Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric

doi:10.1088/1674-1056/27/7/078502

Abstract A Ge/Si heterojunction L-shaped tunnel field-effect transistor combined with hetero-gate-dielectric (GHL-TFET) is proposed and investigated by TCAD simulation. Current-voltage characteristics, energy-band diagrams, and the distribution of the band-to-band tunneling (BTBT) generation rate of GHL-TFET are analyzed. In addition, the effect of the vertical channel width on the ON-current is studied and the thickness of the gate dielectric is optimized for better suppression of ambipolar current. Moreover, analog/RF figure-of-merits of GHL-TFET are also investigated in terms of the cut-off frequency and gain bandwidth production. Simulation results indicate that the ON-current of GHL-TFET is increased by about three orders of magnitude compared with that of the conventional L-shaped TFET. Besides, the introduction of the hetero-gate-dielectric not only suppresses the ambipolar current effectively but also improves the analog/RF performance drastically. It is demonstrated that the maximum cut-off frequency of GHL-TFET is about 160 GHz, which is 20 times higher than that of the conventional L-shaped TFET.

Keywords: tunnel field-effect transistors Ge/Si heterojunction hetero-gate-dielectric ambipolar effect

Received: 02 February 2018
Revised: 18 April 2018
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)
	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

Corresponding Authors: Cong Li
E-mail: licong@xidian.edu.cn

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Cong Li(李聪), Zhi-Rui Yan(闫志蕊), Yi-Qi Zhuang(庄奕琪), Xiao-Long Zhao(赵小龙), Jia-Min Guo(郭嘉敏) Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric 2018 Chin. Phys. B 27 078502

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Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric

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