Influence of a two-dimensional electron gas on current–voltage characteristics of Al0.3Ga0.7 N/GaN high electron mobility transistors

doi:10.1088/1674-1056/21/6/067201

Abstract The J-V characteristics of Al_tGa_1-tN/GaN high electron mobility transistors (HEMTs) are investigated and simulated using the self-consistent solution of the Schrödinger and Poisson equations for a two-dimensional electron gas (2DEG) in a triangular potential well with the Al mole fraction t=0.3 as an example. Using a simple analytical model, the electronic drift velocity in a 2DEG channel is obtained. It is found that the current density through the 2DEG channel is on the order of 10¹³ A/m² within a very narrow region (about 5 nm). For a current density of 7 $\times$ 10¹³ A/m² passing through the 2DEG channel with a 2DEG density of above 1.2 $\times$ 10¹⁷ m^-2 under a drain voltage V_ds=1.5 V at room temperature, the barrier thickness L_b should be more than 10 nm and the gate bias must be higher than 2 V.

Keywords: two-dimensional electron gas high electron mobility transistor heterointerface nitride semiconductor

Received: 03 August 2011
Revised: 28 November 2011
Accepted manuscript online:

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	73.40.-c	(Electronic transport in interface structures)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60976070) and the Excellent Science and Technology Innovation Program from Beijing Jiaotong University, China.

Corresponding Authors: Lü Yan-Wu
E-mail: ywlu@bjtu.edu.cn

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Ji Dong(冀东), Liu Bing(刘冰), Lu Yan-Wu(吕燕伍), Zou Miao(邹杪), and Fan Bo-Ling(范博龄) Influence of a two-dimensional electron gas on current–voltage characteristics of Al_0.3Ga_0.7 N/GaN high electron mobility transistors 2012 Chin. Phys. B 21 067201

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Influence of a two-dimensional electron gas on current–voltage characteristics of Al0.3Ga0.7 N/GaN high electron mobility transistors

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Influence of a two-dimensional electron gas on current–voltage characteristics of Al_0.3Ga_0.7 N/GaN high electron mobility transistors