Rectifying characteristics and solar-blind photoresponse in β-Ga2O3/ZnO heterojunctions

doi:10.1088/1674-1056/28/8/088503

Abstract Heterojunctions composed of β-Ga₂O₃ and ZnO films are fabricated on sapphire substrates by using the laser molecular beam epitaxy method. The heterojunction possesses excellent rectifying characteristics with an asymmetry ratio over 10⁵. Prominent solar-blind photoresponse effect is also observed in the formed heterojunction. The photodetector exhibits a self-powered behavior with a fast response speed (rise time and decay time are 0.035 s and 0.032 s respectively) at zero bias. The obtained high performance can be related to the built-in field driven photogenerated electron-hole separation.

Keywords: Ga₂O₃ solar blind photodetector heterojunction self-powered

Received: 23 January 2019
Revised: 03 March 2019
Accepted manuscript online:

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	67.30.hr	(Films)
	71.20.Nr	(Semiconductor compounds)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51572033, 61774019, 61704153, and 11404029), the Fund from the State Key Laboratory of Information Photonics and Optical Communications (BUPT), China, and the Fundamental Research Funds for the Central Universities, China.

Corresponding Authors: Zhen-Ping Wu, Wei-Hua Tang
E-mail: zhenpingwu@bupt.edu.cn;whtang@bupt.edu.cn

Cite this article:

Xiao-Fei Ma(马晓菲), Yuan-Qi Huang(黄元琪), Yu-Song Zhi(支钰崧), Xia Wang(王霞), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), Wei-Hua Tang(唐为华) Rectifying characteristics and solar-blind photoresponse in β-Ga₂O₃/ZnO heterojunctions 2019 Chin. Phys. B 28 088503

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Rectifying characteristics and solar-blind photoresponse in β-Ga2O3/ZnO heterojunctions

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Rectifying characteristics and solar-blind photoresponse in β-Ga₂O₃/ZnO heterojunctions