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Chinese Physics, 2004, Vol. 13(7): 1100-1103    DOI: 10.1088/1009-1963/13/7/023
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Analytical model of electron transport characteristics for 4H-SiC material and devices

Lü Hong-Liang (吕红亮), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明)
Microelectronics Institute, Xidian University, Xi'an 710071, China
Abstract  Based on 4H-SiC material parameters, three different analytical expressions are used to characterize the electron mobility as the function of electric field. The first model is based on simple saturation of the steady-state drift velocity with electric field (conventional three-parameter model for silicon). The second GaAs-based mobility model partially reflects the peak velocity in high electric fields. The third multi-parameter model proposed in this paper is more realistic since it well reproduces the drift velocity-field characteristics obtained by Monte Carlo calculations, revealing the peak drift velocity with subsequent saturation at higher electric fields. Thus, the drift velocity model presented in this paper is much better for device simulation. In this paper, the influence of mobility model on DC characteristics of 4H-SiC MESFET is calculated and the better accordance with the experimental results is presented with multi-parameter model.
Keywords:  SiC      mobility      velocity-field characteristics      MESFET  
Received:  08 October 2003      Revised:  26 December 2003      Accepted manuscript online: 
PACS:  72.80.Jc (Other crystalline inorganic semiconductors)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  72.20.Fr (Low-field transport and mobility; piezoresistance)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Key Basic Research Special Foundation of China (Grant No 2002CB311904) and by the National Defence Pre-research Foundation of China (Grant No 41308060107).

Cite this article: 

Lü Hong-Liang (吕红亮), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) Analytical model of electron transport characteristics for 4H-SiC material and devices 2004 Chinese Physics 13 1100

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