The Sr content influence on the positive magnetoresistance in La1-xSrxMnO3/Si heterojunctions

doi:10.1088/1674-1056/19/8/087301

Abstract We fabricated La_1-xSr_xMnO₃/Si (LSMO/Si) heterojunctions with different Sr doping concentrations (x = 0.1, 0.2, 0.3) in LSMO and studied the Sr content influence on magnetoresistance (MR) ratio. The heterojunctions show positive MR and high sensitivity of MR ratio in a low applied magnetic field. The MR ratio is dependent on Sr content and the low Sr doping in LSMO causes a large positive MR in LSMO/Si junctions. The MR ratio for 0.1 Sr doping in the LSMO/Si heterostructure is 116% in 100 Oe (1 Oe=79.5775 A/m) at 210 K. The mechanism for the positive MR dependence on the doping density is considered to be the competition between the tunneling rate of electrons in e_g¹ ↑ to t_2g ↓ band and that to e_g² ↑ band at the interface region of LSMO. The experimental results are in agreement with those observed in La_0.9Sr_0.1MnO₃/SrNb_0.01Ti_0.99O₃ p-n junction. The results indicate that choosing low doping concentration to improve the low field sensitivity of the heterojunction deveces is a very efficacious method.

Keywords: heterojunctions magnetoresistance

Received: 21 April 2010
Revised: 12 May 2010
Accepted manuscript online:

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	61.72.S-	(Impurities in crystals)
	73.40.Gk	(Tunneling)
	73.50.Jt	(Galvanomagnetic and other magnetotransport effects)
	73.61.-r	(Electrical properties of specific thin films)
	75.70.Cn	(Magnetic properties of interfaces (multilayers, superlattices, heterostructures))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50672120).

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Yang Fang(杨芳), Jin Kui-Juan(金奎娟), Huang Yan Hong(黄延红), He Meng(何萌), LÜ Hui-Bin(吕惠宾), and Yang Guo-Zhen(杨国桢) The Sr content influence on the positive magnetoresistance in La_1-xSr_xMnO₃/Si heterojunctions 2010 Chin. Phys. B 19 087301

[1]	Obata T, Manako T, Shimakawa Y and Kubo Y 1999 Appl. Phys. Lett. 74 290
[2]	O'Donnell J, Andrus A E, Oh S, Colla E V and Eckstein J N 2000 Appl. Phys. Lett. 76 1914
[3]	Lang P L, Zhao Y G, Yang B, Zhang X L, Li J, Wang P and Zheng D N 2005 Appl. Phys. Lett. 87 053502
[4]	Murugavel P, Padhan P and Prellier W 2004 Appl. Phys. Lett. 85 4992
[5]	Ghosh K, Ogale S B, Pai S P, Robson M, Li E, Jin I, Dong Z W, Greene R L, Ramesh R, Venkatesan T and Johnson M 1998 Appl. Phys. Lett. 73 689
[6]	Sun J R, Xiong C M and Shen B G 2004 Appl. Phys. Lett. 85 4977
[7]	Vachhani P S, Markna J H and Kuberkar D G 2008 Appl. Phys. Lett. 92 043506
[8]	Mitra C, Raychaudhuri P, Dorr K, Muller K H, Schultz L, Oppeneer P M and Wirth S 2003 Phys. Rev. Lett. 90 17202
[9]	Lu H B, Dai S Y, Chen Z H, Zhou Y L, Cheng B L, Jin K J, Liu L F and Yang G Z 2005 Appl. Phys. Lett. 86 032502
[10]	Zhao K, Jin K J, Lu H B, He M, Huang Y H, Yang G Z and Zhang J 2008 Appl. Phys. Lett. 93 252110
[11]	Jin K J, Lu H B, Zhou Q L, Zhao K, Cheng B L, Chen Z H, Zhou Y L and Yang G Z 2005 Phys. Rev. B 71 184428
[12]	Sheng Z G, Sun Y P, Zhu X B, Zhao B C, Ang R, Song W H and Dai J M 2007 Solid State Commun. 141 239
[13]	Hu F X, Sun J R, Shen B G, Rong C B and Gao J 2008 J. Appl. Phys. 103 07F706
[14]	Cho Y S, H-Bo J S, Kim Y H, Park S I, Lee S W and Kim C S 2001 J. Magn. Magn. Mater. 226--230 754
[15]	Urushibara A, Moritomo Y, Arima T, Asamitsu A, Kido G and Tokura Y 1995 Phys. Rev. B 51 14103
[16]	Nojiri H, Kaneko K, Motokawa M, Hirota K, Endoh Y and Takahashi K 1999 Phys. Rev. B 60 4142
[17]	Moritomo Y, Asamitsu A and Tokura Y 1997 Phys. Rev. B 56 12190
[18]	Soltani M, Chaker M, Jiang X X, Nikanpour D and Margot J 2006 J. Vac. Sci. Technol. A 24 1518
[19]	He M, Qiu J, Liang X, Lu H B and Jin K J 2007 Appl. Sur. Sci. 253 6080
[20]	Yang G Z, Lu H B, Chen F, Zhao T and Chen Z H 2001 J. Crystal Growth 227--228 929
[21]	Lu H B, Jin K J, Huang Y H, He M, Zhao K, Cheng B L, Chen Z H, Zhou Y L, Dai S Y and Yang G Z 2005 Appl. Phys. Lett. 86 241915
[22]	Zhao K, Jin K J, Lu H B, Huang Y H, Zhou Q L, He M, Chen Z H, Zhou Y L and Yang G Z 2006 Appl. Phys. Lett. 88 141914
[23]	Xing J, Zhao K, Liu G Z, He M, Jin K J and Lu H B 2007 J. Phys. D: Appl. Phys. 40 5892
[24]	Qiu J, Jin K J, Han P, Lu H B, Hu C L, Wang B P and Yang G Z 2007 Europhys. Lett. 79 57004
[25]	Hu C L, Jin K J, Han P, Lu H B, Liao L and Yang G Z 2009 Solid State Commun. 149 334
[26]	Hu C L, Jin K J, Han P, Lu H B, Liao L and Yang G Z 2008 Appl. Phys. Lett. 93 162106
[27]	Zhou Q L, Jin K J, Zhao K, Guan D Y, Lu H B, Chen Z H and Yang G Z 2005 Phys. Rev. B 72 224439

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The Sr content influence on the positive magnetoresistance in La1-xSrxMnO3/Si heterojunctions

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The Sr content influence on the positive magnetoresistance in La_1-xSr_xMnO₃/Si heterojunctions