Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

doi:10.1088/1674-1056/20/10/108502

Abstract In this paper, we propose an analytical avalanche multiplication model for the next generation of SiGe silicon-on-insulator (SOI) heterojunction bipolar transistors (HBTs) and consider their vertical and lateral impact ionizations for the first time. Supported by experimental data, the analytical model predicts that the avalanche multiplication governed by impact ionization shows kinks and the impact ionization effect is small compared with that of the bulk HBT, resulting in a larger base-collector breakdown voltage. The model presented in the paper is significant and has useful applications in the design and simulation of the next generation of SiGe SOI BiCMOS technology.

Keywords: avalanche multiplication heterojunction bipolar transistor thin film silicon-on-insulator SiGe

Received: 30 August 2010
Revised: 19 May 2011
Accepted manuscript online:

PACS:	85.30.Pq	(Bipolar transistors)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.-z	(Semiconductor devices)

Fund: Project supported by the Science Foundation of National Ministries and Commissions (Grant Nos. 51308040203 and 6139801), the Fundamental Research Funds for the Central Universities of China (Grant Nos. 72105499 and 72104089), and the Natural Science Basic Research Program in Shaanxi Province of China (Grant No. 2010JQ8008).

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Xu Xiao-Bo(徐小波), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇) Li Yu-Chen(李妤晨), and Qu Jiang-Tao(屈江涛) Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator 2011 Chin. Phys. B 20 108502

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Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

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