CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Photovoltage analysis of a heterojunction solar cell |
Xiong Chao(熊超), Yao Ruo-He(姚若河)†, and Geng Kui-Wei(耿魁伟) |
School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510641, China |
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Abstract According to the p–n junction model of Shockley, the relationship between the equilibrium carrier concentrations of n-type and p-type semiconductors on the edges of the depletion region of a p–n junction solar cell is analysed. The calculation results show that the photovoltage can exceed the built-in voltage for a special kind of heterojunction solar cell. When the photovoltage exceeds the built-in voltage under illumination, the dark current and the photocurrent are impeded by the peak of voltage barrier at the interface and the expression of the total I–V characteristic is given.
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Received: 10 July 2010
Revised: 23 December 2010
Accepted manuscript online:
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PACS:
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73.40.-c
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(Electronic transport in interface structures)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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88.40.H-
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(Solar cells (photovoltaics))
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88.40.J-
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(Types of solar cells)
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Cite this article:
Xiong Chao(熊超), Yao Ruo-He(姚若河), and Geng Kui-Wei(耿魁伟) Photovoltage analysis of a heterojunction solar cell 2011 Chin. Phys. B 20 057302
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[1] |
Kobayashi H, Liu Y L, Yamashita Y, Ivanco J, Imai S and Takahashi M 2006 Solar Energy 80 645
|
[2] |
Zhang W Y, Wu X P, Sun L J, Lin B X and Fu Z X 2008 Acta Phys. Sin. 57 4471 (in Chinese)
|
[3] |
Untila G G, Kost T N and Chebotareva A B 2009 Thin Solid Films 518 1345
|
[4] |
Xia G P, Feng L H, Cai Y P, Li B, Zhang J Q, Zheng J G and Lu T C 2009 Acta Phys. Sin. 58 6465 (in Chinese)
|
[5] |
Contreras M A, Ramanathan K, AbuShama J, Hasoon F, Young D L, Egaas B and Noufi R 2005 Prog. Photovolt: Res. Appl. 13 209
|
[6] |
Wang N N, Yu J S, Zang Y and Jiang Y D 2010 Chin. Phys. B 19 038602
|
[7] |
Sze S M and Kwok K N 2007 Physics of Semiconductor Devices (3rd ed) (New York: Wiley) p. 721
|
[8] |
Anderson R L 1962 Solid-State Electron. 5 431
|
[9] |
Frensley W R and Kroemer H 1977 Phys. Rev. B 16 2642
|
[10] |
Chang L L 1965 Solid-State Electron. 8 721
|
[11] |
Jeffery L G 2003 Handbook of Photovoltaic Science and Engineering (edited by Antonio L and Steven H) (New York: Wiley) p83
|
[12] |
Shockley W 1949 Bell Syst. Tech. J. 28 435
|
[13] |
Sah C T, Noyce R N and Shockley W 1957 Proc. IRE 45 1228
|
[14] |
Moll J L 1958 Proc. IRE 46 1076 endfootnotesize
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