Charge-mediated voltage modulation of magnetism in Hf0.5Zr0.5O2/Co multiferroic heterojunction

doi:10.1088/1674-1056/ac9a3b

Abstract We construct the Hall-bar device with the size of several hundred nanometers based on the HZO/Co multiferroic heterojunction. A remarkable voltage-controlled magnetism is observed in the device that possesses both ferroelectric property and perpendicular magnetic anisotropy (PMA). The nucleation field and coercivity can be modulated by voltage pulse while saturation field keeps stable. The non-volatile and reversible voltage-controlled magnetism is ascribable to interfacial charges caused by ferroelectric polarization. Meanwhile, the effective anisotropy energy density (K_u) can also be controlled by voltage pulse, a decrease of 83% and increase of 28% in K_u are realized under -3-V and 3-V pulses, respectively. Because the energy barrier is directly proportional to K_u under a given volume, a decreased or enhanced energy barrier can be controlled by voltage pulse. Thus, it is an effective method to realize low-power and high-stability magneto-resistive random-access memory (MRAM).

Keywords: multiferroic heterojunction voltage-controlled magnetism energy barrier

Received: 20 August 2022
Revised: 09 October 2022
Accepted manuscript online: 14 October 2022

PACS:	75.85.+t	(Magnetoelectric effects, multiferroics)
	75.70.Cn	(Magnetic properties of interfaces (multilayers, superlattices, heterostructures))
	77.55.Nv	(Multiferroic/magnetoelectric films)

Fund: Project supported by Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDA18000000), the Fund from the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2015097), and Guangzhou City Research and Development Program in Key Fields (Grant No. 202103020001).

Corresponding Authors: Jun Luo, Yan Cui
E-mail: luojun@ime.ac.cn;cuiyan@ime.ac.cn

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Jia Chen(陈佳), Peiyue Yu(于沛玥), Lei Zhao(赵磊), Yanru Li(李彦如), Meiyin Yang(杨美音), Jing Xu(许静), Jianfeng Gao(高建峰), Weibing Liu(刘卫兵), Junfeng Li(李俊峰), Wenwu Wang(王文武), Jin Kang(康劲), Weihai Bu(卜伟海), Kai Zheng(郑凯), Bingjun Yang(杨秉君), Lei Yue(岳磊), Chao Zuo(左超), Yan Cui(崔岩), and Jun Luo(罗军) Charge-mediated voltage modulation of magnetism in Hf_0.5Zr_0.5O₂/Co multiferroic heterojunction 2023 Chin. Phys. B 32 027504

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Charge-mediated voltage modulation of magnetism in Hf0.5Zr0.5O2/Co multiferroic heterojunction

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Charge-mediated voltage modulation of magnetism in Hf_0.5Zr_0.5O₂/Co multiferroic heterojunction