CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification |
Cao Jin(曹进)a), Hong Fei(洪飞)a), Xing Fei-Fei(邢菲菲)b), Gu Wen(顾文)a), Guo Xin-An(郭新安)a), Zhang Hao(张浩)a), Wei Bin(魏斌)a), Zhang Jian-Hua(张建华)a), and Wang Jun(王军)a)† |
a Key Laboratory of Advanced Display and System Application (Shanghai University) and Special Display Technology (Hefei University of Technology), Ministry of Education, Shanghai 200072, China; b Chemistry Department, College of Sciences, Shanghai University, Shanghai 200444, China |
|
|
Abstract This paper presents two n-channel organic heterojunction transistors with modified insulator by using hexadecafluorophthalocyaninatocopper (F16CuPc)/copper phthalocyanine (CuPc) and F16CuPc/pentacene as the active layers. Compared with a single-layer device, it reports that an improved field-effect mobility and a 6-fold higher drain current are observed. The highest mobility of 0.081 cm2/(V.s) was obtained from F16CuPc/CuPc heterojunction devices. This result is attributed to the dual effects of the organic heterojunction and interface modification. Furthermore, for two heterojunction devices, the performance of the F16CuPc/CuPc-based transistor is better than that of F16CuPc/pentacene. This is attributed to the morphologic match of two organic components.
|
Received: 29 May 2009
Revised: 10 June 2009
Accepted manuscript online:
|
PACS:
|
85.30.Tv
|
(Field effect devices)
|
|
73.40.Lq
|
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
|
|
68.37.Ps
|
(Atomic force microscopy (AFM))
|
|
Fund: Project supported by the National
Natural Science Foundation of China (Grant No.~60806007), the
Shanghai `Post-Qi-Ming-Xing Plan' for Young Scientists, China (Grant
No.~07QA14023), and the Shanghai Committee of Science and Technology
(Grant Nos.~08DZ1140702 and 08520511200). |
Cite this article:
Cao Jin(曹进), Hong Fei(洪飞), Xing Fei-Fei(邢菲菲), Gu Wen(顾文), Guo Xin-An(郭新安), Zhang Hao(张浩), Wei Bin(魏斌), Zhang Jian-Hua(张建华), and Wang Jun(王军) High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification 2010 Chin. Phys. B 19 037106
|
[1] |
Crone B, Dodabalapur A, Lin Y Y, Filas R W, Bao Z, Laduca A, Sarpeshkar R, Katz HE and Li W 2000 Nature 403 521
|
[2] |
Meijer E J, de Leeuw D M, Setayesh S, Veenendaal E van, Huisman B H, Blom P W M, Hummelen J C, Scherf U and Klapwijk T M 2003 Nat. Mater. 2 678
|
[3] |
Anthopoulos T D, Singh B, Marjanovic N, Sariciftci N S, MontaigneRamil A, Sitter H, Colle M and de Leeuw D M 2006 Appl. Phys.Lett. 89 213504
|
[4] |
Itaka K, Yamashiro M, Yamaguchi J, Haemori M, Yaginuma S, Matsumoto Y, Kondo M and Koinuma H 2006 Adv. Mater. 18 1713
|
[5] |
Tatemichi S, Ichikawa M, Koyama T and Taniguchi Y 2006 Appl.Phys. Lett. 89 112108
|
[6] |
Zhang X H and Kippelen B 2008 Appl. Phys. Lett. 93 133305
|
[7] |
Bao Z, Lovinger A J and Brown J 1998 J. Am. Chem. Soc. 120 207
|
[8] |
Ling M M and Bao Z 2006 Org. Electron. 6 568
|
[9] |
Yuan G C, Xu Z, Zhao S L, Zhang F J, Jiang W W, Song D D, Zhu H N, Li SY, Huang J Y, Huang H and Xu X R 2008 Chin. Phys. B 171887
|
[10] |
Bao Z, Lovinger A J and Dodabalapur A 1996 Appl. Phys. Lett. 69 3066
|
[11] |
Wang J, Yan X J, Xu Y X, Zhang J and Yan D H 2004 Appl. Phys.Lett. 85 5424
|
[12] |
Kobayashi S, Nishikawa T, Takenobu T, Mori S, Shimoda T, Mitani T, Shimotani H, Yoshimoto N, Ogawa S and Iwasa Y 2004 Nat. Mater. 3 317
|
[13] |
Chua L L, Zaumseil J, Chang J F, Ou E C W, Ho P K H, Sirringhaus Hand Friend R H 2005 Nature (London) 434 194
|
[14] |
Wang J, Wang H, Yan X J, Huang H C and Yan D H 2005 Appl.Phys. Lett. 87 093507
|
[15] |
Yan X J, Wang J, Wang H, Wang H and Yan D H 2006 Appl. Phys.Lett. 89 053510
|
[16] |
Jackson T N, Lin Y Y, Gundlach D J and Klauk H 1998 IEEE J.Sel. Top. Quantum Electron. 4 100
|
[17] |
Tao C L, Zhang X H, Dong M J, Liu Y Y, Sun S, Ou G P, Zhang F J and Zhang HL 2008 Chin. Phys. B 17 0281
|
[18] |
Zhu M, Liang G, Cui T and Varahramyan K 2003 Solid-StateElectron. 47 1855
|
[19] |
Wang H, Wang J, Huang H C, Yan X J and Yan D H 2006 Org.Electron. 7 369
|
[20] |
Yang C Y, Cheng S S, Ou C W, Chuang Y C, Wu M C, Dhananjay and Chu C W2008 J. Appl. Phys. 103 094519
|
[21] |
Peisert H, Knupfer M, Schwieger T, Auerhammer J M, Golden M S and Fink J2002 J. Appl. Phys. 91 4872
|
[22] |
Kim C, Facchetti A and Marks T J 2007 Adv. Mater. 19 2561
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|