Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors

doi:10.1088/1674-1056/21/10/108504

Abstract An optimized micro-gated terahertz detector with novel triple resonant antenna is presented. The novel resonant antenna operates at room temperature and shows more than a 700% increase in photocurrent response compared to the conventional bowtie antenna. In finite-difference-time-domain simulations, we found the performance of the self-mixing GaN/AlGaN high electron mobility transistor detector is mainly dependent on the parameters L_gs (the gap between the gate and the source/drain antenna) and L_w (the gap between the source and drain antenna). With the improved triple resonant antenna, an optimized micrometer-sized AlGaN/GaN high electron mobility transistor detector can achieve a high responsivity of 9.45×10² V/W at a frequency of 903 GHz at room temperature.

Keywords: terahertz detector triple resonant antenna two-dimensional electron gas high electron mobility transistor

Received: 09 February 2012
Revised: 01 March 2012
Accepted manuscript online:

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	72.80.Ey	(III-V and II-VI semiconductors)
	85.35.Be	(Quantum well devices (quantum dots, quantum wires, etc.))
	84.40.Fe	(Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.))

Fund: Project supported by the National Basic Research Program of China (Grant No. G2009CB929303), the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. Y0BAQ31001), the National Natural Science Foundation of China (Grant Nos. 60871077 and 61107093), and the Visiting Professorship for Senior International Scientists of the Chinese Academy of Sciences (Grant No. 2010T2J07).

Corresponding Authors: Wu Dong-Min
E-mail: dmwu2008@sinano.ac.cn

Cite this article:

Sun Yun-Fei (孙云飞), Sun Jan-Dong (孙建东), Zhang Xiao-Yu (张晓渝), Qin Hua (秦华), Zhang Bao-Shun (张宝顺), Wu Dong-Min (吴东岷) Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors 2012 Chin. Phys. B 21 108504

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Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors

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