 3175 KB]
(110)
|
|
|
97201 |
Yao Li(李姚) and Hong-Bin Pu(蒲红斌) |
| |
|
Fang-Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures |
| |
|
|
Chin. Phys. B
2021 Vol.30 (9): 97201-097201
[Abstract]
(479)
[HTML 1 KB]
[PDF 2173 KB]
(80)
|
|
|
87202 |
Kaiyao Zhou(周楷尧), Jun Deng(邓俊), Long Chen(陈龙), Wei Xia(夏威), Yanfeng Guo(郭艳峰), Yang Yang(杨洋), Jian-Gang Guo(郭建刚), and Liwei Guo(郭丽伟) |
| |
|
Observation of large in-plane anisotropic transport in van der Waals semiconductor Nb2SiTe4 |
| |
|
|
Chin. Phys. B
2021 Vol.30 (8): 87202-087202
[Abstract]
(381)
[HTML 1 KB]
[PDF 1880 KB]
(184)
|
|
|
87201 |
Qiao-Lin Yang(杨巧林), Hui-Xiong Deng(邓惠雄), Su-Huai Wei(魏苏淮), and Jun-Wei Luo(骆军委) |
| |
|
Group velocity matters for accurate prediction of phonon-limited carrier mobility |
| |
|
|
Chin. Phys. B
2021 Vol.30 (8): 87201-087201
[Abstract]
(457)
[HTML 1 KB]
[PDF 828 KB]
(265)
|
|
|
78104 |
Shuang Sun(孙爽), Jian-Huan Wang(王建桓), Bao-Tong Zhang(张宝通), Xiao-Kang Li(李小康), Qi-Feng Cai(蔡其峰), Xia An(安霞), Xiao-Yan Xu(许晓燕), Jian-Jun Zhang(张建军), and Ming Li(黎明) |
| |
|
Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technology |
| |
|
|
Chin. Phys. B
2021 Vol.30 (7): 78104-078104
[Abstract]
(431)
[HTML 1 KB]
[PDF 4140 KB]
(111)
|
|
|
77302 |
Wen-Xiao Shi(时文潇), Hui Zhang(张慧), Shao-Jin Qi(齐少锦), Jin-E Zhang(张金娥), Hai-Lin Huang(黄海林), Bao-Gen Shen(沈保根), Yuan-Sha Chen(陈沅沙), and Ji-Rong Sun(孙继荣) |
| |
|
Thermodynamic criterion for searching high mobility two-dimensional electron gas at KTaO3 interface |
| |
|
|
Chin. Phys. B
2021 Vol.30 (7): 77302-077302
[Abstract]
(449)
[HTML 1 KB]
[PDF 1294 KB]
(197)
|
|
|
47103 |
Si-De Song(宋思德), Su-Zhen Wu(吴素贞), Guo-Zhu Liu(刘国柱), Wei Zhao(赵伟), Yin-Quan Wang(王印权), Jian-Wei Wu(吴建伟), and Qi He(贺琪) |
| |
|
Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor |
| |
|
|
Chin. Phys. B
2021 Vol.30 (4): 47103-
[Abstract]
(336)
[HTML 1 KB]
[PDF 2118 KB]
(102)
|
|
|
40502 |
Hao Zou(邹浩), Lin-An Yang(杨林安), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
| |
|
Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors |
| |
|
|
Chin. Phys. B
2021 Vol.30 (4): 40502-
[Abstract]
(548)
[HTML 1 KB]
[PDF 3285 KB]
(124)
|
|
|
18102 |
Zhao Li(李钊), Jing-Ping Xu(徐静平), Lu Liu(刘璐), and Xin-Yuan Zhao(赵心愿) |
| |
|
Enhanced mobility of MoS2 field-effect transistors by combining defect passivation with dielectric-screening effect |
| |
|
|
Chin. Phys. B
2021 Vol.30 (1): 18102-
[Abstract]
(557)
[HTML 1 KB]
[PDF 878 KB]
(158)
|
|
|
128501 |
Dan-Yang Chen(陈丹旸), Jin-Shun Bi(毕津顺), Kai Xi(习凯), and Gang Wang(王刚) |
| |
|
PBTI stress-induced 1/ f noise in n-channel FinFET |
| |
|
|
Chin. Phys. B
2020 Vol.29 (12): 128501-
[Abstract]
(450)
[HTML 1 KB]
[PDF 1174 KB]
(32)
|
|
|
97201 |
Xiaozhang Chen(陈孝章), Lehua Gu(顾乐华), Lan Liu(刘岚), Huawei Chen(陈华威), Jingyu Li(栗敬俣), Chunsen Liu(刘春森), Peng Zhou(周鹏) |
| |
|
Temperature-switching logic in MoS2 single transistors |
| |
|
|
Chin. Phys. B
2020 Vol.29 (9): 97201-097201
[Abstract]
(648)
[HTML 0 KB]
[PDF 1020 KB]
(123)
|
|
|
68102 |
Jingyue Wang(王璟岳), Jingjing Niu(牛晶晶), Xinqi Li(李新祺), Xiumei Ma(马秀梅), Yuan Yao(姚湲), Xiaosong Wu(吴孝松) |
| |
|
Facile and fast growth of high mobility nanoribbons of ZrTe5 |
| |
|
|
Chin. Phys. B
2020 Vol.29 (6): 68102-068102
[Abstract]
(680)
[HTML 1 KB]
[PDF 2011 KB]
(219)
|
|
|
57307 |
Minhan Mi(宓珉瀚), Meng Zhang(张濛), Sheng Wu(武盛), Ling Yang(杨凌), Bin Hou(侯斌), Yuwei Zhou(周雨威), Lixin Guo(郭立新), Xiaohua Ma(马晓华), Yue Hao(郝跃) |
| |
|
High performance InAlN/GaN high electron mobility transistors for low voltage applications |
| |
|
|
Chin. Phys. B
2020 Vol.29 (5): 57307-057307
[Abstract]
(631)
[HTML 1 KB]
[PDF 1214 KB]
(190)
|
|
|
48104 |
Minglong Zhao(赵明龙), Xiansheng Tang(唐先胜), Wenxue Huo(霍雯雪), Lili Han(韩丽丽), Zhen Deng(邓震), Yang Jiang(江洋), Wenxin Wang(王文新), Hong Chen(陈弘), Chunhua Du(杜春花), Haiqiang Jia(贾海强) |
| |
|
Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate |
| |
|
|
Chin. Phys. B
2020 Vol.29 (4): 48104-048104
[Abstract]
(607)
[HTML 1 KB]
[PDF 2637 KB]
(168)
|
|
|
38505 |
Xian-Le Zhang(张先乐), Peng-Ying Chang(常鹏鹰), Gang Du(杜刚), Xiao-Yan Liu(刘晓彦) |
| |
|
Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs |
| |
|
|
Chin. Phys. B
2020 Vol.29 (3): 38505-038505
[Abstract]
(484)
[HTML 1 KB]
[PDF 667 KB]
(119)
|
|
|
23102 |
Yuan Sun(孙源), Bin Xu(徐斌), Lin Yi(易林) |
| |
|
HfN2 monolayer: A new direct-gap semiconductor with high and anisotropic carrier mobility |
| |
|
|
Chin. Phys. B
2020 Vol.29 (2): 23102-023102
[Abstract]
(653)
[HTML 1 KB]
[PDF 1343 KB]
(274)
|
|
|
128101 |
Jian-Ying Chen(陈建颖), Xin-Yuan Zhao(赵心愿), Lu Liu(刘璐), Jing-Ping Xu(徐静平) |
| |
|
Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics |
| |
|
|
Chin. Phys. B
2019 Vol.28 (12): 128101-128101
[Abstract]
(679)
[HTML 1 KB]
[PDF 1778 KB]
(173)
|
|
|
118502 |
Xiang Li(李想), Jian-Dong Sun(孙建东), Hong-Juan Huang(黄宏娟), Zhi-Peng Zhang(张志鹏), Lin Jin(靳琳), Yun-Fei Sun(孙云飞), V V Popov, Hua Qin(秦华) |
| |
|
The origin of distorted intensity pattern sensed by a lens and antenna coupled AlGaN/GaN-HEMT terahertz detector |
| |
|
|
Chin. Phys. B
2019 Vol.28 (11): 118502-118502
[Abstract]
(447)
[HTML 1 KB]
[PDF 2045 KB]
(118)
|
|
|
107301 |
Mei Ge(葛梅), Qing Cai(蔡青), Bao-Hua Zhang(张保花), Dun-Jun Chen(陈敦军), Li-Qun Hu(胡立群), Jun-Jun Xue(薛俊俊), Hai Lu(陆海), Rong Zhang(张荣), You-Dou Zheng(郑有炓) |
| |
|
Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer |
| |
|
|
Chin. Phys. B
2019 Vol.28 (10): 107301-107301
[Abstract]
(780)
[HTML 1 KB]
[PDF 1005 KB]
(264)
|
|
|
78501 |
Shu-Xiang Sun(孙树祥), Ming-Ming Chang(常明铭), Meng-Ke Li(李梦珂), Liu-Hong Ma(马刘红), Ying-Hui Zhong(钟英辉), Yu-Xiao Li(李玉晓), Peng Ding(丁芃), Zhi Jin(金智), Zhi-Chao Wei(魏志超) |
| |
|
Effect of defects properties on InP-based high electron mobility transistors |
| |
|
|
Chin. Phys. B
2019 Vol.28 (7): 78501-078501
[Abstract]
(663)
[HTML 1 KB]
[PDF 1176 KB]
(193)
|
|
|
66804 |
Ya-Mei Dou(窦亚梅), Wei-Hua Han(韩伟华), Yang-Yan Guo(郭仰岩), Xiao-Song Zhao(赵晓松), Xiao-Di Zhang(张晓迪), Xin-Yu Wu(吴歆宇), Fu-Hua Yang(杨富华) |
| |
|
Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor |
| |
|
|
Chin. Phys. B
2019 Vol.28 (6): 66804-066804
[Abstract]
(603)
[HTML 1 KB]
[PDF 600 KB]
(116)
|
|
|
48802 |
Yi-Fan Gu(顾一帆), Hui-Jing Du(杜会静), Nan-Nan Li(李楠楠), Lei Yang(杨蕾), Chun-Yu Zhou(周春宇) |
| |
|
Effect of carrier mobility on performance of perovskite solar cells |
| |
|
|
Chin. Phys. B
2019 Vol.28 (4): 48802-048802
[Abstract]
(615)
[HTML 1 KB]
[PDF 871 KB]
(318)
|
|
|
28101 |
Jing Zhang(张静), Hongliang Lv(吕红亮), Haiqiao Ni(倪海桥), Shizheng Yang(杨施政), Xiaoran Cui(崔晓然), Zhichuan Niu(牛智川), Yimen Zhang(张义门), Yuming Zhang(张玉明) |
| |
|
Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy |
| |
|
|
Chin. Phys. B
2019 Vol.28 (2): 28101-028101
[Abstract]
(803)
[HTML 1 KB]
[PDF 1447 KB]
(176)
|
|
|
18102 |
Ya-Chao Zhang(张雅超), Zhi-Zhe Wang(王之哲), Rui Guo(郭蕊), Ge Liu(刘鸽), Wei-Min Bao(包为民), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
| |
|
High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition |
| |
|
|
Chin. Phys. B
2019 Vol.28 (1): 18102-018102
[Abstract]
(577)
[HTML 1 KB]
[PDF 1276 KB]
(161)
|
|
|
10306 |
Jun Wen(文军), Jian-Qi Zhang(张建奇), Lei-Lei Yan(闫磊磊), Mang Feng(冯芒) |
| |
|
Analytical treatment of Anderson localization in a chain of trapped ions experiencing laser Bessel beams |
| |
|
|
Chin. Phys. B
2019 Vol.28 (1): 10306-010306
[Abstract]
(791)
[HTML 1 KB]
[PDF 1772 KB]
(141)
|
|
|
97201 |
Jing Zhang(张静), Hongliang Lv(吕红亮), Haiqiao Ni(倪海桥), Zhichuan Niu(牛智川), Yuming Zhang(张玉明) |
| |
|
Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors |
| |
|
|
Chin. Phys. B
2018 Vol.27 (9): 97201-097201
[Abstract]
(706)
[HTML 1 KB]
[PDF 849 KB]
(223)
|
|
|
68506 |
Xiang Li(李想), Jian-dong Sun(孙建东), Zhi-peng Zhang(张志鹏), V V Popov, Hua Qin(秦华) |
| |
|
Integration of a field-effect-transistor terahertz detector with a diagonal horn antenna |
| |
|
|
Chin. Phys. B
2018 Vol.27 (6): 68506-068506
[Abstract]
(616)
[HTML 1 KB]
[PDF 1759 KB]
(176)
|
|
|
47101 |
Jin-Lun Li(李金伦), Shao-Hui Cui(崔少辉), Jian-Xing Xu(徐建星), Xiao-Ran Cui(崔晓然), Chun-Yan Guo(郭春妍), Ben Ma(马奔), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川) |
| |
|
Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector |
| |
|
|
Chin. Phys. B
2018 Vol.27 (4): 47101-047101
[Abstract]
(736)
[HTML 1 KB]
[PDF 1343 KB]
(275)
|
|
|
117201 |
Long-Yan Gong(巩龙延), You-Gen Ding(丁友根), Yong-Qiang Deng(邓永强) |
| |
|
Uncertainties of clock and shift operators for an electron in one-dimensional nonuniform lattice systems |
| |
|
|
Chin. Phys. B
2017 Vol.26 (11): 117201-117201
[Abstract]
(567)
[HTML 1 KB]
[PDF 4454 KB]
(143)
|
|
|
106301 |
Jun-Fei Wang(王俊斐), Xiao-Nan Fu(富笑男), Jun-Tao Wang(王俊涛) |
| |
|
First-principles analysis of the structural, electronic, and elastic properties of cubic organic-inorganic perovskite HC(NH2)2PbI3 |
| |
|
|
Chin. Phys. B
2017 Vol.26 (10): 106301-106301
[Abstract]
(559)
[HTML 1 KB]
[PDF 366 KB]
(527)
|
|
|
86202 |
Li-Ying Tan(谭丽英), Fa-Jun Li(黎发军), Xiao-Long Xie(谢小龙), Yan-Ping Zhou(周彦平), Jing Ma(马晶) |
| |
|
Proton radiation effect on GaAs/AlGaAs core-shell ensemble nanowires photo-detector |
| |
|
|
Chin. Phys. B
2017 Vol.26 (8): 86202-086202
[Abstract]
(570)
[HTML 1 KB]
[PDF 439 KB]
(228)
|
|
|
77202 |
Long-Yan Gong(巩龙延), Xiao-Xin Zhao(赵小新) |
| |
|
Phase diagram of a family of one-dimensional nearest-neighbor tight-binding models with an exact mobility edge |
| |
|
|
Chin. Phys. B
2017 Vol.26 (7): 77202-077202
[Abstract]
(640)
[HTML 1 KB]
[PDF 1331 KB]
(222)
|
|
|
66801 |
Rui-Song Ma(马瑞松), Qing Huan(郇庆), Liang-Mei Wu(吴良妹), Jia-Hao Yan(严佳浩), Yu-Yang Zhang(张余洋), Li-Hong Bao(鲍丽宏), Yun-Qi Liu(刘云圻), Shi-Xuan Du(杜世萱), Hong-Jun Gao(高鸿钧) |
| |
|
Direct measurements of conductivity and mobility in millimeter-sized single-crystalline graphene via van der Pauw geometry |
| |
|
|
Chin. Phys. B
2017 Vol.26 (6): 66801-066801
[Abstract]
(636)
[HTML 1 KB]
[PDF 2966 KB]
(606)
|
|
|
37307 |
Xuefei Li(李学飞), Xiong Xiong(熊雄), Yanqing Wu(吴燕庆) |
| |
|
Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices |
| |
|
|
Chin. Phys. B
2017 Vol.26 (3): 37307-037307
[Abstract]
(744)
[HTML 1 KB]
[PDF 5935 KB]
(478)
|
|
|
47305 |
Hui Wang(王辉), Ning Wang(王宁), Ling-Li Jiang(蒋苓利), Xin-Peng Lin(林新鹏), Hai-Yue Zhao(赵海月), Hong-Yu Yu(于洪宇) |
| |
|
A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates |
| |
|
|
Chin. Phys. B
2017 Vol.26 (4): 47305-047305
[Abstract]
(769)
[HTML 1 KB]
[PDF 684 KB]
(434)
|
|
|
117305 |
Yun-Long He(何云龙), Chong Wang(王冲), Min-Han Mi(宓珉瀚), Xue-Feng Zheng(郑雪峰), Meng Zhang(张濛), Meng-Di Zhao(赵梦荻), Heng-Shuang Zhang(张恒爽), Li-Xiang Chen(陈立香), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
| |
|
Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment |
| |
|
|
Chin. Phys. B
2016 Vol.25 (11): 117305-117305
[Abstract]
(872)
[HTML 1 KB]
[PDF 1879 KB]
(432)
|
|
|
117301 |
Miao Geng(耿苗), Pei-Xian Li(李培咸), Wei-Jun Luo(罗卫军), Peng-Peng Sun(孙朋朋), Rong Zhang(张蓉), Xiao-Hua Ma(马晓华) |
| |
|
Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method |
| |
|
|
Chin. Phys. B
2016 Vol.25 (11): 117301-117301
[Abstract]
(745)
[HTML 1 KB]
[PDF 1091 KB]
(1216)
|
|
|
107202 |
Li-Juan Wu(伍丽娟), Yu-Qing Zhao(赵宇清), Chang-Wen Chen(陈畅文), Ling-Zhi Wang(王琳芝), Biao Liu(刘标), Meng-Qiu Cai(蔡孟秋) |
| |
|
First-principles hybrid functional study of the electronic structure and charge carrier mobility in perovskite CH3NH3SnI3 |
| |
|
|
Chin. Phys. B
2016 Vol.25 (10): 107202-107202
[Abstract]
(782)
[HTML 1 KB]
[PDF 1755 KB]
(834)
|
|
|
96801 |
Shu-Xing Zhou(周书星), Ming Qi(齐鸣), Li-Kun Ai(艾立鹍), An-Huai Xu(徐安怀) |
| |
|
Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based InxGa1-xAs/In0.52Al0.48As HEMT structures |
| |
|
|
Chin. Phys. B
2016 Vol.25 (9): 96801-096801
[Abstract]
(628)
[HTML 1 KB]
[PDF 303 KB]
(374)
|
|
|
68103 |
Liu-Hong Ma(马刘红), Wei-Hua Han(韩伟华), Hao Wang(王昊), Qi-feng Lyu(吕奇峰), Wang Zhang(张望), Xiang Yang(杨香), Fu-Hua Yang(杨富华) |
| |
|
Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing |
| |
|
|
Chin. Phys. B
2016 Vol.25 (6): 68103-068103
[Abstract]
(697)
[HTML 1 KB]
[PDF 1793 KB]
(379)
|
|
|
37306 |
Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Yan-Jing He(何艳静), Guan-Nan Tang(唐冠男),Yue-Hu Wang(王悦湖), Yi-Meng Zhang(张艺蒙), Hui Guo(郭辉), Ren-Xu Jia(贾仁需),Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明) |
| |
|
Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors |
| |
|
|
Chin. Phys. B
2016 Vol.25 (3): 37306-037306
[Abstract]
(649)
[HTML 0 KB]
[PDF 923 KB]
(416)
|
|
|
27303 |
Jun Luo(罗俊), Sheng-Lei Zhao(赵胜雷), Min-Han Mi(宓珉瀚), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
| |
|
Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor |
| |
|
|
Chin. Phys. B
2016 Vol.25 (2): 27303-027303
[Abstract]
(953)
[HTML 1 KB]
[PDF 496 KB]
(936)
|
|
|
13601 |
M Esen, A T Tüzemen, M Ozdemir |
| |
|
Mobility of large clusters on a semiconductor surface: Kinetic Monte Carlo simulation results |
| |
|
|
Chin. Phys. B
2016 Vol.25 (1): 13601-013601
[Abstract]
(614)
[HTML 1 KB]
[PDF 499 KB]
(319)
|
|
|
128101 |
Ma Liu-Hong (马刘红), Han Wei-Hua (韩伟华), Wang Hao (王昊), Yang Xiang (杨香), Yang Fu-Hua (杨富华) |
| |
|
Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors |
| |
|
|
Chin. Phys. B
2015 Vol.24 (12): 128101-128101
[Abstract]
(801)
[HTML 1 KB]
[PDF 1597 KB]
(410)
|
|
|
127306 |
Zhang Peng (张鹏), Zhao Sheng-Lei (赵胜雷), Xue Jun-Shuai (薛军帅), Zhu Jie-Jie (祝杰杰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
| |
|
Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors |
| |
|
|
Chin. Phys. B
2015 Vol.24 (12): 127306-127306
[Abstract]
(752)
[HTML 1 KB]
[PDF 472 KB]
(515)
|
|
|
117305 |
Luo Jun (罗俊), Zhao Sheng-Lei (赵胜雷), Mi Min-Han (宓珉瀚), Hou Bin (侯斌), Yang Xiao-Lei (杨晓蕾), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
| |
|
Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors |
| |
|
|
Chin. Phys. B
2015 Vol.24 (11): 117305-117305
[Abstract]
(762)
[HTML 1 KB]
[PDF 339 KB]
(581)
|
|
|
105201 |
Zhang Xiao-Yu (张晓渝), Tan Ren-Bing (谭仁兵), Sun Jian-Dong (孙建东), Li Xin-Xing (李欣幸), Zhou Yu (周宇), Lü Li (吕利), Qin Hua (秦华) |
| |
|
Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor |
| |
|
|
Chin. Phys. B
2015 Vol.24 (10): 105201-105201
[Abstract]
(508)
[HTML 1 KB]
[PDF 1397 KB]
(350)
|
|
|
96802 |
He Xiao-Guang (何晓光), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Zhu Jian-Jun (朱建军), Chen Ping (陈平), Liu Zong-Shun (刘宗顺), Le Ling-Cong (乐伶聪), Yang Jing (杨静), Li Xiao-Jing (李晓静), Zhang Shu-Ming (张书明), Yang Hui (杨辉) |
| |
|
Growth condition optimization and mobility enhancement throughprolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure |
| |
|
|
Chin. Phys. B
2015 Vol.24 (9): 96802-096802
[Abstract]
(698)
[HTML 1 KB]
[PDF 231 KB]
(415)
|
|
|
87306 |
Lv Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Yin Jia-Yun (尹甲运), Fang Yu-Long (房玉龙), Wang Yuan-Gang (王元刚), Tan Xin (谭鑫), Zhou Xing-Ye (周幸叶), Lin Zhao-Jun (林兆军), Ji Zi-Wu (冀子武), Cai Shu-Jun (蔡树军) |
| |
|
Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor |
| |
|
|
Chin. Phys. B
2015 Vol.24 (8): 87306-087306
[Abstract]
(734)
[HTML 1 KB]
[PDF 361 KB]
(351)
|
|
|
87305 |
Huang Jie (黄杰), Li Ming (黎明), Zhao Qian (赵倩), Gu Wen-Wen (顾雯雯), Lau Kei-May (刘纪美) |
| |
|
Hetero-epitaxy of Lg=0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications |
| |
|
|
Chin. Phys. B
2015 Vol.24 (8): 87305-087305
[Abstract]
(712)
[HTML 1 KB]
[PDF 574 KB]
(401)
|
|
|
67301 |
He Xiao-Guang (何晓光), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生) |
| |
|
Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression |
| |
|
|
Chin. Phys. B
2015 Vol.24 (6): 67301-067301
[Abstract]
(820)
[HTML 1 KB]
[PDF 473 KB]
(2236)
|
|
|
67203 |
Guo Rong-Rong (郭榕榕), Jie Wan-Qi (介万奇), Zha Gang-Qiang (查钢强), Xu Ya-Dong (徐亚东), Feng Tao (冯涛), Wang Tao (王涛), Du Zhuo-Tong (杜卓同) |
| |
|
Effect of de-trapping on carrier transport process in semi-insulating CdZnTe |
| |
|
|
Chin. Phys. B
2015 Vol.24 (6): 67203-067203
[Abstract]
(802)
[HTML 1 KB]
[PDF 2864 KB]
(405)
|
|
|
37304 |
Zhang Peng (张鹏), Zhao Sheng-Lei (赵胜雷), Hou Bin (侯斌), Wang Chong (王冲), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
| |
|
Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors |
| |
|
|
Chin. Phys. B
2015 Vol.24 (3): 37304-037304
[Abstract]
(617)
[HTML 0 KB]
[PDF 347 KB]
(470)
|
|
|
28504 |
Lü Li (吕利), Sun Jian-Dong (孙建东), Roger A. Lewis, Sun Yun-Fei (孙云飞), Wu Dong-Min (吴东岷), Cai Yong (蔡勇), Qin Hua (秦华) |
| |
|
Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor |
| |
|
|
Chin. Phys. B
2015 Vol.24 (2): 28504-028504
[Abstract]
(579)
[HTML 0 KB]
[PDF 1183 KB]
(439)
|
|
|
16201 |
Zhu Lin-Li (朱林利) |
| |
|
Electron-acoustic phonon interaction and mobility in stressed rectangular silicon nanowires |
| |
|
|
Chin. Phys. B
2015 Vol.24 (1): 16201-016201
[Abstract]
(600)
[HTML 0 KB]
[PDF 707 KB]
(324)
|
|
|
107303 |
Zhao Sheng-Lei (赵胜雷), Mi Min-Han (宓珉瀚), Hou Bin (侯斌), Luo Jun (罗俊), Wang Yi (王毅), Dai Yang (戴杨), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
| |
|
Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain |
| |
|
|
Chin. Phys. B
2014 Vol.23 (10): 107303-107303
[Abstract]
(491)
[HTML 1 KB]
[PDF 1455 KB]
(869)
|
|
|
97305 |
Zhao Sheng-Lei (赵胜雷), Wang Yuan (王媛), Yang Xiao-Lei (杨晓蕾), Lin Zhi-Yu (林志宇), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
| |
|
Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors |
| |
|
|
Chin. Phys. B
2014 Vol.23 (9): 97305-097305
[Abstract]
(592)
[HTML 1 KB]
[PDF 1027 KB]
(903)
|
|
|
97201 |
He Yun (何鋆), Chen Xiao-Qing (陈小青), Hou Xiao-Yuan (侯晓远) |
| |
|
Effect of traps’adjacency on the electric field dependence of mobility in organic systems |
| |
|
|
Chin. Phys. B
2014 Vol.23 (9): 97201-097201
[Abstract]
(530)
[HTML 1 KB]
[PDF 281 KB]
(392)
|
|
|
77105 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Lin Zhao-Jun (林兆军), Guo Hong-Yu (郭红雨), Gu Guo-Dong (顾国栋), Yin Jia-Yun (尹甲运), Wang Yuan-Gang (王元刚), Xu Peng (徐鹏), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军) |
| |
|
Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors |
| |
|
|
Chin. Phys. B
2014 Vol.23 (7): 77105-077105
[Abstract]
(647)
[HTML 1 KB]
[PDF 269 KB]
(405)
|
|
|
47201 |
Yu Ying-Xia (于英霞), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Yang Ming (杨铭), Wang Yu-Tang (王玉堂) |
| |
|
Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors |
| |
|
|
Chin. Phys. B
2014 Vol.23 (4): 47201-047201
[Abstract]
(473)
[HTML 1 KB]
[PDF 336 KB]
(478)
|
|
|
37305 |
Cao Meng-Yi (曹梦逸), Zhang Kai (张凯), Chen Yong-He (陈永和), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
| |
|
High-efficiency S-band harmonic tuning GaN amplifier |
| |
|
|
Chin. Phys. B
2014 Vol.23 (3): 37305-037305
[Abstract]
(546)
[HTML 1 KB]
[PDF 419 KB]
(801)
|
|
|
37302 |
Wen Hui-Juan (温慧娟), Zhang Jin-Cheng (张进成), Lu Xiao-Li (陆小力), Wang Zhi-Zhe (王之哲), Ha Wei (哈微), Ge Sha-Sha (葛莎莎), Cao Rong-Tao (曹荣涛), Hao Yue (郝跃) |
| |
|
Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer |
| |
|
|
Chin. Phys. B
2014 Vol.23 (3): 37302-037302
[Abstract]
(599)
[HTML 1 KB]
[PDF 878 KB]
(507)
|
|
|
38501 |
Wang Li-Dan (汪丽丹), Ding Peng (丁芃), Su Yong-Bo (苏永波), Chen Jiao (陈娇), Zhang Bi-Chan (张毕禅), Jin Zhi (金智) |
| |
|
100-nm T-gate InAlAs/InGaAs InP-based HEMTs with fT=249 GHz and fmax=415 GHz |
| |
|
|
Chin. Phys. B
2014 Vol.23 (3): 38501-038501
[Abstract]
(637)
[HTML 1 KB]
[PDF 1135 KB]
(920)
|
|
|
26101 |
Chen Yong-Yue (陈勇跃), Wang Xiong (王雄), Cai Xi-Kun (才玺坤), Yuan Zi-Jian (原子健), Zhu Xia-Ming (朱夏明), Qiu Dong-Jiang (邱东江), Wu Hui-Zhen (吴惠桢) |
| |
|
Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor |
| |
|
|
Chin. Phys. B
2014 Vol.23 (2): 26101-026101
[Abstract]
(646)
[HTML 1 KB]
[PDF 1013 KB]
(1151)
|
|
|
17303 |
Ma Xiao-Hua (马晓华), Jiang Yuan-Qi (姜元祺), Wang Xin-Hua (王鑫华), Lü Min (吕敏), Zhang Huo (张霍), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇) |
| |
|
Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors |
| |
|
|
Chin. Phys. B
2014 Vol.23 (1): 17303-017303
[Abstract]
(562)
[HTML 1 KB]
[PDF 318 KB]
(750)
|
|
|
17305 |
Zhang Heng (张恒), Yang Shao-Yan (杨少延), Liu Gui-Peng (刘贵鹏), Wang Jian-Xia (王建霞), Jin Dong-Dong (金东东), Li Hui-Jie (李辉杰), Liu Xiang-Lin (刘祥林), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国) |
| |
|
Mobility limited by cluster scattering in ternary alloy quantum wires |
| |
|
|
Chin. Phys. B
2014 Vol.23 (1): 17305-017305
[Abstract]
(513)
[HTML 1 KB]
[PDF 344 KB]
(435)
|
|
|
128503 |
Zhong Ying-Hui (钟英辉), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Wang Xian-Tai (王显泰), Lü Hong-Liang (吕红亮), Liu Xin-Yu (刘新宇), Jin Zhi (金智) |
| |
|
0.15-μm T-gate In0.52Al0.48As/In0.53Ga0.47As InP-based HEMT with fmax of 390 GHz |
| |
|
|
Chin. Phys. B
2013 Vol.22 (12): 128503-128503
[Abstract]
(591)
[HTML 1 KB]
[PDF 1012 KB]
(489)
|
|
|
117306 |
Tan Ren-Bing (谭仁兵), Qin Hua (秦华), Zhang Xiao-Yu (张晓渝), Xu Wen (徐文) |
| |
|
Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors |
| |
|
|
Chin. Phys. B
2013 Vol.22 (11): 117306-117306
[Abstract]
(606)
[HTML 1 KB]
[PDF 342 KB]
(960)
|
|
|
117307 |
Zhao Sheng-Lei (赵胜雷), Chen Wei-Wei (陈伟伟), Yue Tong (岳童), Wang Yi (王毅), Luo Jun (罗俊), Mao Wei (毛维), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
| |
|
Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor |
| |
|
|
Chin. Phys. B
2013 Vol.22 (11): 117307-117307
[Abstract]
(495)
[HTML 1 KB]
[PDF 343 KB]
(497)
|
|
|
107302 |
Xue Bai-Qing (薛百清), Wang Sheng-Kai (王盛凯), Han Le (韩乐), Chang Hu-Dong (常虎东), Sun Bing (孙兵), Zhao Wei (赵威), Liu Hong-Gang (刘洪刚) |
| |
|
High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation |
| |
|
|
Chin. Phys. B
2013 Vol.22 (10): 107302-107302
[Abstract]
(540)
[HTML 1 KB]
[PDF 502 KB]
(578)
|
|
|
107201 |
Li Cong (李悰), Xu Jun (徐骏), Li Wei (李伟), Jiang Xiao-Fan (江小帆), Sun Sheng-Hua (孙胜华), Xu Ling (徐岭), Chen Kun-Ji (陈坤基) |
| |
|
Structural and electrical properties of laser-crystallized nanocrystalline Ge films and nanocrystalline Ge/SiNx multilayers |
| |
|
|
Chin. Phys. B
2013 Vol.22 (10): 107201-107201
[Abstract]
(520)
[HTML 1 KB]
[PDF 751 KB]
(678)
|
|
|
67203 |
Yu Ying-Xia (于英霞), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Wang Yu-Tang (王玉堂), Chen Hong (陈弘), Wang Zhan-Guo (王占国) |
| |
|
Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor |
| |
|
|
Chin. Phys. B
2013 Vol.22 (6): 67203-067203
[Abstract]
(663)
[HTML 1 KB]
[PDF 550 KB]
(649)
|
|
|
77305 |
Wang Jian-Xia (王建霞), Yang Shao-Yan (杨少延), Wang Jun (王俊), Liu Gui-Peng (刘贵鹏), Li Zhi-Wei (李志伟), Li Hui-Jie (李辉杰), Jin Dong-Dong (金东东), Liu Xiang-Lin (刘祥林), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国) |
| |
|
Electron mobility limited by surface and interface roughness scatterings in AlxGa1-xN/GaN quantum wells |
| |
|
|
Chin. Phys. B
2013 Vol.22 (7): 77305-077305
[Abstract]
(742)
[HTML 1 KB]
[PDF 419 KB]
(647)
|
|
|
68503 |
Wang Chong (王冲), He Yun-Long (何云龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
| |
|
AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO |
| |
|
|
Chin. Phys. B
2013 Vol.22 (6): 68503-068503
[Abstract]
(701)
[HTML 1 KB]
[PDF 359 KB]
(1267)
|
|
|
67104 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Cai Shu-Jun (蔡树军), Dun Shao-Bo (敦少博), Liu Bo (刘波), Yin Jia-Yun (尹甲运), Zhang Xiong-Wen (张雄文), Fang Yu-Long (房玉龙), Lin Zhao-Jun (林兆军), Meng Ling-Guo (孟令国), Luan Chong-Biao (栾崇彪) |
| |
|
Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors |
| |
|
|
Chin. Phys. B
2013 Vol.22 (6): 67104-067104
[Abstract]
(700)
[HTML 1 KB]
[PDF 858 KB]
(656)
|
|
|
57304 |
Zhang Kai (张凯), Cao Meng-Yi (曹梦逸), Chen Yong-He (陈永和), Yang Li-Yuan (杨丽媛), Wang Chong (王冲), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
| |
|
Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors |
| |
|
|
Chin. Phys. B
2013 Vol.22 (5): 57304-057304
[Abstract]
(614)
[HTML 1 KB]
[PDF 610 KB]
(1059)
|
|
|
26103 |
Xie Gang (谢刚), Tang Cen (汤岑), Wang Tao (汪涛), Guo Qing (郭清), Zhang Bo (张波), Sheng Kuang (盛况), Wai Tung Ng |
| |
|
An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient |
| |
|
|
Chin. Phys. B
2013 Vol.22 (2): 26103-026103
[Abstract]
(1064)
[HTML 1 KB]
[PDF 1199 KB]
(1805)
|
|
|
27201 |
Shi Lei (石磊), Feng Shi-Wei (冯士维), Guo Chun-Sheng (郭春生), Zhu Hui (朱慧), Wan Ning (万宁) |
| |
|
Degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress |
| |
|
|
Chin. Phys. B
2013 Vol.22 (2): 27201-027201
[Abstract]
(917)
[HTML 1 KB]
[PDF 262 KB]
(552)
|
|
|
17202 |
Zhang Xue-Feng (张雪锋), Wang Li (王莉), Liu Jie (刘杰), Wei Lai (魏崃), Xu Jian (许键) |
| |
|
Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation |
| |
|
|
Chin. Phys. B
2013 Vol.22 (1): 17202-017202
[Abstract]
(1064)
[HTML 0 KB]
[PDF 330 KB]
(2229)
|
|
|
107305 |
Gu Cheng-Yan (谷承艳), Liu Gui-Peng (刘贵鹏), Shi Kai (时凯), Song Ya-Feng (宋亚峰), Li Cheng-Ming (李成明), Liu Xiang-Lin (刘祥林), Yang Shao-Yan (杨少延), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国) |
| |
|
Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well |
| |
|
|
Chin. Phys. B
2012 Vol.21 (10): 107305-107305
[Abstract]
(1054)
[HTML 1 KB]
[PDF 137 KB]
(545)
|
|
|
108504 |
Sun Yun-Fei (孙云飞), Sun Jan-Dong (孙建东), Zhang Xiao-Yu (张晓渝), Qin Hua (秦华), Zhang Bao-Shun (张宝顺), Wu Dong-Min (吴东岷) |
| |
|
Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors |
| |
|
|
Chin. Phys. B
2012 Vol.21 (10): 108504-108504
[Abstract]
(1223)
[HTML 1 KB]
[PDF 3873 KB]
(1322)
|
|
|
97304 |
Li Jia (李佳), Wang Li (王丽), Feng Zhi-Hong (冯志红), Yu Cui (蔚翠), Liu Qing-Bin (刘庆彬), Dun Shao-Bo (敦少博), Cai Shu-Jun (蔡树军) |
| |
|
Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0° and 8° Si-terminated 4H-SiC substrates |
| |
|
|
Chin. Phys. B
2012 Vol.21 (9): 97304-097304
[Abstract]
(1362)
[HTML 1 KB]
[PDF 5046 KB]
(876)
|
|
|
78503 |
Chen Chao (陈超), Tian Ben-Lang (田本朗), Liu Xing-Zhao (刘兴钊), Dai Li-Ping (戴丽萍), Deng Xin-Wu (邓新武), Chen Yuan-Fu (陈远富 ) |
| |
|
The effects of 60Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors |
| |
|
|
Chin. Phys. B
2012 Vol.21 (7): 78503-078503
[Abstract]
(1419)
[HTML 1 KB]
[PDF 123 KB]
(884)
|
|
|
77304 |
Yang Li-Yuan(杨丽媛), Xue Xiao-Yong(薛晓咏), Zhang Kai(张凯) Zheng Xue-Feng(郑雪峰), Ma Xiao-Hua(马晓华), and Hao Yue(郝跃) |
| |
|
Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique |
| |
|
|
Chin. Phys. B
2012 Vol.21 (7): 77304-077304
[Abstract]
(1701)
[HTML 1 KB]
[PDF 288 KB]
(1195)
|
|
|
67306 |
Liang Shuang(梁爽), Mei Zeng-Xia(梅增霞), and Du Xiao-Long(杜小龙) |
| |
|
Modulation of electrical and optical properties of gallium-doped ZnO films by radio frequency magnetron sputtering |
| |
|
|
Chin. Phys. B
2012 Vol.21 (6): 67306-067306
[Abstract]
(1351)
[HTML 1 KB]
[PDF 232 KB]
(632)
|
|
|
67305 |
Feng Qian(冯倩), Li Qian(李倩), Xing Tao(邢韬) Wang Qiang(王强), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
| |
|
Performance of La2O3/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors |
| |
|
|
Chin. Phys. B
2012 Vol.21 (6): 67305-067305
[Abstract]
(1204)
[HTML 1 KB]
[PDF 549 KB]
(2060)
|
|
|
67201 |
Ji Dong(冀东), Liu Bing(刘冰), Lu Yan-Wu(吕燕伍), Zou Miao(邹杪), and Fan Bo-Ling(范博龄) |
| |
|
Influence of a two-dimensional electron gas on current–voltage characteristics of Al0.3Ga0.7 N/GaN high electron mobility transistors |
| |
|
|
Chin. Phys. B
2012 Vol.21 (6): 67201-067201
[Abstract]
(1288)
[HTML 1 KB]
[PDF 138 KB]
(769)
|
|
|
57201 |
Duan Bao-Xing(段宝兴) and Yang Yin-Tang(杨银堂) |
| |
|
Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer |
| |
|
|
Chin. Phys. B
2012 Vol.21 (5): 57201-057201
[Abstract]
(1375)
[HTML 1 KB]
[PDF 562 KB]
(1477)
|
|
|
37104 |
LŰ Ling(吕玲), Zhang Jin-Cheng(张进成), Xue Jun-Shuai(薛军帅), Ma Xiao-Hua(马晓华), Zhang Wei(张伟), Bi Zhi-Wei(毕志伟), Zhang Yue(张月), and Hao Yue(郝跃) |
| |
|
Neutron irradiation effects on AlGaN/GaN high electron mobility transistors |
| |
|
|
Chin. Phys. B
2012 Vol.21 (3): 37104-037104
[Abstract]
(1370)
[HTML 1 KB]
[PDF 330 KB]
(1708)
|
|
|
87307 |
Bi Zhi-Wei(毕志伟), Hu Zhen-Hua(胡振华), Mao Wei(毛维), Hao Yue(郝跃), Feng Qian(冯倩), Cao Yan-Rong(曹艳荣), Gao Zhi-Yuan(高志远), Zhang Jin-Cheng(张进成), Ma Xiao-Hua(马晓华), Chang Yong-Ming(常永明), Li Zhi-Ming(李志明), and Mei Nan(梅楠) |
| |
|
Investigation of passivation effects in AlGaN/GaN metal–insulator–semiconductor high electron-mobility transistor by gate–drain conductance dispersion study |
| |
|
|
Chin. Phys. B
2011 Vol.20 (8): 87307-087307
[Abstract]
(1332)
[HTML 1 KB]
[PDF 179 KB]
(1065)
|
|
|
68502 |
Li Hai-Ou(李海鸥), Huang Wei(黄伟), Tang Chak Wah(邓泽华), Deng Xiao-Fang(邓小芳), and Lau Kei May(刘纪美) |
| |
|
Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition |
| |
|
|
Chin. Phys. B
2011 Vol.20 (6): 68502-068502
[Abstract]
(1457)
[HTML 1 KB]
[PDF 814 KB]
(916)
|
|
|
67304 |
Ma Xiao-Hua(马晓华), Ma Ji-Gang(马骥刚), Yang Li-Yuan(杨丽媛), He Qiang(贺强), Jiao Ying(焦颖), Ma Ping(马平), and Hao Yue(郝跃) |
| |
|
Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress |
| |
|
|
Chin. Phys. B
2011 Vol.20 (6): 67304-067304
[Abstract]
(1523)
[HTML 1 KB]
[PDF 450 KB]
(1975)
|
|
|
58501 |
Quan Si(全思), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游) |
| |
|
Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high- electron-mobility transistor |
| |
|
|
Chin. Phys. B
2011 Vol.20 (5): 58501-058501
[Abstract]
(1474)
[HTML 0 KB]
[PDF 284 KB]
(841)
|
|
|
57305 |
Song Jie (宋杰), Xu Fu-Jun (许福军), Huang Cheng-Cheng (黄呈橙), Lin Fang (林芳), Wang Xin-Qiang (王新强), Yang Zhi-Jian (杨志坚), Shen Bo (沈波) |
| |
|
Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures |
| |
|
|
Chin. Phys. B
2011 Vol.20 (5): 57305-057305
[Abstract]
(1513)
[HTML 0 KB]
[PDF 923 KB]
(942)
|
|
|
36106 |
Cheng Zhi-Qun(程知群), Hu Sha(胡莎), Liu Jun(刘军), and Zhang Qi-Jun |
| |
|
Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network |
| |
|
|
Chin. Phys. B
2011 Vol.20 (3): 36106-036106
[Abstract]
(1454)
[HTML 1 KB]
[PDF 316 KB]
(1341)
|
|
|
27303 |
Ma Xiao-Hua(马晓华), Yu Hui-You(于惠游), Quan Si(全思), Yang Li-Yuan(杨丽媛), Pan Cai-Yuan(潘才渊), Yang Ling(杨凌), Wang Hao(王昊), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
| |
|
Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier |
| |
|
|
Chin. Phys. B
2011 Vol.20 (2): 27303-027303
[Abstract]
(1635)
[HTML 1 KB]
[PDF 838 KB]
(1058)
|
|
|
27202 |
Zhang Guang-Chen(张光沉), Feng Shi-Wei(冯士维), Zhou Zhou(周舟), Li Jing-Wan(李静婉),and Guo Chun-Sheng(郭春生) |
| |
|
Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method |
| |
|
|
Chin. Phys. B
2011 Vol.20 (2): 27202-027202
[Abstract]
(1538)
[HTML 0 KB]
[PDF 1563 KB]
(1554)
|
|
|
117302 |
Yang Li-Yuan(杨丽媛), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Zhang Jin-Cheng(张进成), Pan Cai-Yuan(潘才渊), Ma Ji-Gang (马骥刚), Zhang Kai(张凯), and Ma Ping(马平) |
| |
|
High temperature characteristics of AlGaN/GaN high electron mobility transistors |
| |
|
|
Chin. Phys. B
2011 Vol.20 (11): 117302-117302
[Abstract]
(1330)
[HTML 1 KB]
[PDF 359 KB]
(1800)
|
|
|
18101 |
Quan Si(全思), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游) |
| |
|
Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis |
| |
|
|
Chin. Phys. B
2011 Vol.20 (1): 18101-018101
[Abstract]
(1713)
[HTML 1 KB]
[PDF 634 KB]
(1104)
|
|
|
17306 |
Sun Qin-Jun(孙钦军), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), and Gao Li-Yan(高利岩) |
| |
|
Performance improvement in pentacene organic thin film transistors by inserting a C60 ultrathin layer |
| |
|
|
Chin. Phys. B
2011 Vol.20 (1): 17306-017306
[Abstract]
(1489)
[HTML 1 KB]
[PDF 480 KB]
(1209)
|
|
|
97307 |
Li Qiang(李强), Cheng Zeng-Guang(程增光), Li Zhong-Jun(李忠军), Wang Zhi-Hua(王志华), and Fang Ying(方英) |
| |
|
Fabrication of suspended graphene devices and their electronic properties |
| |
|
|
Chin. Phys. B
2010 Vol.19 (9): 97307-097307
[Abstract]
(1772)
[HTML 1 KB]
[PDF 1469 KB]
(1905)
|
|
|
57302 |
Hu Ai-Bin(胡爱斌) and Xu Qiu-Xia(徐秋霞) |
| |
|
Comparative studies of Ge and Si p-channel metal－oxide－semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate |
| |
|
|
Chin. Phys. B
2010 Vol.19 (5): 57302-057302
[Abstract]
(1238)
[HTML 1 KB]
[PDF 1414 KB]
(584)
|
|
|
47301 |
Yang Ling(杨凌), Hu Gui-Zhou(胡贵州), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Quan Si(全思), Yang Li-Yuan(杨丽媛), and Jiang Shou-Gao(姜守高) |
| |
|
Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors |
| |
|
|
Chin. Phys. B
2010 Vol.19 (4): 47301-047301
[Abstract]
(1533)
[HTML 1 KB]
[PDF 409 KB]
(1459)
|
|
|
47204 |
Tang Xiao-Yan(汤晓燕), Zhang Yu-Ming(张玉明), and Zhang Yi-Men(张义门) |
| |
|
Study of a 4H－SiC epitaxial n-channel MOSFET |
| |
|
|
Chin. Phys. B
2010 Vol.19 (4): 47204-047204
[Abstract]
(1414)
[HTML 1 KB]
[PDF 115 KB]
(753)
|
|
|
107305 |
Wang Ze-Gao(王泽高), Chen Yuan-Fu(陈远富), Chen Cao(陈超), Tian Ben-Lang(田本朗), Chu Fu-Tong(褚夫同), Liu Xing-Zhao(刘兴钊), and Li Yan-Rong(李言荣) |
| |
|
Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-$\kappa$ organic dielectric |
| |
|
|
Chin. Phys. B
2010 Vol.19 (10): 107305-107305
[Abstract]
(1359)
[HTML 1 KB]
[PDF 484 KB]
(1556)
|
|
|
18103 |
Tian Xue-Yan(田雪雁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Yuan Guang-Cai(袁广才),Li Jing(李婧), Sun Qin-Jun(孙钦军),Wang Yun(王赟), and Xu Xu-Rong(徐叙瑢) |
| |
|
Thickness dependence of surface morphology and charge carrier mobility in organic field-effect transistors |
| |
|
|
Chin. Phys. B
2010 Vol.19 (1): 18103-018103
[Abstract]
(1419)
[HTML 0 KB]
[PDF 5000 KB]
(897)
|
|
|
3639 |
Zhang Hai-Feng(张海峰), Small Michael, Fu Xin-Chu(傅新楚), and Wang Bing-Hong(汪秉宏) |
| |
|
Dynamical behaviour of an epidemic on complex networks with population mobility |
| |
|
|
Chin. Phys. B
2009 Vol.18 (9): 3639-3646
[Abstract]
(1639)
[HTML 1 KB]
[PDF 244 KB]
(810)
|
|
|
3568 |
Tian Xue-Yan(田雪雁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Yuan Guang-Cai(袁广才), and Xu Xu-Rong(徐叙瑢) |
| |
|
Effects of concentration and annealing on the performance of regioregular poly(3-hexylthiophene) field-effect transistors |
| |
|
|
Chin. Phys. B
2009 Vol.18 (8): 3568-3572
[Abstract]
(1212)
[HTML 1 KB]
[PDF 1344 KB]
(639)
|
|
|
2912 |
Fan Long(范隆), Hao Yue(郝跃), Zhao Yuan-Fu(赵元富), Zhang Jin-Cheng(张进城), Gao Zhi-Yuan(高志远), and Li Pei-Xian(李培咸) |
| |
|
Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs) |
| |
|
|
Chin. Phys. B
2009 Vol.18 (7): 2912-2919
[Abstract]
(1432)
[HTML 1 KB]
[PDF 275 KB]
(827)
|
|
|
1601 |
Gu Wen-Ping(谷文萍), Duan Huan-Tao(段焕涛), Ni Jin-Yu(倪金玉), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), and Ma Xiao-Hua(马晓华) |
| |
|
High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors |
| |
|
|
Chin. Phys. B
2009 Vol.18 (4): 1601-1608
[Abstract]
(1637)
[HTML 1 KB]
[PDF 1865 KB]
(1038)
|
|
|
5078 |
Tian Xue-Yan(田雪雁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Xu Xu-Rong(徐叙瑢), Yuan Guang-Cai(袁广才), Li Jing(李婧), Sun Qin-Jun(孙钦军), and Wang Ying(王赟) |
| |
|
Vacuum relaxation and annealing-induced enhancement of mobility of regioregular poly(3-hexylthiophene) field-effect transistors |
| |
|
|
Chin. Phys. B
2009 Vol.18 (11): 5078-5083
[Abstract]
(1384)
[HTML 1 KB]
[PDF 3151 KB]
(535)
|
|
|
4707 |
Song Wen-Guang(宋文广) and Tong Pei-Qing(童培庆) |
| |
|
Fidelity of an electron in one-dimensional determined potentials |
| |
|
|
Chin. Phys. B
2009 Vol.18 (11): 4707-4710
[Abstract]
(1556)
[HTML 1 KB]
[PDF 139 KB]
(572)
|
|
|
2689 |
Zhang Jin-Feng(张金风), Mao Wei(毛维), Zhang Jin-Cheng(张进城), and Hao Yue(郝跃) |
| |
|
The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures |
| |
|
|
Chin. Phys. B
2008 Vol.17 (7): 2689-2695
[Abstract]
(1656)
[HTML 0 KB]
[PDF 743 KB]
(1263)
|
|
|
1360 |
Li Xin-Hua(李新化), Zhong Fei(钟飞), Qiu Kai(邱凯), Yin Zhi-Jun(尹志军), and Ji Chang-Jian(姬长建) |
| |
|
Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy |
| |
|
|
Chin. Phys. B
2008 Vol.17 (4): 1360-1363
[Abstract]
(1444)
[HTML 1 KB]
[PDF 1392 KB]
(683)
|
|
|
1119 |
Gao Hong-Ling(高宏玲), Zeng Yi-Ping(曾一平), Wang Bao-Qiang(王宝强), Zhu Zhan-Ping(朱战平), and Wang Zhan-Guo(王占国) |
| |
|
Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/ In0.53GaAs metamorphic high electron mobility transistor grown by olecular beam epitaxy |
| |
|
|
Chin. Phys. B
2008 Vol.17 (3): 1119-1123
[Abstract]
(1495)
[HTML 1 KB]
[PDF 380 KB]
(761)
|
|
|
4606 |
Bai Xian-Ping (白鲜萍), Ban Shi-Liang (班士良) |
| |
|
Hydrostatic pressure effect on the electron mobility in a ZnSe/Zn1-xCdx Se strained heterojunction |
| |
|
|
Chin. Phys. B
2008 Vol.17 (12): 4606-4613
[Abstract]
(1524)
[HTML 1 KB]
[PDF 412 KB]
(643)
|
|
|
1145 |
Lü Wen(吕文), Peng Jun-Biao(彭俊彪), Yang Kai-Xia(杨开霞), Lan Lin-Feng(兰林峰), Niu Qiao-Li(牛巧利), and Cao Yong(曹镛) |
| |
|
Polymer thin-film transistor based on a high dielectric constant gate insulator |
| |
|
|
Chin. Phys. B
2007 Vol.16 (4): 1145-1149
[Abstract]
(1359)
[HTML 0 KB]
[PDF 866 KB]
(627)
|
|
|
3766 |
Hao Guo-Dong(郝国栋), Ban Shi-Liang(班士良), and Jia Xiu-Min(贾秀敏) |
| |
|
Pressure effect on the electron mobility in AlAs/GaAs quantum wells |
| |
|
|
Chin. Phys. B
2007 Vol.16 (12): 3766-3771
[Abstract]
(1471)
[HTML 0 KB]
[PDF 230 KB]
(574)
|
|
|
3566 |
Guan Jian-Yue(关剑月), Wu Zhi-Xi(吴枝喜), and Wang Ying-Hai(汪映海) |
| |
|
Evolutionary snowdrift game with disordered environments in mobile societies |
| |
|
|
Chin. Phys. B
2007 Vol.16 (12): 3566-3570
[Abstract]
(1563)
[HTML 1 KB]
[PDF 328 KB]
(790)
|
|
|
2735 |
Li Dong-Lin(李东临) and Zeng Yi-Ping(曾一平） |
| |
|
Self-consistent analysis of double-$\delta$-doped InAlAs/InGaAs/InP HEMTs |
| |
|
|
Chin. Phys. B
2006 Vol.15 (11): 2735-2741
[Abstract]
(1491)
[HTML 1 KB]
[PDF 163 KB]
(693)
|
|
|
2422 |
Ma Long(马龙), Huang Ying-Long(黄应龙), Zhang Yang(张杨), Yang Fu-Hua(杨富华), and Wang Liang-Chen(王良臣) |
| |
|
A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor |
| |
|
|
Chin. Phys. B
2006 Vol.15 (10): 2422-2426
[Abstract]
(1664)
[HTML 1 KB]
[PDF 408 KB]
(521)
|
|
|
213 |
Lei Qing-Song (雷青松), Wu Zhi-Meng (吴志猛), Geng Xin-Hua (耿新华), Zhao Ying (赵颖), Sun Jian (孙健), Xi Jian-Ping (奚建平) |
| |
|
Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films |
| |
|
|
Chin. Phys. B
2006 Vol.15 (1): 213-218
[Abstract]
(1171)
[HTML 1 KB]
[PDF 273 KB]
(533)
|
|
|
1100 |
Lü Hong-Liang (吕红亮), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) |
| |
|
Analytical model of electron transport characteristics for 4H-SiC material and devices |
| |
|
|
Chin. Phys. B
2004 Vol.13 (7): 1100-1103
[Abstract]
(1050)
[HTML 0 KB]
[PDF 206 KB]
(429)
|
|
|
748 |
Shi Jian-jun (石建军), Huang Shao-yun (黄少云), Chen Kun-ji (陈坤基), Huang Xin-fan (黄信凡), Xu Jun (徐骏) |
| |
|
TRANSPORT PROPERTIES OF $\mu$c-Si:H FILMS PREPARED BY VERY HIGH HYDROGEN-DILUTED SILANE PLASMA |
| |
|
|
Chin. Phys. B
2001 Vol.10 (8): 748-750
[Abstract]
(914)
[HTML 1 KB]
[PDF 111 KB]
(464)
|
|
