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Other articles related with "heterojunction"：
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27502 |
Bingyu Che(车冰玉), Guojing Hu(胡国静), Chao Zhu(朱超), Hui Guo(郭辉), Senhao Lv(吕森浩), Xuanye Liu(刘轩冶), Kang Wu(吴康), Zhen Zhao(赵振), Lulu Pan(潘禄禄), Ke Zhu(祝轲), Qi Qi(齐琦), Yechao Han(韩烨超), Xiao Lin(林晓), Zi'an Li(李子安), Chengmin Shen(申承民), Lihong Bao(鲍丽宏), Zheng Liu(刘政), Jiadong Zhou(周家东), Haitao Yang(杨海涛), and Hong-Jun Gao(高鸿钧) |
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Magnetic proximity effect in the two-dimensional ε-Fe2O3/NbSe2 heterojunction |
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Chin. Phys. B
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16104 |
Ya-Hui Feng(冯亚辉), Hong-Xia Guo(郭红霞), Yi-Wei Liu(刘益维), Xiao-Ping Ouyang(欧阳晓平), Jin-Xin Zhang(张晋新), Wu-Ying Ma(马武英), Feng-Qi Zhang(张凤祁), Ru-Xue Bai(白如雪), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
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Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect |
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Chin. Phys. B
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118503 |
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A fast-response self-powered UV-Vis-NIR broadband photodetector based on a AgIn5Se8/t-Se heterojunction |
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Chin. Phys. B
2023 Vol.32 (11): 118503-118503
[Abstract]
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116701 |
Xue-Qin Cao(曹雪芹), Yuan-Yuan Huang(黄媛媛), Ya-Yan Xi(席亚妍), Zhen Lei(雷珍), Jing Wang(王静), Hao-Nan Liu(刘昊楠), Ming-Jian Shi(史明坚), Tao-Tao Han(韩涛涛), Meng-En Zhang(张蒙恩), and Xin-Long Xu(徐新龙) |
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Interfacial photoconductivity effect of type-I and type-II Sb2Se3/Si heterojunctions for THz wave modulation |
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Chin. Phys. B
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108506 |
Yunhe Guan(关云鹤), Huan Li(黎欢), Haifeng Chen(陈海峰), and Siwei Huang(黄思伟) |
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An accurate analytical surface potential model of heterojunction tunnel FET |
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Chin. Phys. B
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107310 |
Pranav Agarwal, Sankalp Rai, Rakshit Y. A, and Varun Mishra |
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Design and investigation of doping-less gate-all-around TFET with Mg2Si source material for low power and enhanced performance applications |
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Chin. Phys. B
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98503 |
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Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications |
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Chin. Phys. B
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98502 |
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NiO/β-Ga2O3 heterojunction diodes with ultra-low leakage current below 10-10 A and high thermostability |
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Chin. Phys. B
2023 Vol.32 (9): 98502-098502
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97301 |
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Design optimization of a silicon-germanium heterojunction negative capacitance gate-all-around tunneling field effect transistor based on a simulation study |
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Chin. Phys. B
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66105 |
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Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation |
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Chin. Phys. B
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58504 |
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A SiC asymmetric cell trench MOSFET with a split gate and integrated p+-poly Si/SiC heterojunction freewheeling diode |
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Chin. Phys. B
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47301 |
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A self-powered ultraviolet photodetector based on a Ga2O3/Bi2WO6 heterojunction with low noise and stable photoresponse |
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Chin. Phys. B
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37401 |
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Abnormal magnetoresistance effect in the Nb/Si superconductor-semiconductor heterojunction |
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Chin. Phys. B
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37302 |
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Design and research of normally-off β-Ga2O3/4H-SiC heterojunction field effect transistor |
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Chin. Phys. B
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27504 |
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Charge-mediated voltage modulation of magnetism in Hf0.5Zr0.5O2/Co multiferroic heterojunction |
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Chin. Phys. B
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28801 |
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Micro-mechanism study of the effect of Cd-free buffer layers ZnXO (X=Mg/Sn) on the performance of flexible Cu2ZnSn(S, Se)4 solar cell |
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Chin. Phys. B
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20701 |
Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华) |
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Achieving highly-efficient H2S gas sensor by flower-like SnO2-SnO/porous GaN heterojunction |
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Chin. Phys. B
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High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack |
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Chin. Phys. B
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117701 |
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Skyrmion transport driven by pure voltage generated strain gradient |
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Chin. Phys. B
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98401 |
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Sub-stochiometric MoOx by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells |
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Chin. Phys. B
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87101 |
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Modulation of Schottky barrier in XSi2N4/graphene (X=Mo and W) heterojunctions by biaxial strain |
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Chin. Phys. B
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86106 |
Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚) |
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Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors |
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Chin. Phys. B
2022 Vol.31 (8): 86106-086106
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68502 |
Yanzhe Wang(王彦喆), Wuchang Ding(丁武昌), Yongbo Su(苏永波), Feng Yang(杨枫),Jianjun Ding(丁建君), Fugui Zhou(周福贵), and Zhi Jin(金智) |
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An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors |
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Chin. Phys. B
2022 Vol.31 (6): 68502-068502
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38501 |
Haiting Yao(姚海婷), Xin Guo(郭鑫), Aida Bao(鲍爱达), Haiyang Mao(毛海央),Youchun Ma(马游春), and Xuechao Li(李学超) |
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Graphene-based heterojunction for enhanced photodetectors |
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Chin. Phys. B
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Wei-Ming Sun(孙伟铭), Bing-Yang Sun(孙兵阳), Shan Li(李山), Guo-Liang Ma(麻国梁), Ang Gao(高昂), Wei-Yu Jiang(江为宇), Mao-Lin Zhang(张茂林), Pei-Gang Li(李培刚), Zeng Liu(刘增), and Wei-Hua Tang(唐为华) |
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A broadband self-powered UV photodetector of a β-Ga2O3/γ-CuI p-n junction |
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Chin. Phys. B
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28101 |
Zhao Wang(王昭), Shu-Xing Fan(范树兴), and Wei Tang(唐伟) |
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SnO2/Co3O4 nanofibers using double jets electrospinning as low operating temperature gas sensor |
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Chin. Phys. B
2022 Vol.31 (2): 28101-028101
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18504 |
Sheng-Long Ran(冉胜龙), Zhi-Yong Huang(黄智勇), Sheng-Dong Hu(胡盛东), Han Yang(杨晗), Jie Jiang(江洁), and Du Zhou(周读) |
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A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode |
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Chin. Phys. B
2022 Vol.31 (1): 18504-018504
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127502 |
Lei Shen(沈磊), Guanjie Wu(武冠杰), Tao Sun(孙韬), Zhi Meng(孟智), Chun Zhou(周春), Wenyi Liu(刘文怡), Kang Qiu(邱康), Zongwei Ma(马宗伟), Haoliang Huang(黄浩亮), Yalin Lu(陆亚林), Zongzhi Zhang(张宗芝), and Zhigao Sheng(盛志高) |
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Magnetic anisotropy manipulation and interfacial coupling in Sm3Fe5O12 films and CoFe/Sm3Fe5O12 heterostructures |
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Chin. Phys. B
2021 Vol.30 (12): 127502-127502
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114211 |
Xia Wang(王霞), Wei-Fang Gu(古卫芳), Yong-Feng Qiao(乔永凤), Zhi-Yong Feng(冯志永), Yue-Hua An(安跃华), Shao-Hui Zhang(张少辉), and Zeng Liu(刘增) |
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Band offsets and electronic properties of the Ga2O3/FTO heterojunction via transfer of free-standing Ga2O3 onto FTO/glass |
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Chin. Phys. B
2021 Vol.30 (11): 114211-114211
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77304 |
Yancai Xu(徐彦彩), Rong Zhou(周荣), Qin Yin(尹钦), Jiao Li(李娇), Guoxiang Si(佀国翔), and Hongbin Zhang(张洪宾) |
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High-performance self-powered photodetector based on organic/inorganic hybrid van der Waals heterojunction of rubrene/silicon |
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Chin. Phys. B
2021 Vol.30 (7): 77304-077304
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48503 |
Baoxing Duan(段宝兴), Xin Huang(黄鑫), Haitao Song (宋海涛), Yandong Wang(王彦东), and Yintang Yang(杨银堂) |
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Novel Si/SiC heterojunction lateral double-diffused metal-oxide semiconductor field-effect transistor with p-type buried layer breaking silicon limit |
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Chin. Phys. B
2021 Vol.30 (4): 48503-
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26101 |
Yong Li(李勇), Peng-Fei Ji(姬鹏飞), Yue-Li Song(宋月丽), Feng-Qun Zhou(周丰群), Hong-Chun Huang(黄宏春), and Shu-Qing Yuan(袁书卿) |
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CdS/Si nanofilm heterojunctions based on amorphous silicon films: Fabrication, structures, and electrical properties |
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Chin. Phys. B
2021 Vol.30 (2): 26101-0
[Abstract]
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128801 |
Quan-Zhen Sun(孙全震), Hong-Jie Jia(贾宏杰), Shu-Ying Cheng(程树英), Hui Deng(邓辉)\ccclink, Qiong Yan(严琼), Bi-Wen Duan(段碧雯), Cai-Xia Zhang(张彩霞), Qiao Zheng(郑巧), Zhi-Yuan Yang(杨志远), Yan-Hong Luo(罗艳红), Qing-Bo Men(孟庆波), and Shu-Juan Huang(黄淑娟) |
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A 9% efficiency of flexible Mo-foil-based Cu2ZnSn(S, Se)4 solar cells by improving CdS buffer layer and heterojunction interface |
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Chin. Phys. B
2020 Vol.29 (12): 128801-
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48801 |
Cao-Yu Long(龙操玉), Ning Wang(王宁), Ke-Qing Huang(黄可卿), Heng-Yue Li(李恒月), Biao Liu(刘标), Jun-Liang Yang(阳军亮) |
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Two-step processed efficient perovskite solar cells via improving perovskite/PTAA interface using solvent engineering in PbI2 precursor |
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Chin. Phys. B
2020 Vol.29 (4): 48801-048801
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38801 |
Jun-Fan Chen(陈俊帆), Sheng-Sheng Zhao(赵生盛), Ling-Ling Yan(延玲玲), Hui-Zhi Ren(任慧志), Can Han(韩灿), De-Kun Zhang(张德坤), Chang-Chun Wei(魏长春), Guang-Cai Wang(王广才), Guo-Fu Hou(侯国付), Ying Zhao(赵颖), Xiao-Dan Zhang(张晓丹) |
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Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide (a-SiOx:H) on <100>- and <111>-orientated c-Si wafers |
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Chin. Phys. B
2020 Vol.29 (3): 38801-038801
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28501 |
Xian-Cheng Liu(刘先程), Jia-Jun Ma(马佳俊), Hong-Yun Xie(谢红云), Pei Ma(马佩), Liang Chen(陈亮), Min Guo(郭敏), Wan-Rong Zhang(张万荣) |
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Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor |
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Chin. Phys. B
2020 Vol.29 (2): 28501-028501
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128503 |
Haibin Huang(黄海宾), Lang Zhou(周浪), Jiren Yuan(袁吉仁), Zhijue Quan(全知觉) |
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Simulation of a-Si: H/c-Si heterojunction solar cells: From planar junction to local junction |
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Chin. Phys. B
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126801 |
Jia-Jia Zhao(赵佳佳), Jin-Shuai Zhang(张金帅), Feng Zhang(张锋), Wei Wang(王威), Hai-Rong He(何海蓉), Wang-Yang Cai(蔡汪洋), Jin Wang(王进) |
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Electro-optical dual modulation on resistive switching behavior in BaTiO3/BiFeO3/TiO2 heterojunction |
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Chin. Phys. B
2019 Vol.28 (12): 126801-126801
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98502 |
Rui Chen(陈蕊), Dong-Yue Jin(金冬月), Wan-Rong Zhang(张万荣), Li-Fan Wang(王利凡), Bin Guo(郭斌), Hu Chen(陈虎), Ling-Han Yin(殷凌寒), Xiao-Xue Jia(贾晓雪) |
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Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout |
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Chin. Phys. B
2019 Vol.28 (9): 98502-098502
[Abstract]
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88802 |
Xiang Li(李想), Zhiqun He(何志群), Mengjie Sun(孙盟杰), Huimin Zhang(张慧敏), Zebang Guo(郭泽邦), Yajun Xu(许亚军), Han Li(李瀚), Chunjun Liang(梁春军), Xiping Jing(荆西平) |
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Exploring alkylthiol additives in PBDB-T:ITIC blended active layers for solar cell applications |
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Chin. Phys. B
2019 Vol.28 (8): 88802-088802
[Abstract]
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[HTML 1 KB]
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(228)
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88503 |
Xiao-Fei Ma(马晓菲), Yuan-Qi Huang(黄元琪), Yu-Song Zhi(支钰崧), Xia Wang(王霞), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), Wei-Hua Tang(唐为华) |
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Rectifying characteristics and solar-blind photoresponse in β-Ga2O3/ZnO heterojunctions |
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Chin. Phys. B
2019 Vol.28 (8): 88503-088503
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76106 |
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏), Hong-Xia Guo(郭红霞) |
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Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor |
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Chin. Phys. B
2019 Vol.28 (7): 76106-076106
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78101 |
Xiuqing Meng(孟秀清), Shulin Chen(陈书林), Yunzhang Fang(方允樟), Jianlong Kou(寇建龙) |
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Annealing-enhanced interlayer coupling interaction inGaS/MoS2 heterojunctions |
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Chin. Phys. B
2019 Vol.28 (7): 78101-078101
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17103 |
Jiayue Han(韩嘉悦), Jun Wang(王军) |
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Photodetectors based on two-dimensional materials and organic thin-film heterojunctions |
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Chin. Phys. B
2019 Vol.28 (1): 17103-017103
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17301 |
Mengzhou Liao(廖梦舟), Luojun Du(杜罗军), Tingting Zhang(张婷婷), Lin Gu(谷林), Yugui Yao(姚裕贵), Rong Yang(杨蓉), Dongxia Shi(时东霞), Guangyu Zhang(张广宇) |
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Pressure-mediated contact quality improvement between monolayer MoS2 and graphite |
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Chin. Phys. B
2019 Vol.28 (1): 17301-017301
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78801 |
Shiqi Xiao(肖仕奇), Qingxia Fan(范庆霞), Xiaogang Xia(夏晓刚), Zhuojian Xiao(肖卓建), Huiliang Chen(陈辉亮), Wei Xi(席薇), Penghui Chen(陈鹏辉), Junjie Li(李俊杰), Yanchun Wang(王艳春), Huaping Liu(刘华平), Weiya Zhou(周维亚) |
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Dependence of the solar cell performance on nanocarbon/Si heterojunctions |
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Chin. Phys. B
2018 Vol.27 (7): 78801-078801
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78502 |
Cong Li(李聪), Zhi-Rui Yan(闫志蕊), Yi-Qi Zhuang(庄奕琪), Xiao-Long Zhao(赵小龙), Jia-Min Guo(郭嘉敏) |
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Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric |
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Chin. Phys. B
2018 Vol.27 (7): 78502-078502
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77303 |
Guo-Cai Wang(王国才), Liang-Mei Wu(吴良妹), Jia-Hao Yan(严佳浩), Zhang Zhou(周璋), Rui-Song Ma(马瑞松), Hai-Fang Yang(杨海方), Jun-Jie Li(李俊杰), Chang-Zhi Gu(顾长志), Li-Hong Bao(鲍丽宏), Shi-Xuan Du(杜世萱), Hong-Jun Gao(高鸿钧) |
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Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices |
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Chin. Phys. B
2018 Vol.27 (7): 77303-077303
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38502 |
Haibin Huang(黄海宾), Gangyu Tian(田罡煜), Lang Zhou(周浪), Jiren Yuan(袁吉仁), Wolfgang R. Fahrner, Wenbin Zhang(张闻斌), Xingbing Li(李杏兵), Wenhao Chen(陈文浩), Renzhong Liu(刘仁中) |
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Simulation and experimental study of a novel bifacial structure of silicon heterojunction solar cell for high efficiency and low cost |
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Chin. Phys. B
2018 Vol.27 (3): 38502-038502
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127101 |
Jun-Hui Lei(雷军辉), Xiu-Fen Wang(王秀峰), Jian-Guo Lin(林建国) |
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Tuning electronic properties of the S2/graphene heterojunction by strains from density functional theory |
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Chin. Phys. B
2017 Vol.26 (12): 127101-127101
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[PDF 1950 KB]
(322)
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98502 |
Ya-Bin Sun(孙亚宾), Xiao-Jin Li(李小进), Jin-Zhong Zhang(张金中), Yan-Ling Shi(石艳玲) |
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Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout |
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Chin. Phys. B
2017 Vol.26 (9): 98502-098502
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[PDF 612 KB]
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87309 |
Jie Chen(陈杰), Xue-Min Wang(王雪敏), Ji-Cheng Zhang(张继成), Hong-Bu Yin(尹泓卜), Jian Yu(俞健), Yan Zhao(赵妍), Wei-Dong Wu(吴卫东) |
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Investigation of Zn1-xCdxO films bandgap and Zn1-xCdxO/ZnO heterojunctions band offset by x-ray photoelectron spectroscopy |
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Chin. Phys. B
2017 Vol.26 (8): 87309-087309
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(306)
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77302 |
Hai-Lin Huang(黄海林), Deng-Jing Wang(王登京), Hong-Rui Zhang(张洪瑞), Hui Zhang(张慧), Chang-Min Xiong(熊昌民), Ji-Rong Sun(孙继荣), Bao-Gen Shen(沈保根) |
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Abundant photoelectronic behaviors of La0.67Sr0.33MnO3/Nb: SrTiO3 junctions |
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Chin. Phys. B
2017 Vol.26 (7): 77302-077302
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[PDF 413 KB]
(240)
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68802 |
Zhi Qiao(乔治), Jian-Li Ji(冀建利), Yan-Li Zhang(张彦立), Hu Liu(刘虎), Tong-Kai Li(李同锴) |
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Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells |
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Chin. Phys. B
2017 Vol.26 (6): 68802-068802
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38504 |
Xia Wei(魏侠), Fa-Guang Yan(闫法光), Chao Shen(申超), Quan-Shan Lv(吕全山), Kai-You Wang(王开友) |
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Photodetectors based on junctions of two-dimensional transition metal dichalcogenides |
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Chin. Phys. B
2017 Vol.26 (3): 38504-038504
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[PDF 7098 KB]
(939)
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97202 |
Jun Chen(陈俊), Jiabing Lv(吕加兵) |
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Spectral response modeling and analysis of p-n-p In0.53Ga0.47As/InP HPTs |
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Chin. Phys. B
2016 Vol.25 (9): 97202-097202
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80701 |
Zubair Ahmad, Farid Touati, Shakoor R A, Al-Thani N J |
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Study of a ternary blend system for bulk heterojunction thin film solar cells |
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Chin. Phys. B
2016 Vol.25 (8): 80701-080701
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[PDF 3814 KB]
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58401 |
Ou-Peng Li(李欧鹏), Yong Zhang(张勇), Rui-Min Xu(徐锐敏), Wei Cheng(程伟), Yuan Wang(王元), Bing Niu(牛斌), Hai-Yan Lu(陆海燕) |
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A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology |
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Chin. Phys. B
2016 Vol.25 (5): 58401-058401
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[PDF 633 KB]
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40702 |
Wen-Jun Yan(闫文君), Ming Hu(胡明), Ji-Ran Liang(梁继然), Deng-Feng Wang(王登峰), Yu-Long Wei(魏玉龙), Yu-Xiang Qin(秦玉香) |
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Preparation and room temperature NO2-sensing performances of porous silicon/V2O5 nanorods |
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Chin. Phys. B
2016 Vol.25 (4): 40702-040702
[Abstract]
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[PDF 2226 KB]
(1288)
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117703 |
Gu Jin-Hua (谷锦华), Si Jia-Le (司嘉乐), Wang Jiu-Xiu (王九秀), Feng Ya-Yang (冯亚阳), Gao Xiao-Yong (郜小勇), Lu Jing-Xiao (卢景霄) |
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Indium-tin oxide films obtained by DC magnetron sputtering for improved Si heterojunction solar cell applications |
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Chin. Phys. B
2015 Vol.24 (11): 117703-117703
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[PDF 578 KB]
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116102 |
Khasan S. Karimov, Zubair Ahmad, Farid Touati, M. Mahroof-Tahir, M. Muqeet Rehman, S. Zameer Abbas |
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Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H2Pc heterojunction |
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Chin. Phys. B
2015 Vol.24 (11): 116102-116102
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[PDF 547 KB]
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108501 |
Zhu Jian-Zhuo (朱键卓), Qi Ling-Hui (祁令辉), Du Hui-Jing (杜会静), Chai Ying-Chun (柴莺春) |
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Simulation study of the losses and influences of geminate and bimolecular recombination on the performances of bulk heterojunction organic solar cells |
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Chin. Phys. B
2015 Vol.24 (10): 108501-108501
[Abstract]
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[PDF 1300 KB]
(392)
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107304 |
Wang Xiao-Bo (王小波), Li Yong (李勇), Yan Ling-Ling (闫玲玲), Li Xin-Jian (李新建) |
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Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array |
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Chin. Phys. B
2015 Vol.24 (10): 107304-107304
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[PDF 421 KB]
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107102 |
Ma Jun-Jie (马俊杰), Wang Deng-Jing (王登京), Huang Hai-Lin (黄海林), Wang Ru-Wu (汪汝武), Li Yun-Bao (李云宝) |
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Nano LaAlO3 buffer layer-assisted tunneling current in manganite p-n heterojunction |
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Chin. Phys. B
2015 Vol.24 (10): 107102-107102
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[PDF 371 KB]
(254)
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88502 |
Li Pei (李培), Guo Hong-Xia (郭红霞), Guo Qi (郭旗), Zhang Jin-Xin (张晋新), Xiao Yao (肖尧), Wei Ying (魏莹), Cui Jiang-Wei (崔江维), Wen Lin (文林), Liu Mo-Han (刘默寒), Wang Xin (王信) |
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Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment |
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Chin. Phys. B
2015 Vol.24 (8): 88502-088502
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[HTML 1 KB]
[PDF 1147 KB]
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116104 |
Sun Ya-Bin (孙亚宾), Fu Jun (付军), Xu Jun (许军), Wang Yu-Dong (王玉东), Zhou Wei (周卫), Zhang Wei (张伟), Cui Jie (崔杰), Li Gao-Qing (李高庆), Liu Zhi-Hong (刘志弘) |
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Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation |
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Chin. Phys. B
2014 Vol.23 (11): 116104-116104
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(404)
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114402 |
Fu Qiang (付强), Zhang Wan-Rong (张万荣), Jin Dong-Yue (金冬月), Ding Chun-Bao (丁春宝), Zhao Yan-Xiao (赵彦晓), Lu Dong (鲁东) |
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Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT |
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Chin. Phys. B
2014 Vol.23 (11): 114402-114402
[Abstract]
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[PDF 1131 KB]
(425)
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107302 |
Saeideh Ramezani Sani |
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Analysis of optoelectronic properties of TiO2 nanowiers/Si heterojunction arrays |
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Chin. Phys. B
2014 Vol.23 (10): 107302-107302
[Abstract]
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[HTML 1 KB]
[PDF 242 KB]
(469)
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87307 |
Li Yong (李勇), Wang Ling-Li (王伶俐), Wang Xiao-Bo (王小波), Yan Ling-Ling (闫玲玲), Su Li-Xia (苏丽霞), Tian Yong-Tao (田永涛), Li Xin-Jian (李新建) |
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Forward and reverse electron transport properties across a CdS/Si multi-interface nanoheterojunction |
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Chin. Phys. B
2014 Vol.23 (8): 87307-087307
[Abstract]
(620)
[HTML 1 KB]
[PDF 689 KB]
(416)
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66801 |
Feng Zhen-Yu (冯振宇), Ban Shi-Liang (班士良), Zhu Jun (朱俊) |
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Binding energies of impurity states in strained wurtzite GaN/AlxGa1-xN heterojunctions with finitely thick potential barriers |
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Chin. Phys. B
2014 Vol.23 (6): 66801-066801
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[PDF 292 KB]
(412)
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57202 |
Wang Deng-Jing (王登京), Ma Jun-Jie (马俊杰), Wang Mei (王妹), Wang Ru-Wu (汪汝武), Li Yun-Bao (李云宝) |
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Effect of charge order transition on tunneling resistance in Pr0.6Ca0.4MnO3/Nb-doped SrTiO3 heterojunction |
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Chin. Phys. B
2014 Vol.23 (5): 57202-057202
[Abstract]
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[HTML 1 KB]
[PDF 378 KB]
(413)
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47301 |
Wang Mei (王妹), Wang Deng-Jing (王登京), Wang Ru-Wu (汪汝武), Li Yun-Bao (李云宝) |
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Direct measurement of the interfacial barrier height of the manganite p-n heterojunction |
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Chin. Phys. B
2014 Vol.23 (4): 47301-047301
[Abstract]
(805)
[HTML 1 KB]
[PDF 228 KB]
(484)
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37302 |
Wen Hui-Juan (温慧娟), Zhang Jin-Cheng (张进成), Lu Xiao-Li (陆小力), Wang Zhi-Zhe (王之哲), Ha Wei (哈微), Ge Sha-Sha (葛莎莎), Cao Rong-Tao (曹荣涛), Hao Yue (郝跃) |
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Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer |
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Chin. Phys. B
2014 Vol.23 (3): 37302-037302
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[PDF 878 KB]
(507)
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17803 |
Bi Wen-Tao (毕文涛), Wu Xiao-Ming (吴晓明), Hua Yu-Lin (华玉林), Sun Jin-E (孙金娥), Xiao Zhi-Hui (肖志慧), Wang Li (王丽), Yin Shou-Gen (印寿根) |
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Tandem white organic light-emitting diodes adopting a C60：rubrene charge generation layer |
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Chin. Phys. B
2014 Vol.23 (1): 17803-017803
[Abstract]
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[PDF 337 KB]
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0 |
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Directly measure the interfacial barrier height of the manganite p-n heterojunction |
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Chin. Phys. B
Vol. (): 0-0
[Abstract]
(10)
[HTML 0 KB]
[PDF 0 KB]
(4)
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128502 |
Zhang Li-Chun (张立春), Zhao Feng-Zhou (赵风周), Wang Fei-Fei (王菲菲), Li Qing-Shan (李清山) |
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Improvement in electroluminescence performance of n-ZnO/Ga2O3/p-GaN heterojunction light-emitting diodes |
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Chin. Phys. B
2013 Vol.22 (12): 128502-128502
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[HTML 1 KB]
[PDF 487 KB]
(1077)
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107301 |
Yan Guo-Ying (闫国英), Bai Zi-Long (白子龙), Li Hui-Ling (李慧玲), Fu Guang-Sheng (傅广生), Liu Fu-Qiang (刘富强), Yu Wei (于威), Wang Jiang-Long (王江龙), Wang Shu-Fang (王淑芳) |
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Temperature-dependent rectifying and photovoltaic characteristics of an oxygen-deficient Bi2Sr2Co2Oy/Si heterojunction |
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Chin. Phys. B
2013 Vol.22 (10): 107301-107301
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[HTML 1 KB]
[PDF 293 KB]
(329)
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100701 |
Zubair Ahmad, Mahdi Hasan Suhail, Issam Ibrahim Muhammad, Wissam Khayer Al-Rawi, Khaulah Sulaiman, Qayyum Zafar, Ahmad Sazali Hamzah, Zurina Shaameri |
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MEH-PPV/Alq3-based bulk heterojunction photodetector |
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Chin. Phys. B
2013 Vol.22 (10): 100701-100701
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[HTML 1 KB]
[PDF 603 KB]
(1887)
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88101 |
Yang Can (杨灿), Wang Xiao-Ping (王小平), Wang Li-Jun (王丽军), Pan Xiu-Fang (潘秀芳), Li Song-Kun (李松坤), Jing Long-Wei (井龙伟) |
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White electroluminescence of n-ZnO：Al/p-diamond heterostructure devices |
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Chin. Phys. B
2013 Vol.22 (8): 88101-088101
[Abstract]
(545)
[HTML 1 KB]
[PDF 5682 KB]
(650)
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56103 |
Sun Ya-Bin (孙亚宾), Fu Jun (付军), Xu Jun (许军), Wang Yu-Dong (王玉东), Zhou Wei (周卫), Zhang Wei (张伟), Cui Jie (崔杰), Li Gao-Qing (李高庆), Liu Zhi-Hong (刘志弘), Yu Yong-Tao (余永涛), Ma Ying-Qi (马英起), Feng Guo-Qiang (封国强), Han Jian-Wei (韩建伟) |
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A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor |
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Chin. Phys. B
2013 Vol.22 (5): 56103-056103
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[HTML 1 KB]
[PDF 595 KB]
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16803 |
Zhang Lei (张磊), Shen Hong-Lie (沈鸿烈), Yue Zhi-Hao (岳之浩), Jiang Feng (江丰), Wu Tian-Ru (吴天如), Pan Yuan-Yuan (潘园园) |
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Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell |
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Chin. Phys. B
2013 Vol.22 (1): 16803-016803
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[HTML 0 KB]
[PDF 339 KB]
(1502)
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118401 |
Zhang Tian-Hui (张天慧), Piao Ling-Yu (朴玲钰), Zhao Su-Ling (赵谡玲), Xu Zheng (徐征), Wu Qian (吴谦), Kong Chao (孔超 ) |
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Application of TiO2 with different structures in solar cells |
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Chin. Phys. B
2012 Vol.21 (11): 118401-118401
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[HTML 1 KB]
[PDF 2889 KB]
(1246)
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117307 |
Yu Xin-Ge (于欣格), Yu Jun-Sheng (于军胜), Huang Wei (黄伟), Zeng Hong-Juan (曾红娟 ) |
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Enhanced charge carrier injection in heterojunction organic field-effect transistor by inserting an MoO3 buffer layer |
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Chin. Phys. B
2012 Vol.21 (11): 117307-117307
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[HTML 1 KB]
[PDF 410 KB]
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58503 |
Su Yue-Ju(苏跃举), Wu Xiao-Ming(吴晓明), Hua Yu-Lin(华玉林), Shen Li-Ying(申利莹), Jiao Zhi-Qiang(焦志强), Dong Mu-Sen(董木森), and Yin Shou-Gen(印寿根) |
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Highly efficient blue fluorescent OLEDs with doped double emitting layers based on p–n heterojunctions |
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Chin. Phys. B
2012 Vol.21 (5): 58503-058503
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[HTML 1 KB]
[PDF 165 KB]
(1479)
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58501 |
Ge Ji(葛霁), Liu Hong-Gang(刘洪刚), Su Yong-Bo(苏永波), Cao Yu-Xiong(曹玉雄), and Jin Zhi(金智) |
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Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors |
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Chin. Phys. B
2012 Vol.21 (5): 58501-058501
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37104 |
LŰ Ling(吕玲), Zhang Jin-Cheng(张进成), Xue Jun-Shuai(薛军帅), Ma Xiao-Hua(马晓华), Zhang Wei(张伟), Bi Zhi-Wei(毕志伟), Zhang Yue(张月), and Hao Yue(郝跃) |
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Neutron irradiation effects on AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2012 Vol.21 (3): 37104-037104
[Abstract]
(1368)
[HTML 1 KB]
[PDF 330 KB]
(1707)
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98501 |
Xu Xiao-Bo(徐小波), Xu Kai-Xuan(徐凯选), Zhang He-Ming(张鹤鸣), and Qin Shan-Shan(秦珊珊) |
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A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects |
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Chin. Phys. B
2011 Vol.20 (9): 98501-098501
[Abstract]
(1478)
[HTML 0 KB]
[PDF 140 KB]
(737)
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74401 |
Jin Dong-Yue(金冬月), Zhang Wan-Rong(张万荣), Fu Qiang(付强), Chen Liang(陈亮), Xiao Ying(肖盈), Wang Ren-Qing(王任卿), and Zhao Xin(赵昕) |
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Designing power heterojunction bipolar transistors with non-uniform emitter finger lengths to achieve high thermal stability |
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Chin. Phys. B
2011 Vol.20 (7): 74401-074401
[Abstract]
(1467)
[HTML 0 KB]
[PDF 3052 KB]
(694)
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64401 |
Jin Dong-Yue(金冬月), Zhang Wan-Rong(张万荣), Chen Liang(陈亮), Fu Qiang(付强), Xiao Ying(肖盈), Wang Ren-Qing(王任卿), and Zhao Xin(赵昕) |
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Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors |
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Chin. Phys. B
2011 Vol.20 (6): 64401-064401
[Abstract]
(1473)
[HTML 0 KB]
[PDF 1812 KB]
(877)
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58503 |
Xu Xiao-Bo(徐小波), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), and Qu Jiang-Tao(屈江涛) |
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Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator |
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Chin. Phys. B
2011 Vol.20 (5): 58503-058503
[Abstract]
(1303)
[HTML 0 KB]
[PDF 433 KB]
(950)
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58502 |
Xu Xiao-Bo (徐小波), Zhang He-Ming (张鹤鸣), Hu Hui-Yong (胡辉勇), Ma Jian-Li (马建立) |
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Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors |
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Chin. Phys. B
2011 Vol.20 (5): 58502-058502
[Abstract]
(1494)
[HTML 0 KB]
[PDF 468 KB]
(1261)
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57302 |
Xiong Chao(熊超), Yao Ruo-He(姚若河), and Geng Kui-Wei(耿魁伟) |
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Photovoltage analysis of a heterojunction solar cell |
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Chin. Phys. B
2011 Vol.20 (5): 57302-057302
[Abstract]
(1522)
[HTML 0 KB]
[PDF 179 KB]
(2976)
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37304 |
Xing Jie(邢杰), Guo Er-Jia(郭尔佳), and Wen Juan(温娟) |
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Photoelectric property of LaAlO3-δ/Si heterojunctions with different oxygen contents |
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Chin. Phys. B
2011 Vol.20 (3): 37304-037304
[Abstract]
(1306)
[HTML 1 KB]
[PDF 1831 KB]
(683)
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108502 |
Xu Xiao-Bo(徐小波), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇) Li Yu-Chen(李妤晨), and Qu Jiang-Tao(屈江涛) |
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Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator |
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Chin. Phys. B
2011 Vol.20 (10): 108502-108502
[Abstract]
(1450)
[HTML 0 KB]
[PDF 503 KB]
(963)
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18502 |
Xu Xiao-Bo(徐小波), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Ma Jian-Li(马建立), and Xu Li-Jun(许立军) |
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Analytical base–collector depletion capacitance in vertical SiGe heterojunction bipolar transistors fabricated on CMOS-compatible silicon on insulator |
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Chin. Phys. B
2011 Vol.20 (1): 18502-018502
[Abstract]
(1604)
[HTML 0 KB]
[PDF 263 KB]
(1014)
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18501 |
Chen Liang(陈亮), Zhang Wan-Rong(张万荣), Jin Dong-Yue(金冬月), Shen Pei(沈珮), Xie Hong-Yun(谢红云), Ding Chun-Bao(丁春宝),Xiao Ying(肖盈),Sun Bo-Tao(孙博韬), and Wang Ren-Qing(王任卿) |
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Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing |
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Chin. Phys. B
2011 Vol.20 (1): 18501-018501
[Abstract]
(1523)
[HTML 0 KB]
[PDF 4405 KB]
(1345)
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87301 |
Yang Fang(杨芳), Jin Kui-Juan(金奎娟), Huang Yan Hong(黄延红), He Meng(何萌), LÜ Hui-Bin(吕惠宾), and Yang Guo-Zhen(杨国桢) |
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The Sr content influence on the positive magnetoresistance in La1-xSrxMnO3/Si heterojunctions |
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Chin. Phys. B
2010 Vol.19 (8): 87301-087301
[Abstract]
(1788)
[HTML 1 KB]
[PDF 349 KB]
(733)
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37803 |
Chen Shang-Hui(陈尚辉), Chen Jian(陈建), Deng Shao-Zhi(邓少芝), and Xu Ning-Sheng(许宁生) |
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Towards an optical coupler using fine-wire: a study of the photovoltaic effect of a heterojunction formed in a single fine-wire of tungsten oxides |
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Chin. Phys. B
2010 Vol.19 (3): 37803-037803
[Abstract]
(1675)
[HTML 1 KB]
[PDF 2870 KB]
(996)
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37106 |
Cao Jin(曹进), Hong Fei(洪飞), Xing Fei-Fei(邢菲菲), Gu Wen(顾文), Guo Xin-An(郭新安), Zhang Hao(张浩), Wei Bin(魏斌), Zhang Jian-Hua(张建华), and Wang Jun(王军) |
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High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification |
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Chin. Phys. B
2010 Vol.19 (3): 37106-037106
[Abstract]
(1697)
[HTML 1 KB]
[PDF 1857 KB]
(946)
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37104 |
Liu Hong-Xia(刘红霞), Zhang He-Ming(张鹤鸣), Song Jiu-Xu(宋久旭), and Zhang Zhi-Yong(张志勇) |
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Electronic transport properties of an (8,0) carbon/boron nitride nanotube heterojunction |
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Chin. Phys. B
2010 Vol.19 (3): 37104-037104
[Abstract]
(1903)
[HTML 1 KB]
[PDF 1148 KB]
(1536)
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118601 |
Liu Xiao-Dong(刘晓东), Xu Zheng(徐征), Zhang Fu-Jun(张福俊), Zhao Su-Ling(赵谡玲), Zhang Tian-Hui(张天慧), Gong Wei(龚伟), Song Jing-Lu (宋晶路), Kong Chao(孔超), Yan Guang(闫光), and Xu Xu-Rong(徐叙瑢) |
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Influence of small-molecule material on performance of polymer solar cells based on MEH-PPV:PCBM blend |
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Chin. Phys. B
2010 Vol.19 (11): 118601-118601
[Abstract]
(1453)
[HTML 0 KB]
[PDF 318 KB]
(889)
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117306 |
Xie Yan-Wu (谢燕武), Guo De-Feng (郭得峰), Sun Ji-Rong(孙继荣), and Shen Bao-Gen(沈保根) |
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Effect of film thickness on interfacial barrier of manganite-based heterojunctions |
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Chin. Phys. B
2010 Vol.19 (11): 117306-110203
[Abstract]
(1372)
[HTML 1 KB]
[PDF 942 KB]
(664)
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3002 |
Li Jian-Feng(李建丰), Chang Wen-Li(常文利), Ou Gu-Ping(欧谷平), and Zhang Fu-Jia(张福甲) |
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Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide |
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Chin. Phys. B
2009 Vol.18 (7): 3002-3007
[Abstract]
(1366)
[HTML 1 KB]
[PDF 1577 KB]
(862)
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734 |
Liu Hong-Xia(刘红霞), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), and Song Jiu-Xu(宋久旭) |
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Structural feature and electronic property of an (8, 0) carbon--silicon carbide nanotube heterojunction |
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Chin. Phys. B
2009 Vol.18 (2): 734-737
[Abstract]
(1144)
[HTML 0 KB]
[PDF 540 KB]
(665)
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5437 |
Zhang Min(张敏) and Ban Shi-Liang(班士良) |
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Screening influence on the Stark effect of impurity states in strained wurtzite GaN/AlxGa1-xN heterojunctions under pressure |
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Chin. Phys. B
2009 Vol.18 (12): 5437-5442
[Abstract]
(1461)
[HTML 1 KB]
[PDF 161 KB]
(698)
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4966 |
Zhu Feng(朱峰), Chen Zhi-Ming(陈治明), Li Lian-Bi(李连碧), Zhao Shun-Feng(赵顺峰), and Lin Tao(林涛) |
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SiC based Si/SiC heterojunction and its rectifying characteristics |
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Chin. Phys. B
2009 Vol.18 (11): 4966-4969
[Abstract]
(1818)
[HTML 1 KB]
[PDF 2369 KB]
(861)
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298 |
Yin Zhi-Hua(尹志华), Long Yun-Ze(龙云泽), Huang Kun(黄琨), Wan Mei-Xiang(万梅香), and Chen Zhao-Jia(陈兆甲) |
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Rectifying effect of heterojunction fabricated in freestanding thin film of polyaniline containing azobenzene side-chain |
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Chin. Phys. B
2009 Vol.18 (1): 298-302
[Abstract]
(1213)
[HTML 1 KB]
[PDF 665 KB]
(1004)
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4305 |
Hao Lei (郝 雷), Wang Jun(汪 军) |
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Interface dipole induced by asymmetric exchange effect in Mott-insulator/Mott-insulator heterojunction |
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Chin. Phys. B
2008 Vol.17 (11): 4305-4311
[Abstract]
(1251)
[HTML 1 KB]
[PDF 523 KB]
(529)
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290 |
Guo Bao-Zeng(郭宝增), Gong Na(宫娜), and Yu Fu-Qiang(于富强) |
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Calculations of two dimensional electron gas distributions in AlGaN/GaN material system |
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Chin. Phys. B
2008 Vol.17 (1): 290-295
[Abstract]
(1779)
[HTML 1 KB]
[PDF 181 KB]
(1796)
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730 |
Nie Hai(聂海), Zhang Bo(张波), and Tang Xian-Zhong(唐先忠) |
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Significant improvement of OLED efficiency and stability by doping both HTL and ETL with different dopant in heterojunction of polymer/small-molecules |
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Chin. Phys. B
2007 Vol.16 (3): 730-734
[Abstract]
(1776)
[HTML 1 KB]
[PDF 158 KB]
(2549)
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533 |
Sheng Wei(盛威), Wang Yi(王羿), and Zhou Guang-Hui(周光辉) |
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Persistent spin current in a quantum wire with weak Dresselhaus spin--orbit coupling |
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Chin. Phys. B
2007 Vol.16 (2): 533-536
[Abstract]
(1481)
[HTML 1 KB]
[PDF 113 KB]
(540)
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1255 |
Lü Zheng (吕政), Chen Zhi-Ming (陈治明), Pu Hong-Bin (蒲红斌) |
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SiCGe/SiC heterojunction and its MEDICI simulation of optoelectronic characteristics |
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Chin. Phys. B
2005 Vol.14 (6): 1255-1258
[Abstract]
(1127)
[HTML 1 KB]
[PDF 253 KB]
(551)
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1114 |
Ma Li (马丽), Gao Yong (高勇), Wang Cai-Lin (王彩琳) |
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A novel type of ultra fast and ultra soft recovery SiGe/Si heterojunction power diode with an ideal ohmic contact |
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Chin. Phys. B
2004 Vol.13 (7): 1114-1119
[Abstract]
(1088)
[HTML 1 KB]
[PDF 296 KB]
(466)
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