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Photoelectric property of LaAlO3-δ/Si heterojunctions with different oxygen contents |
Xing Jie(邢杰)a)†, Guo Er-Jia(郭尔佳)b), and Wen Juan(温娟)b) |
a School of Materials Sciences and Technology, China University of Geosciences, Beijing 100083, China; b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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Abstract Three oxide heterojunctions made of LaAlO3-δ/Si are fabricated under various oxygen pressures by laser molecular-beam epitaxy. They all show nonlinear and rectifying current–voltage characteristics, and the distinct difference in rectification behaviour among them. Their photoelectric properties are examined by a visible HeNe laser and an ultraviolet Hg lamp. We find that their photovoltaic responses are closely related to the oxygen contents in the LaAlO3-δ films. The junction fabricated under the lower oxygen pressure has a higher photovoltaic sensitivity. The possible mechanism is suggested based on the band structure of the p–n heterojunction.
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Received: 23 August 2010
Revised: 21 November 2010
Accepted manuscript online:
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PACS:
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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75.30.Gr
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73.50.Pz
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(Photoconduction and photovoltaic effects)
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Fund: Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. 2010ZY50), and the Science and Technology Foundation for Young Teachers of China University of Geosciences (Beijing, China) (Grant No. 51900961132). |
Cite this article:
Xing Jie(邢杰), Guo Er-Jia(郭尔佳), and Wen Juan(温娟) Photoelectric property of LaAlO3-δ/Si heterojunctions with different oxygen contents 2011 Chin. Phys. B 20 037304
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[1] |
Chang W, Horwitz J S, Carter A C, Pond J M Kirchoefer S W, Gilmore C M and Chrisey D B 1999 Appl. Phys. Lett. 74 1033
|
[2] |
Ahn C H, Rabe K M and Triscone J M 2004 Science 303 488
|
[3] |
Lu H B, Dai S Y, Chen Z H, Zhou Y L, Cheng B L, Jin K J, Liu L F and Yang G Z 2005 Appl. Phys. Lett. 86 032502
|
[4] |
Mitra C Raychaudhuri P, Dorr K, Muller K H, Schultz L, Oppeneer P M and Wirth S 2003 Phys. Rev. Lett. 90 017202
|
[5] |
Ohtomo A and Hwang H Y 2004 Nature 427 423
|
[6] |
Chen G F, Li Z, Wu D, Li G, Hu W Z, Dong J, Zheng P, Luo J L and Wang N L 2008 Phys. Rev. Lett. 100 247002
|
[7] |
Zhao K, Huang Y H, Lu H B, He M, Jin K J, Chen Z H, Zhou Y L, Dai S Y and Yang G Z 2005 Chin. Phys. 14 420
|
[8] |
Jin K J, Lu H B, Zhou Q L, Zhao K, Cheng B L, Chen Z H, Zhou Y L and Yang G Z 2005 Phys. Rev. B 71 184428
|
[9] |
Yang F, Jin K J, Lu H B, He M, Wang C, Wen J and Yang G Z 2010 Sci. China Ser. G-Phys. Mech. Astron. 53 852
|
[10] |
Sun J R, Yeung C F, Zhao K, Zhou L Z, Leung C H, Wong H K and Shen B G 2000 Appl. Phys. Lett. 76 1164
|
[11] |
Sun J R, Lai C H and Wong H K 2004 Appl. Phys. Lett. 85 38
|
[12] |
Xing J, Jin K J, Lu H B, He M, Liu G Z, Qiu J and Yang G Z 2008 Appl. Phys. Lett. 92 071113
|
[13] |
Yan L, Lu H B, Tan G T, Chen F, Zhou Y L, Yang G Z, Liu W and Chen Z H 2003 Appl. Phys. A 77 721
|
[14] |
Xiang W F, Lu H B, Yan L, Guo H Z, Liu L F, Zhou Y L and Yang G Z 2003 J. Appl. Phys. 93 533
|
[15] |
Huang Y H, Zhao K, Lu H B, Jin K J, He M, Chen Z H, Zhou Y L and Yang G Z 2006 Physica B 373 313
|
[16] |
Wen J, Guo H Z, Xing J, Lu H B, Jin K J, He M and Yang G Z 2010 Science in China series G: Physics Mechanics and Astronomy 53 2080
|
[17] |
Sze S M 1999 Physics of Semiconductor Device (New York: Wiley)
|
[18] |
Wen J, Jin K J, He M, Lu H B, Yang F and Yang G Z 2009 Appl. Phys. Lett. 94 061118
|
[19] |
Han P, Jin K J, Lu H B, Zhou Q L, Zhou Y L and Yang G Z 2007 Appl. Phys. Lett. 91 182102 endfootnotesize
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