Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors

doi:10.1088/1674-1056/21/5/058501

Abstract A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors (DHBTs) based on hydrodynamic simulation is developed. The model is based on the hydrodynamic equation, which can accurately describe non-equilibrium conditions such as quasi-ballistic transport in the thin base and the velocity overshoot effect in the depleted collector. In addition, the model accounts for several physical effects such as bandgap narrowing, variable effective mass, and doping-dependent mobility at high fields. Good agreement between the measured and simulated values of cutoff frequency, f_t, and maximum oscillation frequency, f_max, are achieved for lateral and vertical device scalings. It is shown that the model in this paper is appropriate for downscaling and designing InGaAs/InP DHBTs.

Keywords: InGaAs/InP double heterojunction bipolar transistors hydrodynamic simulation lateral and vertical scalable model

Received: 06 October 2011
Revised: 27 April 2012
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	67.25.bf	(Transport, hydrodynamics)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2010CB327502).

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Ge Ji(葛霁), Liu Hong-Gang(刘洪刚), Su Yong-Bo(苏永波), Cao Yu-Xiong(曹玉雄), and Jin Zhi(金智) Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors 2012 Chin. Phys. B 21 058501

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Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors

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