Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation
Ya-Hui Feng(冯亚辉)1, Hong-Xia Guo(郭红霞)1,2,†, Xiao-Yu Pan(潘霄宇)2, Jin-Xin Zhang(张晋新)3, Xiang-Li Zhong(钟向丽)1, Hong Zhang(张鸿)1, An-An Ju(琚安安)1, Ye Liu(刘晔)1, and Xiao-Ping Ouyang(欧阳晓平)1,2
1 School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China; 2 State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation, Northwest Institute of Nuclear Technology, Xi'an 710024, China; 3 School of Space Science and Technology, Xidian University, Xi'an 710071, China
Abstract The single event effect of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed laser. With variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was studied. Moreover, the single event transient produced by laser irradiation at a wavelength of 532 nm was more pronounced than at a wavelength of 1064 nm. Finally, the impact of the equivalent linear energy transfer of the 1064 nm pulsed laser on the single event transient was qualitatively examined by performing technology computer-aided design simulations, and a good consistency between the experimental data and the simulated outcomes was attained.
Ya-Hui Feng(冯亚辉), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Jin-Xin Zhang(张晋新),Xiang-Li Zhong(钟向丽), Hong Zhang(张鸿), An-An Ju(琚安安),Ye Liu(刘晔), and Xiao-Ping Ouyang(欧阳晓平) Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation 2023 Chin. Phys. B 32 066105
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