Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well

doi:10.1088/1674-1056/21/10/107305

Abstract We theoretically study the influence of spacer layer thickness fluctuation (SLTF) on the mobility of a two-dimensional electron gas (2DEG) in the modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well. The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained. The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.

Keywords: spacer layer thickness fluctuation scattering interface roughness scattering 2DEG mobility

Received: 10 February 2012
Revised: 19 March 2012
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.21.Fg	(Quantum wells)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976008, 61006004, 61076001, and 10979507), the National Basic Research Program of China (Grant No. A000091109-05), and the National High Technology Research and Development Program of China (Grant No. 2011AA03A101).

Corresponding Authors: Gu Cheng-Yan, Zhu Qin-Sheng
E-mail: 85020624gl@163.com; qszhu@semi.ac.cn

Cite this article:

Gu Cheng-Yan (谷承艳), Liu Gui-Peng (刘贵鹏), Shi Kai (时凯), Song Ya-Feng (宋亚峰), Li Cheng-Ming (李成明), Liu Xiang-Lin (刘祥林), Yang Shao-Yan (杨少延), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国) Spacer layer thickness fluctuation scattering in a modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well 2012 Chin. Phys. B 21 107305

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Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well

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Spacer layer thickness fluctuation scattering in a modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well