| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Abnormal magnetoresistance effect in the Nb/Si superconductor-semiconductor heterojunction |
| Zhi-Wei Hu(胡志伟)1,2,† and Xiang-Gang Qiu(邱祥冈)1,2,3 |
1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Collaborative Innovation Center of Quantum Matter, Beijing 100084, China |
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Abstract Ultrathin superconducting Nb films of about 8 nm thick have been deposited on heavily doped Si substrates through DC magnetron sputtering and then the high-quality Nb/Si superconductor-semiconductor heterojunctions have been fabricated by electron beam lithography and reactive ion etching. An abnormal magnetoresistance effect, which manifests itself as a zero field resistance peak under a magnetic field applied perpendicular to the interface, has been distinctly observed when the Nb film is in the superconductiing state. By considering the heterojunction interface being equivalent to the structure of superconductor-barrier layer-superconductor configuration, we could generally understand this unusual effect based on the Andreev reflection mechanism. Our results can be of help for the future development on compatibility and scalability of the silicon-based nanoscale superconducting devices for integrated circuits and superconducting quantum electronics.
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Received: 04 July 2022
Revised: 17 August 2022
Accepted manuscript online: 19 August 2022
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PACS:
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74.81.Bd
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(Granular, melt-textured, amorphous, and composite superconductors)
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75.47.-m
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(Magnetotransport phenomena; materials for magnetotransport)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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Corresponding Authors:
Zhi-Wei Hu
E-mail: 2381956704@qq.com
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Cite this article:
Zhi-Wei Hu(胡志伟) and Xiang-Gang Qiu(邱祥冈) Abnormal magnetoresistance effect in the Nb/Si superconductor-semiconductor heterojunction 2023 Chin. Phys. B 32 037401
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