Performance of La2O3/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors

doi:10.1088/1674-1056/21/6/067305

Abstract We report on the performance of La₂O₃/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) and InAlN/GaN high electron mobility transistors (HEMTs). The MOSHEMT presents a maximum drain current of 961 mA/mm at V_gs=4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at V_gs=1 V and 131 mS/mm for the HEMT device, while the gate leakage current in the reverse direction could be reduced by four orders of magnitude. Compared with the HEMT device of a similar geometry, MOSHEMT presents a large gate voltage swing and negligible current collapse.

Keywords: indium aluminum nitride metal-oxide-semiconductor high electron mobility transistor lanthanum oxide

Received: 05 August 2011
Revised: 15 December 2011
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.61.Ey	(III-V semiconductors)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the Basic Science Research Fund for the Central Universities (Grant No. K50511250009).

Corresponding Authors: Feng Qian
E-mail: qfeng@mail.xidian.edu.cn

Cite this article:

Feng Qian(冯倩), Li Qian(李倩), Xing Tao(邢韬) Wang Qiang(王强), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) Performance of La₂O₃/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors 2012 Chin. Phys. B 21 067305

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Performance of La2O3/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors

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Performance of La₂O₃/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors