Abstract With a memory function approach, this paper investigates the electronic mobility parallel to the interface in a ZnSe/Zn1－xCdx Se strained heterojunction under hydrostatic pressure by considering the intersubband and intrasubband scattering from the optical phonon modes. A triangular potential approximation is adopted to simplify the potential of the conduction band bending in the channel side and the electronic penetrating into the barrier is considered by a finite interface potential in the adopted model. The numerical results with and without strain effect are compared and analyzed. Meanwhile, the properties of electronic mobility under pressure versus temperature, Cd concentration and electronic density are also given and discussed, respectively. It shows that the strain effect lowers the mobility of electrons while the hydrostatic pressure effect is more obvious to decrease the mobility. The contribution induced by the longitudinal optical phonons in the channel side is dominant to decide the mobility. Compared with the intrasubband scattering it finds that the effect of intersubband scattering is also important for the studied material.
Received: 12 May 2008
Revised: 21 May 2008
Accepted manuscript online:
PACS:
73.50.Dn
(Low-field transport and mobility; piezoresistance)
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
Fund: Project
supported by the National Natural Science Foundation (Grant No
60566002) and the Specialized Research Fund for the Doctoral Program
of Higher Education (Grant No 20070126001) of China.
Cite this article:
Bai Xian-Ping (白鲜萍), Ban Shi-Liang (班士良) Hydrostatic pressure effect on the electron mobility in a ZnSe/Zn1-xCdx Se strained heterojunction 2008 Chin. Phys. B 17 4606
[1]
Strain compensated type II superlattices grown by molecular beam epitaxy Chao Ning(宁超), Tian Yu(于天), Rui-Xuan Sun(孙瑞轩), Shu-Man Liu(刘舒曼), Xiao-Ling Ye(叶小玲), Ning Zhuo(卓宁), Li-Jun Wang(王利军), Jun-Qi Liu(刘俊岐), Jin-Chuan Zhang(张锦川), Shen-Qiang Zhai(翟慎强), and Feng-Qi Liu(刘峰奇). Chin. Phys. B, 2023, 32(4): 046802.
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