A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects
Xu Xiao-Bo(徐小波)†, Xu Kai-Xuan(徐凯选), Zhang He-Ming(张鹤鸣), and Qin Shan-Shan(秦珊珊)
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract In this paper, we describe the saturation effect of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) fabricated on a thin silicon-on-insulator (SOI) with a step-by-step derivation of the model formulation. The collector injection width, the internal base—collector bias, and the hole density at the base—collector junction interface are analysed by considering the unique features of the internal and the external parts of the collector, as they are different from those of a bulk counterpart.
Xu Xiao-Bo(徐小波), Xu Kai-Xuan(徐凯选), Zhang He-Ming(张鹤鸣), and Qin Shan-Shan(秦珊珊) A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects 2011 Chin. Phys. B 20 098501
[1]
Avenier G, Fregonese S, Chevalier P, Bustos J, Saguin F, Schwartzmann T, Maneux C, Zimmer T and Chantre A 2008 IEEE Trans. Electron Devices 55 585
[2]
Fregonese S, Avenier G, Maneux, C, Chantre A and Zimmer T 2006 IEEE Trans. Electron Devices 53 296
[3]
Xu X B, Zhang H M, Hu H Y, Xu L J and Ma J L 2011 Acta Phys. Sin. 60 078502 (in Chinese)
[4]
Xu X B, Zhang H M, Hu H Y, Ma J L and Xu L J 2011 Chin. Phys. B 20 018502
[5]
Xu X B, Zhang H M, Hu H Y and Qu J T 2011 Chin. Phys. B 20 058503
[6]
Xu X B, Zhang H M, Hu H Y and Ma J L 2011 Chin. Phys. B 20 058502
[7]
Kull G M, Nagel L W, Lee S W, Lloyd P, Prendergast E J and Dirks H 1985 IEEE Trans. Electron Devices 32 1103
[8]
de Graaff H C and Kloosterman W J 1995 IEEE Trans. Electron Devices 42 274
[9]
Paasschens J C J, Kloosterman W J, Havens R J and de Graaff H C 2001 IEEE J. Solid St. Circ. 36 1390
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
