Interfacial photoconductivity effect of type-I and type-II Sb2Se3/Si heterojunctions for THz wave modulation

doi:10.1088/1674-1056/acf301

Abstract An in-depth understanding of the photoconductivity and photocarrier density at the interface is of great significance for improving the performance of optoelectronic devices. However, extraction of the photoconductivity and photocarrier density at the heterojunction interface remains elusive. Herein, we have obtained the photoconductivity and photocarrier density of 173 nm Sb₂Se₃/Si (type-I heterojunction) and 90 nm Sb₂Se₃/Si (type-II heterojunction) utilizing terahertz (THz) time-domain spectroscopy (THz-TDS) and a theoretical Drude model. Since type-I heterojunctions accelerate carrier recombination and type-II heterojunctions accelerate carrier separation, the photoconductivity and photocarrier density of the type-II heterojunction (21.8× 10⁴ S·m^-1, 1.5× 10¹⁵ cm^-3) are higher than those of the type-I heterojunction (11.8× 10⁴ S·m^-1, 0.8× 10¹⁵ cm^-3). These results demonstrate that a type-II heterojunction is superior to a type-I heterojunction for THz wave modulation. This work highlights THz-TDS as an effective tool for studying photoconductivity and photocarrier density at the heterojunction interface. In turn, the intriguing interfacial photoconductivity effect provides a way to improve the THz wave modulation performance.

Keywords: photoconductivity Sb₂Se₃/Si heterojunctions THz-TDS Drude model

Received: 26 June 2023
Revised: 12 August 2023
Accepted manuscript online: 23 August 2023

PACS:	67.30.hp	(Interfaces)
	68.35.Fx	(Diffusion; interface formation)
	79.60.Jv	(Interfaces; heterostructures; nanostructures)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12261141662, 12074311, and 12004310).

Corresponding Authors: Yuan-Yuan Huang, Xin-Long Xu
E-mail: yyhuang@nwu.edu.cn;xlxuphy@nwu.edu.cn

Cite this article:

Xue-Qin Cao(曹雪芹), Yuan-Yuan Huang(黄媛媛), Ya-Yan Xi(席亚妍), Zhen Lei(雷珍), Jing Wang(王静), Hao-Nan Liu(刘昊楠), Ming-Jian Shi(史明坚), Tao-Tao Han(韩涛涛), Meng-En Zhang(张蒙恩), and Xin-Long Xu(徐新龙) Interfacial photoconductivity effect of type-I and type-II Sb₂Se₃/Si heterojunctions for THz wave modulation 2023 Chin. Phys. B 32 116701

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Interfacial photoconductivity effect of type-I and type-II Sb2Se3/Si heterojunctions for THz wave modulation

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Interfacial photoconductivity effect of type-I and type-II Sb₂Se₃/Si heterojunctions for THz wave modulation