Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

doi:10.1088/1674-1056/24/10/105201

Abstract An AlGaN/GaN high electron mobility transistor (HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency (RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage V_g, the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector.

Keywords: radio-frequency circuit high electron mobility transistor

Received: 10 March 2015
Revised: 17 May 2015
Accepted manuscript online:

PACS:	52.70.Gw	(Radio-frequency and microwave measurements)
	85.30.-z	(Semiconductor devices)
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61107093), the Suzhou Science and Technology Project, China (Grant No. ZXG2012024), and the Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. 2012243).

Corresponding Authors: Zhang Xiao-Yu, Qin Hua
E-mail: xyzhang2010@sinano.ac.cn;hqin2007@sinano.ac.cn

Cite this article:

Zhang Xiao-Yu (张晓渝), Tan Ren-Bing (谭仁兵), Sun Jian-Dong (孙建东), Li Xin-Xing (李欣幸), Zhou Yu (周宇), Lü Li (吕利), Qin Hua (秦华) Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor 2015 Chin. Phys. B 24 105201

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Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

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