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Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors |
Xu Xiao-Bo (徐小波), Zhang He-Ming (张鹤鸣), Hu Hui-Yong (胡辉勇), Ma Jian-Li (马建立) |
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract Silicon germanium (SiGe) heterojunction bipolar transistor (HBT) on thin silicon-on-insulator (SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology. The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion, which is different from that of a bulk counterpart. A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation. The Early voltage shows a kink with the increase of the reverse base–collector bias. Large differences are observed between SOI devices and their bulk counterparts. The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design, the simulation and the fabrication of high performance SOI SiGe devices and circuits.
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Received: 24 December 2010
Revised: 12 January 2011
Accepted manuscript online:
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PACS:
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85.30.Pq
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(Bipolar transistors)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.-z
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(Semiconductor devices)
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Fund: Project supported by the National Ministries and Commissions (Grant Nos. 51308040203 and 6139801), the Fundamental Research Funds for the Central Universities of China (Grant Nos. 72105499 and 72104089), and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008). |
Cite this article:
Xu Xiao-Bo (徐小波), Zhang He-Ming (张鹤鸣), Hu Hui-Yong (胡辉勇), Ma Jian-Li (马建立) Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors 2011 Chin. Phys. B 20 058502
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[1] |
Geynet B, Chevalier P, Vandelle B, Brossard F, Zerounian N, Buczko M, Gloria D, Aniel F, Dambrine G, Danneville F, Dutartre D and Chanter A 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Monteray, CA, USA, October 13--15, 2008 p. 121
|
[2] |
Floyd B, Pfeiffer U, Reynold S, Valdes-Garcia A, Haymes C, Katayama Y, Nakano D, Beukema T, Gaucher B and Soyuer M 2007 it Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Long Beach, CA, USA, January 10--12, 2007 p. 213
|
[3] |
Shahidi G G 2002 IBM J. Res. Dev. 46 121
|
[4] |
Cai J, Ajmera A, Ouyang C, Oldiges P, Steigerwalt M, Stein K, Jenkins K, Shahidi G and Ning T 2002 Symposium on VLSI Technology Digest of Technical Papers Honolulu, HI, United states, June 11--13, 2002 p. 172
|
[5] |
Avenier G, Fregonese S, Chevalier P, Bustos J, Saguin F, Schwartzmann T, Maneux C, Zimmer T and Chantre A 2008 IEEE Trans. Electron Devices 55 585
|
[6] |
Fregonese S, Avenier G, Maneux C, Chantre A and Zimmer T it Proceedings of ESSDERC 2005, 31st European Solid-State Device Research Conference Grenoble, France, September 12--16, 2005 p. 153
|
[7] |
Avenier G, Schwartzmann T, Chevalier P, Vandelle B, Rubaldo L, Dutratre D, Boissonnet L, Saguin F, Pantel R, Fregonese S, Maneux C, Zimmer T and Chantre A 2005 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Santa Barbara, CA, USA, October 9--11, 2005 p. 128
|
[8] |
Mijalkovic S 2003 Electron Lett. 39 1757
|
[9] |
Getreu I E 1978 Modeling the Bipolar Transistor (Elsevier: Amsterdam) pp. 233--235
|
[10] |
Bean J C 1992 Proc. IEEE 80 571
|
[11] |
Schroter M http://www.iee.et.tu-dresden.de/iee/eb/hic_ new/hic_doc.html
|
[12] |
Fregonese S, Avenier G, Maneux, C, Chantre A and Zimmer T 2005 IEEE Bipolar/BiCMOS circuits and Technology Meeting Santa Barbara, CA, USA, October 9--11, 2005 p. 184
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