Abstract Optoelectronic characteristics of the SiC1-xGex /SiC heterojunction photodiode are simulated using MEDICI after the theoretical investigation of key properties for SiC1-xGex. The calculations show that SiC1-xGex /SiC with x=0.3 may have a small lattice mismatch with 3C-SiC and a good response to the visible light and near infrared light. The response spectrum of the SiC1-xGex /SiC heterojunction photodiodes, which consists of a p-type SiC1-xGex absorption layer with a doping concentration of $1\times10^{15}$cm－3, a thickness of 1.6μm and x=0.3, has a peak value of 250mA/W at 0.52μm and the peak value can even reach 102 mA/W at 0.7μm.
Received: 29 October 2004
Revised: 04 February 2005
Accepted manuscript online:
(Optoelectronic device characterization, design, and modeling)
Fund: Project supported by the National Natural Science Foundation of China (grant No 60376011) and Specialized Research Fund for the Doctoral Program of High Education (grant No 20040700001)
Cite this article:
Lü Zheng (吕政), Chen Zhi-Ming (陈治明), Pu Hong-Bin (蒲红斌) SiCGe/SiC heterojunction and its MEDICI simulation of optoelectronic characteristics 2005 Chinese Physics 14 1255
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