Fabrication of suspended graphene devices and their electronic properties

doi:10.1088/1674-1056/19/9/097307

Abstract Suspended graphene devices are successfully fabricated by using a novel PMMA/MMA/PMMA tri-layer resist technique. The gap between graphene and dielectric substrate can be easily controlled by the thickness of the bottom PMMA layer, and no wet-etching with hazardous hydrofluoric acid is involved in our fabrication process. Electrical characterizations on suspended graphene devices are performed in vacuum when in-situ current annealing directly leads to a significant improvement on transport properties of graphene, i.e., the increase of carrier mobility with the reduction of width of Dirac peak. Our results make a new opportunity to study intrinsic properties of graphene.

Keywords: graphene transport suspension high mobility

Received: 05 April 2010
Revised: 04 May 2010
Accepted manuscript online:

PACS:	7340T
	7360F
	7360J

Fund: Project supported by the Special Presidential Foundation of the Chinese Academy of Sciences, China (Grant No. 08172911ZX), the National Basic Research Program of China (Grant No. 2009CB930200), and the National Natural Science Foundation of China (Grant No. 20973045).

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Li Qiang(李强), Cheng Zeng-Guang(程增光), Li Zhong-Jun(李忠军), Wang Zhi-Hua(王志华), and Fang Ying(方英) Fabrication of suspended graphene devices and their electronic properties 2010 Chin. Phys. B 19 097307

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Fabrication of suspended graphene devices and their electronic properties

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