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Integration of a field-effect-transistor terahertz detector with a diagonal horn antenna |
| Xiang Li(李想)1,2, Jian-dong Sun(孙建东)2, Zhi-peng Zhang(张志鹏)2, V V Popov3, Hua Qin(秦华)2 |
1 School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China;
2 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
3 Kotelnikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences, Saratov 410019, Russia |
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Abstract Efficient coupling of terahertz electromagnetic wave with the active region in a terahertz detector is required to enhance the optical sensitivity. In this work, we demonstrate direct integration of a field-effect-transistor (FET) terahertz detector chip at the waveguide port of a horn antenna. Although the integration without a proper backshot is rather preliminary, the noise-equivalent power is greatly reduced from 2.7 nW/Hz1/2 for the bare detector chip to 76 pW/Hz1/2 at 340 GHz. The enhancement factor of about 30 is confirmed by simulations revealing the effective increase in the energy flux density seen by the detector. The simulation further confirms the frequency response of the horn antenna and the on-chip antennas. A design with the detector chip fully embedded within a waveguide cavity could be made to further enhance the coupling efficiency.
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Received: 25 December 2017
Revised: 08 March 2018
Accepted manuscript online:
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PACS:
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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72.80.Ey
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(III-V and II-VI semiconductors)
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42.82.Et
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(Waveguides, couplers, and arrays)
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87.50.U-
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| Fund: Project supported by the National Key Research and Development Program of China (Grant Nos.2016YFF0100501 and 2016YFC0801203),the National Natural Science Foundation of China (Grant Nos.61611530708,11403084,61401456,61401297,and 61505242),the Six Talent Peaks Project of Jiangsu Province,China (Grant No.XXRJ-079),the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No.2017372),and the Russian Foundation for Basic Research (Grant No.17-52-53063). |
Corresponding Authors:
Jian-dong Sun, Hua Qin
E-mail: jdsun2008@sinano.ac.cn;hqin2007@sinano.ac.cn
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Cite this article:
Xiang Li(李想), Jian-dong Sun(孙建东), Zhi-peng Zhang(张志鹏), V V Popov, Hua Qin(秦华) Integration of a field-effect-transistor terahertz detector with a diagonal horn antenna 2018 Chin. Phys. B 27 068506
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