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Chin. Phys. B, 2011, Vol. 20(5): 057302    DOI: 10.1088/1674-1056/20/5/057302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Photovoltage analysis of a heterojunction solar cell

Xiong Chao(熊超), Yao Ruo-He(姚若河), and Geng Kui-Wei(耿魁伟)
School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510641, China
Abstract  According to the p–n junction model of Shockley, the relationship between the equilibrium carrier concentrations of n-type and p-type semiconductors on the edges of the depletion region of a p–n junction solar cell is analysed. The calculation results show that the photovoltage can exceed the built-in voltage for a special kind of heterojunction solar cell. When the photovoltage exceeds the built-in voltage under illumination, the dark current and the photocurrent are impeded by the peak of voltage barrier at the interface and the expression of the total IV characteristic is given.
Keywords:  solar cells      built-in voltage      photovoltage      heterojunction  
Received:  10 July 2010      Revised:  23 December 2010      Accepted manuscript online: 
PACS:  73.40.-c (Electronic transport in interface structures)  
  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  88.40.H- (Solar cells (photovoltaics))  
  88.40.J- (Types of solar cells)  

Cite this article: 

Xiong Chao(熊超), Yao Ruo-He(姚若河), and Geng Kui-Wei(耿魁伟) Photovoltage analysis of a heterojunction solar cell 2011 Chin. Phys. B 20 057302

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