Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells

doi:10.1088/1674-1056/26/6/068802

Abstract P-type silicon heterojunction (SHJ) solar cells with a-SiC:H(n) emitters were studied by numerical computer simulation in this paper. The influence of interface states, conduction band offset, and front contact on the performance of a-SiC:H(n)/c-Si(p) SHJ solar cells was investigated systematically. It is shown that the open circuit voltage (V_oc) and fill factor (FF) are very sensitive to these parameters. In addition, by analyzing equilibrium energy band diagram and electric field distribution, the influence mechanisms that interface states, conduction band offset, and front contact impact on the carrier transport, interface recombination and cell performance were studied in detail. Finally, the optimum parameters for the a-SiC:H(n)/c-Si(p) SHJ solar cells were provided. By employing these optimum parameters, the efficiency of SHJ solar cell based on p-type c-Si was significantly improved.

Keywords: silicon heterojunction solar cells interface states band offset front contact

Received: 13 August 2016
Revised: 06 January 2017
Accepted manuscript online:

PACS:	88.40.fc	(Modeling and analysis)
	88.40.hj	(Efficiency and performance of solar cells)
	88.40.jj	(Silicon solar cells)
	85.60.Bt	(Optoelectronic device characterization, design, and modeling)

Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2012AA050301) and Scientific Research of Hebei Education Department, China (Grant No. QN2017135).

Corresponding Authors: Zhi Qiao
E-mail: xqiao77@163.com

Cite this article:

Zhi Qiao(乔治), Jian-Li Ji(冀建利), Yan-Li Zhang(张彦立), Hu Liu(刘虎), Tong-Kai Li(李同锴) Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells 2017 Chin. Phys. B 26 068802

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Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells

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