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An accurate analytical surface potential model of heterojunction tunnel FET |
| Yunhe Guan(关云鹤)†, Huan Li(黎欢), Haifeng Chen(陈海峰), and Siwei Huang(黄思伟) |
| School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China |
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Abstract Based on the accurate and efficient thermal injection method, we develop a fully analytical surface potential model for the heterojunction tunnel field-effect transistor (H-TFET). This model accounts for both the effects of source depletion and inversion charge, which are the key factors influencing the charge, capacitance and current in H-TFET. The accuracy of the model is validated against TCAD simulation and is greatly improved in comparison with the conventional model based on Maxwell-Boltzmann approximation. Furthermore, the dependences of the surface potential and electric field on biases are well predicted and thoroughly analyzed.
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Received: 27 December 2022
Revised: 13 April 2023
Accepted manuscript online: 16 April 2023
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PACS:
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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85.30.Tv
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(Field effect devices)
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| Fund: Project supported in part by the National Natural Science Foundation of China (Grant No. 62104192) and in part by the Natural Science Basic Research Program of Shaanxi Province (Grant No. 2021JQ-717). |
Corresponding Authors:
Yunhe Guan
E-mail: gyhflc@xupt.edu.cn
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Cite this article:
Yunhe Guan(关云鹤), Huan Li(黎欢), Haifeng Chen(陈海峰), and Siwei Huang(黄思伟) An accurate analytical surface potential model of heterojunction tunnel FET 2023 Chin. Phys. B 32 108506
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[1] Choi W Y, Park B G, Lee J D and Liu T K 2007 IEEE Electron Device Lett. 28 743
[2] Ionescu A M and Riel H 2011 Nature 479 329
[3] Avci U E and Young I A 2013 IEEE International Electron Devices Meeting, December 09-11, 2013, Washington, DC, USA, p. 4.3.1
[4] Memišević E, Hellenbrand M, Lind E, Persson A R, Sant S, Schenk A, Svensson J, Wallenberg R and Wernersson L E 2017 Nano Lett. 17 4373
[5] Chen S, Wang S, Liu H, Han T and Zhang H 2022 Nanotechnology 32 225205
[6] Shao Y and Alamo J A 2022 IEEE Electron Device Lett. 43 846
[7] Li W and Woo J C S 2020 IEEE Trans. Electron Devices 67 1480
[8] Kim H W and Kwon D 2021 IEEE J. Electron Devices Soc. 9 359
[9] Chen Z X, Liu W J, Liu J N, Wang Q H, Zhang X G, Xu J, Li Q H, Bai W and Tang X D 2022 Chin. Phys. B 31 058501
[10] Xu H F, Sun W and Wang N 2021 Chin. Phys. B 30 078503
[11] He Y H, Mao W, Du M, Peng Z L, Wang H Y, Zheng X F, Wang C, Zhang J C and Hao Y 2021 Chin. Phys. B 30 058501
[12] Zhang W H, Li Z C, Guan Y H and Zhang Y F 2017 Chin. Phys. B 26 078502
[13] Jain P, Yadav C, Agarwal A and Chauhan Y S 2017 Solid-State Electron. 134 74
[14] Cheng Q, Khandelwal S and Zeng Y 2022 IEEE Trans. Electron Devices 69 3966
[15] Kumar S, Goel E, Singh K, Singh B, Kumar Singh P, Baral K and Jitl S 2017 IEEE Trans. Electron Devices 64 960
[16] Xu H F, Sun W and Han X F 2018 Jpn. J. Appl. Phys. 57 064201
[17] Guan Y H, Li Z C, Carrillo-Nuñez H, Zhang Y F, Georgiev V P and Asenov A 2019 IEEE Electron Device Lett. 40 1001
[18] Taur Y, Wu J Z and Min J 2015 IEEE Trans. Electron Devices 62 1399
[19] Wu C L, Huang R, Huang Q Q, Wang C, Wang J X and Wang Y Y 2014 IEEE Trans. Electron Devices 61 2690
[20] Min J, Wu J Z and Taur Y 2015 IEEE Electron Device Lett. 36 1094
[21] Lu B, Wang D W, Cui Y, Li Z, Chai G Q, Dong L P, Zhou J R, Wang G L, Miao Y H, Lv Z J and Lu H L 2022 IEEE Trans. Electron Devices 69 419
[22] Mehta J U, Borders W A, Liu H, Pandey R, Datta S and Lunardi L 2016 IEEE Trans. Electron Devices 63 2163
[23] Lu B, Wang D W, Chen Y L, Cui Y, Miao Y H and Dong L P 2021 Acta Phys. Sin. 70 218501 (in Chinese)
[24] Li D, Zhang B L, Lou H J, Zhang L N, Lin X N and Chan M S 2015 IEEE J. Electron Devices Soc. 3 447
[25] Xu W J, Wong H and Iwai H 2015 Solid-State Electron. 111 171
[26] Dong Y P, Zhang L N, Li X B, Lin X N and Chan M S 2016 IEEE Trans. Electron Devices 63 4506
[27] Zhang L N, He J and Chan M S 2012 International Electron Devices Meeting, December 10-13, 2012, San Francisco, USA, p. 6.8.1
[28] Guan Y H, Li Z C, Zhang W H, Zhang Y F and Liang F 2018 IEEE Trans. Electron Devices 65 776
[29] Smets Q, Verhulst A S, Kazzi S El, Gundlach D, Richter C A, Mocuta A, Collaert N, Thean A V Y and Heyns M M 2016 IEEE Trans. Electron Devices 63 4248
[30] Choi K M and Choi W Y 2013 IEEE Electron Device Lett. 34 942
[31] TCAD Sentaurus Manual, Synopsys, Inc., Mountain View, CA, USA, 2013 |
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