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Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect |
| Ya-Hui Feng(冯亚辉)1, Hong-Xia Guo(郭红霞)2,4,†, Yi-Wei Liu(刘益维)2, Xiao-Ping Ouyang(欧阳晓平)1,4, Jin-Xin Zhang(张晋新)3, Wu-Ying Ma(马武英)4, Feng-Qi Zhang(张凤祁)4, Ru-Xue Bai(白如雪)2, Xiao-Hua Ma(马晓华)1, and Yue Hao(郝跃)1 |
1 State Key Laboratory of Wide Bandgap Semiconductor Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China;
3 School of Space Science and Technology, Xidian University, Xi'an 710071, China;
4 State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation, Northwest Institute of Nuclear Technology, Xi'an 710024, China |
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Abstract The single event effect (SEE) sensitivity of silicon—germanium heterojunction bipolar transistor (SiGe HBT) irradiated by 100-MeV proton is investigated. The simulation results indicate that the most sensitive position of the SiGe HBT device is the emitter center, where the protons pass through the larger collector-substrate (CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-MeV proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly. Notably, at the same proton flux, there is only one single event transient (SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-MeV protons. To further evaluate the tolerance of the device, the influence of proton on SiGe HBT after gamma-ray (60Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.
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Received: 14 July 2023
Revised: 15 August 2023
Accepted manuscript online: 23 August 2023
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PACS:
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61.72.uf
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(Ge and Si)
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61.80.Ed
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(γ-ray effects)
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61.80.-x
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(Physical radiation effects, radiation damage)
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61.80.Jh
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(Ion radiation effects)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61574171, 61704127, 11875229, 51872251, and 12027813). |
Corresponding Authors:
Hong-Xia Guo
E-mail: guohxnint@126.com
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Cite this article:
Ya-Hui Feng(冯亚辉), Hong-Xia Guo(郭红霞), Yi-Wei Liu(刘益维), Xiao-Ping Ouyang(欧阳晓平), Jin-Xin Zhang(张晋新), Wu-Ying Ma(马武英), Feng-Qi Zhang(张凤祁), Ru-Xue Bai(白如雪), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect 2024 Chin. Phys. B 33 016104
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