| ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS |
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Band offsets and electronic properties of the Ga2O3/FTO heterojunction via transfer of free-standing Ga2O3 onto FTO/glass |
| Xia Wang(王霞)1,†, Wei-Fang Gu(古卫芳)1, Yong-Feng Qiao(乔永凤)1, Zhi-Yong Feng(冯志永)1, Yue-Hua An(安跃华)2, Shao-Hui Zhang(张少辉)3, and Zeng Liu(刘增)4,5 |
1 Department of Electrical Engineering and Automation, Shanxi Institute of Technology, Yangquan 045000, China;
2 School of Optoelectronic Engineering, Guangdong Polytechnic Normal University, Guangzhou 510665, China;
3 Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of;
2 D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;
4 College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
5 National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China |
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Abstract The determination of band offsets is crucial in the optimization of Ga2O3-based devices, since the band alignment types could determine the operations of devices due to the restriction of carrier transport across the heterogeneous interfaces. In this work, the band offsets of the Ga2O3/FTO heterojunction are studied using x-ray photoelectron spectroscopy (XPS) based on Kraut's method, which suggests a staggered type-Ⅱ alignment with a conduction band offset (ΔEC) of 1.66 eV and a valence band offset (ΔEV) of -2.41 eV. Furthermore, the electronic properties of the Ga2O3/FTO heterostructure are also measured, both in the dark and under ultraviolet (UV) illuminated conditions (254 nm UV light). Overall, this work can provide meaningful guidance for the design and construction of oxide hetero-structured devices based on wide-bandgap semiconducting Ga2O3.
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Received: 01 June 2021
Revised: 30 June 2021
Accepted manuscript online: 07 July 2021
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PACS:
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42.70.Nq
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(Other nonlinear optical materials; photorefractive and semiconductor materials)
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42.70.-a
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(Optical materials)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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| Fund: Project supported by the Fund of Shanxi Institute of Technology (Grant No. 2021QD-15), 2020 Excellent Doctoral Award Fund for working in Shanxi Province (Shanxi Institute of Technology), China (Grant No. 2021PT-09), and the National Natural Science Foundation of China (Grant No. 62004047). |
Corresponding Authors:
Xia Wang
E-mail: tianmingduwu@bupt.cn
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Cite this article:
Xia Wang(王霞), Wei-Fang Gu(古卫芳), Yong-Feng Qiao(乔永凤), Zhi-Yong Feng(冯志永), Yue-Hua An(安跃华), Shao-Hui Zhang(张少辉), and Zeng Liu(刘增) Band offsets and electronic properties of the Ga2O3/FTO heterojunction via transfer of free-standing Ga2O3 onto FTO/glass 2021 Chin. Phys. B 30 114211
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