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Other articles related with "Schottky"：
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37101 |
Qian Liang(梁前), Xiangyan Luo(罗祥燕), Guolin Qian(钱国林), Yuanfan Wang(王远帆), Yongchao Liang(梁永超), and Quan Xie(谢泉) |
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Effects of vacancy and external electric field on the electronic properties of the MoSi2N4/graphene heterostructure |
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Chin. Phys. B
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128507 |
Qiming He(何启鸣), Weibing Hao(郝伟兵), Qiuyan Li(李秋艳), Zhao Han(韩照), Song He(贺松),Qi Liu(刘琦), Xuanze Zhou(周选择), Guangwei Xu(徐光伟), and Shibing Long(龙世兵) |
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β-Ga2O3 junction barrier Schottky diode with NiO p-well floating field rings |
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Chin. Phys. B
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[Abstract]
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98505 |
Jia-Hao Chen(陈嘉豪), Ying Wang(王颖), Xin-Xing Fei(费新星), Meng-Tian Bao(包梦恬), and Fei Cao(曹菲) |
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Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness |
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Chin. Phys. B
2023 Vol.32 (9): 98505-098505
[Abstract]
(141)
[HTML 0 KB]
[PDF 1681 KB]
(44)
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88101 |
Ying Zhu(朱盈), Wang Lin(林旺), Dong-Shuai Li(李东帅), Liu-An Li(李柳暗), Xian-Yi Lv(吕宪义), Qi-Liang Wang(王启亮), and Guang-Tian Zou(邹广田) |
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High performance trench diamond junction barrier Schottky diode with a sidewall-enhanced structure |
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Chin. Phys. B
2023 Vol.32 (8): 88101-088101
[Abstract]
(168)
[HTML 0 KB]
[PDF 1968 KB]
(120)
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68101 |
Ye Tu(涂野), Yong Li(李勇), and Guanchao Yin(殷官超) |
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Back interface passivation for ultrathin Cu(In,Ga)Se2 solar cells with Schottky back contact: A trade-off of electrical effects |
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Chin. Phys. B
2023 Vol.32 (6): 68101-068101
[Abstract]
(197)
[HTML 1 KB]
[PDF 896 KB]
(117)
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27302 |
Lijian Guo(郭力健), Weizong Xu(徐尉宗), Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海) |
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Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage |
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Chin. Phys. B
2023 Vol.32 (2): 27302-027302
[Abstract]
(273)
[HTML 0 KB]
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(187)
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17306 |
Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇) |
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Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure |
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Chin. Phys. B
2023 Vol.32 (1): 17306-017306
[Abstract]
(300)
[HTML 0 KB]
[PDF 1537 KB]
(126)
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17305 |
Xiaoyu Liu(刘晓宇), Yong Zhang(张勇), Haoran Wang(王皓冉), Haomiao Wei(魏浩淼),Jingtao Zhou(周静涛), Zhi Jin(金智), Yuehang Xu(徐跃杭), and Bo Yan(延波) |
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High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure |
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Chin. Phys. B
2023 Vol.32 (1): 17305-017305
[Abstract]
(294)
[HTML 0 KB]
[PDF 3641 KB]
(118)
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108105 |
Wang Lin(林旺), Ting-Ting Wang(王婷婷), Qi-Liang Wang(王启亮), Xian-Yi Lv(吕宪义), Gen-Zhuang Li(李根壮), Liu-An Li(李柳暗), Jin-Ping Ao(敖金平), and Guang-Tian Zou(邹广田) |
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Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction |
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Chin. Phys. B
2022 Vol.31 (10): 108105-108105
[Abstract]
(365)
[HTML 0 KB]
[PDF 1211 KB]
(120)
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87101 |
Qian Liang(梁前), Xiang-Yan Luo(罗祥燕), Yi-Xin Wang(王熠欣), Yong-Chao Liang(梁永超), and Quan Xie(谢泉) |
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Modulation of Schottky barrier in XSi2N4/graphene (X=Mo and W) heterojunctions by biaxial strain |
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Chin. Phys. B
2022 Vol.31 (8): 87101-087101
[Abstract]
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(117)
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57702 |
Qiliang Wang(王启亮), Tingting Wang(王婷婷), Taofei Pu(蒲涛飞), Shaoheng Cheng(成绍恒),Xiaobo Li(李小波), Liuan Li(李柳暗), and Jinping Ao(敖金平) |
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Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode |
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Chin. Phys. B
2022 Vol.31 (5): 57702-057702
[Abstract]
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47302 |
Pei-Pei Ma(马培培), Jun Zheng(郑军), Ya-Bao Zhang(张亚宝), Xiang-Quan Liu(刘香全), Zhi Liu(刘智), Yu-Hua Zuo(左玉华), Chun-Lai Xue(薛春来), and Bu-Wen Cheng(成步文) |
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Lateral β-Ga2O3 Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics |
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Chin. Phys. B
2022 Vol.31 (4): 47302-047302
[Abstract]
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47701 |
Ji-Yao Du(都继瑶), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), and Jin-Ping Ao(敖金平) |
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Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor |
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Chin. Phys. B
2022 Vol.31 (4): 47701-047701
[Abstract]
(395)
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[PDF 786 KB]
(116)
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28503 |
Wei-Zhong Chen(陈伟中), Hai-Feng Qin(秦海峰), Feng Xu(许峰), Li-Xiang Wang(王礼祥), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生) |
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A 4H-SiC merged P-I-N Schottky with floating back-to-back diode |
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Chin. Phys. B
2022 Vol.31 (2): 28503-028503
[Abstract]
(357)
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(178)
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126104 |
Haitao Zhou(周海涛), Lujia Cong(丛璐佳), Jiangang Ma(马剑钢), Bingsheng Li(李炳生), Haiyang Xu(徐海洋), and Yichun Liu(刘益春) |
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Suppression of persistent photoconductivity in high gain Ga2O3 Schottky photodetectors |
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Chin. Phys. B
2021 Vol.30 (12): 126104-126104
[Abstract]
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[PDF 1522 KB]
(201)
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117303 |
Qun-Si Yang(羊群思), Qing Liu(刘清), Dong Zhou(周东), Wei-Zong Xu(徐尉宗), Yi-Wang Wang(王宜望), Fang-Fang Ren(任芳芳), and Hai Lu(陆海) |
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Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template |
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Chin. Phys. B
2021 Vol.30 (11): 117303-117303
[Abstract]
(488)
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[PDF 997 KB]
(150)
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117102 |
Hai-Qing Xie(谢海情), Dan Wu(伍丹), Xiao-Qing Deng(邓小清), Zhi-Qiang Fan(范志强), Wu-Xing Zhou(周五星), Chang-Qing Xiang(向长青), and Yue-Yang Liu(刘岳阳) |
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Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application |
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Chin. Phys. B
2021 Vol.30 (11): 117102-117102
[Abstract]
(458)
[HTML 1 KB]
[PDF 3845 KB]
(160)
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96803 |
Jing-Cheng Wang(王旌丞), Hao Chen(陈浩), Lin-Feng Wan(万琳丰), Cao-Yuan Mu(牟草源), Yao-Feng Liu(刘尧峰), Shao-Heng Cheng(成绍恒), Qi-Liang Wang(王启亮), Liu-An Li(李柳暗), and Hong-Dong Li(李红东) |
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Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains |
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Chin. Phys. B
2021 Vol.30 (9): 96803-096803
[Abstract]
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[HTML 1 KB]
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67305 |
Chun-Xu Su(苏春旭), Wei Wen(温暐), Wu-Xiong Fei(费武雄), Wei Mao(毛维), Jia-Jie Chen(陈佳杰), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃) |
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Design and simulation of AlN-based vertical Schottky barrier diodes |
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Chin. Phys. B
2021 Vol.30 (6): 67305-067305
[Abstract]
(554)
[HTML 0 KB]
[PDF 879 KB]
(115)
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67302 |
Yang-Tong Yu(俞扬同), Xue-Qiang Xiang(向学强), Xuan-Ze Zhou(周选择), Kai Zhou(周凯), Guang-Wei Xu(徐光伟), Xiao-Long Zhao(赵晓龙), and Shi-Bing Long(龙世兵) |
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Device topological thermal management of β-Ga2O3 Schottky barrier diodes |
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Chin. Phys. B
2021 Vol.30 (6): 67302-067302
[Abstract]
(499)
[HTML 1 KB]
[PDF 1138 KB]
(241)
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68501 |
Yi-Di Pang(庞奕荻), En-Xiu Wu(武恩秀), Zhi-Hao Xu(徐志昊), Xiao-Dong Hu(胡晓东), Sen Wu(吴森), Lin-Yan Xu(徐临燕), and Jing Liu(刘晶) |
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Effect of electrical contact on performance of WSe2 field effect transistors |
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Chin. Phys. B
2021 Vol.30 (6): 68501-068501
[Abstract]
(530)
[HTML 0 KB]
[PDF 1079 KB]
(139)
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56110 |
Wen-Si Ai(艾文思), Jie Liu(刘杰), Qian Feng(冯倩), Peng-Fei Zhai(翟鹏飞), Pei-Pei Hu(胡培培), Jian Zeng(曾健), Sheng-Xia Zhang(张胜霞), Zong-Zhen Li(李宗臻), Li Liu(刘丽), Xiao-Yu Yan(闫晓宇), and You-Mei Sun(孙友梅) |
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Degradation of β-Ga2O3 Schottky barrier diode under swift heavy ion irradiation |
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Chin. Phys. B
2021 Vol.30 (5): 56110-056110
[Abstract]
(608)
[HTML 1 KB]
[PDF 1008 KB]
(194)
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38101 |
Da-Ping Liu(刘大平), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), Liu-An Li(李柳暗), Shao-Heng Cheng(成绍恒), and Qi-Liang Wang(王启亮) |
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Vertical GaN Shottky barrier diode with thermally stable TiN anode |
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Chin. Phys. B
2021 Vol.30 (3): 38101-
[Abstract]
(464)
[HTML 1 KB]
[PDF 1698 KB]
(116)
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37303 |
Zhiwei Huang(黄志伟), Shaoying Ke(柯少颖), Jinrong Zhou(周锦荣), Yimo Zhao(赵一默), Wei Huang(黄巍), Songyan Chen(陈松岩), and Cheng Li(李成) |
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High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode |
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Chin. Phys. B
2021 Vol.30 (3): 37303-
[Abstract]
(470)
[HTML 1 KB]
[PDF 2033 KB]
(161)
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27301 |
Tao Fang(房涛), Ling-Qi Li(李灵琪), Guang-Rui Xia(夏光睿), and Hong-Yu Yu(于洪宇) |
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Modeling, simulations, and optimizations of gallium oxide on gallium-nitride Schottky barrier diodes |
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Chin. Phys. B
2021 Vol.30 (2): 27301-0
[Abstract]
(859)
[HTML 1 KB]
[PDF 600 KB]
(412)
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17302 |
Xu-Long Chu(褚旭龙), Zeng Liu(刘增), Yu-Song Zhi(支钰崧), Yuan-Yuan Liu(刘媛媛), Shao-Hui Zhang(张少辉), Chao Wu(吴超), Ang Gao(高昂), Pei-Gang Li(李培刚), Dao-You Guo(郭道友), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华) |
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Self-powered solar-blind photodiodes based on EFG-grown (100)-dominant β-Ga2O3 substrate |
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Chin. Phys. B
2021 Vol.30 (1): 17302-
[Abstract]
(490)
[HTML 1 KB]
[PDF 1207 KB]
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18501 |
Zhi-Hang Tong(童志航), Peng Ding(丁芃), Yong-Bo Su(苏永波), Da-Hai Wang(王大海), and Zhi Jin(金智) |
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Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs |
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Chin. Phys. B
2021 Vol.30 (1): 18501-
[Abstract]
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[HTML 1 KB]
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104212 |
Lu-Wei Qi(祁路伟), Jin Meng(孟进), Xiao-Yu Liu(刘晓宇), Yi Weng(翁祎), Zhi-Cheng Liu(刘志成), De-Hai Zhang(张德海)†, Jing-Tao Zhou(周静涛)‡, and Zhi Jin(金智) |
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Optimization of terahertz monolithic integrated frequency multiplier based on trap-assisted physics model of THz Schottky barrier varactor |
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Chin. Phys. B
2020 Vol.29 (10): 104212-
[Abstract]
(482)
[HTML 1 KB]
[PDF 689 KB]
(127)
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98801 |
Brahim Ait Ali, Reda Moubah, Abdelkader Boulezhar, Hassan Lassri |
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Temperature-dependent barrier height inhomogeneities in PTB7:PC71BM-based organic solar cells |
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Chin. Phys. B
2020 Vol.29 (9): 98801-098801
[Abstract]
(492)
[HTML 0 KB]
[PDF 2363 KB]
(137)
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57306 |
Lu-Wei Qi(祁路伟), Xiao-Yu Liu(刘晓宇), Jin Meng(孟进), De-Hai Zhang(张德海), Jing-Tao Zhou(周静涛) |
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Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure |
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Chin. Phys. B
2020 Vol.29 (5): 57306-057306
[Abstract]
(607)
[HTML 1 KB]
[PDF 874 KB]
(122)
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47305 |
Wei-Fan Wang(王伟凡), Jian-Feng Wang(王建峰), Yu-Min Zhang(张育民), Teng-Kun Li(李腾坤), Rui Xiong(熊瑞), Ke Xu(徐科) |
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Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination |
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Chin. Phys. B
2020 Vol.29 (4): 47305-047305
[Abstract]
(726)
[HTML 1 KB]
[PDF 1329 KB]
(197)
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117303 |
Hao Yuan(袁昊), Qing-Wen Song(宋庆文), Chao Han(韩超), Xiao-Yan Tang(汤晓燕), Xiao-Ning He(何晓宁), Yu-Ming Zhang(张玉明), Yi-Men Zhang(张义门) |
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Hysteresis effect in current-voltage characteristics of Ni/n-type 4H-SiC Schottky structure |
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Chin. Phys. B
2019 Vol.28 (11): 117303-117303
[Abstract]
(711)
[HTML 1 KB]
[PDF 594 KB]
(146)
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87303 |
Zhi-Cheng Wang(王志成), Zhang-Zhang Cui(崔璋璋), Hui Xu(徐珲), Xiao-Fang Zhai(翟晓芳), Ya-Lin Lu(陆亚林) |
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Effects of oxygen vacancy concentration and temperature on memristive behavior of SrRuO3/Nb:SrTiO3 junctions |
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Chin. Phys. B
2019 Vol.28 (8): 87303-087303
[Abstract]
(661)
[HTML 1 KB]
[PDF 998 KB]
(192)
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38503 |
Yang Xu(徐阳), Xuanhu Chen(陈选虎), Liang Cheng(程亮), Fang-Fang Ren(任芳芳), Jianjun Zhou(周建军), Song Bai(柏松), Hai Lu(陆海), Shulin Gu(顾书林), Rong Zhang(张荣), Youdou Zheng(郑有炓), Jiandong Ye(叶建东) |
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High performance lateral Schottky diodes based on quasi-degenerated Ga2O3 |
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Chin. Phys. B
2019 Vol.28 (3): 38503-038503
[Abstract]
(781)
[HTML 1 KB]
[PDF 714 KB]
(331)
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27303 |
Jin-Lan Li(李金岚), Yun Li(李赟), Ling Wang(汪玲), Yue Xu(徐跃), Feng Yan(闫锋), Ping Han(韩平), Xiao-Li Ji(纪小丽) |
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Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode |
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Chin. Phys. B
2019 Vol.28 (2): 27303-027303
[Abstract]
(799)
[HTML 1 KB]
[PDF 929 KB]
(312)
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17105 |
Zeng Liu(刘增), Pei-Gang Li(李培刚), Yu-Song Zhi(支钰崧), Xiao-Long Wang(王小龙), Xu-Long Chu(褚旭龙), Wei-Hua Tang(唐为华) |
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Review of gallium oxide based field-effect transistors and Schottky barrier diodes |
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Chin. Phys. B
2019 Vol.28 (1): 17105-017105
[Abstract]
(926)
[HTML 1 KB]
[PDF 5647 KB]
(870)
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127302 |
Hui Wang(王辉), Ling-Li Jiang(蒋苓利), Xin-Peng Lin(林新鹏), Si-Qi Lei(雷思琦), Hong-Yu Yu(于洪宇) |
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A simulation study of field plate termination in Ga2O3 Schottky barrier diodes |
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Chin. Phys. B
2018 Vol.27 (12): 127302-127302
[Abstract]
(666)
[HTML 1 KB]
[PDF 650 KB]
(179)
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97305 |
Sheng-Xu Dong(董升旭), Yun Bai(白云), Yi-Dan Tang(汤益丹), Hong Chen(陈宏), Xiao-Li Tian(田晓丽), Cheng-Yue Yang(杨成樾), Xin-Yu Liu(刘新宇) |
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Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures |
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Chin. Phys. B
2018 Vol.27 (9): 97305-097305
[Abstract]
(704)
[HTML 1 KB]
[PDF 938 KB]
(250)
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97203 |
Yi-Dong Wang(王一栋), Jun Chen(陈俊) |
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Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode |
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Chin. Phys. B
2018 Vol.27 (9): 97203-097203
[Abstract]
(615)
[HTML 1 KB]
[PDF 1187 KB]
(187)
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87304 |
Xin Ye(叶鑫), Xiao-Chuan Xia(夏晓川), Hong-Wei Liang(梁红伟), Zhuo Li(李卓), He-Qiu Zhang(张贺秋), Guo-Tong Du(杜国同), Xing-Zhu Cui(崔兴柱), Xiao-Hua Liang(梁晓华) |
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Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection |
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Chin. Phys. B
2018 Vol.27 (8): 87304-087304
[Abstract]
(629)
[HTML 0 KB]
[PDF 735 KB]
(174)
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87102 |
Xue-Qian Zhong(仲雪倩), Jue Wang(王珏), Bao-Zhu Wang(王宝柱), Heng-Yu Wang(王珩宇), Qing Guo(郭清), Kuang Sheng(盛况) |
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Investigations on mesa width design for 4H-SiC trench super junction Schottky diodes |
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Chin. Phys. B
2018 Vol.27 (8): 87102-087102
[Abstract]
(886)
[HTML 0 KB]
[PDF 1573 KB]
(331)
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67202 |
Hao-Miao Yu(于浩淼), Yun He(何鋆) |
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How to characterize capacitance of organic optoelectronic devices accurately |
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Chin. Phys. B
2018 Vol.27 (6): 67202-067202
[Abstract]
(549)
[HTML 0 KB]
[PDF 630 KB]
(159)
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127101 |
Jun-Hui Lei(雷军辉), Xiu-Fen Wang(王秀峰), Jian-Guo Lin(林建国) |
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Tuning electronic properties of the S2/graphene heterojunction by strains from density functional theory |
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Chin. Phys. B
2017 Vol.26 (12): 127101-127101
[Abstract]
(598)
[HTML 0 KB]
[PDF 1950 KB]
(329)
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47306 |
Wei Mao(毛维), Hai-Yong Wang(王海永), Xiao-Fei Wang(王晓飞), Ming Du(杜鸣), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions |
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Chin. Phys. B
2017 Vol.26 (4): 47306-047306
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37306 |
Jie Huang(黄杰), Wenwen Gu(顾雯雯), Qian Zhao(赵倩) |
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Broadband microwave frequency doubler based on left-handed nonlinear transmission lines |
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Chin. Phys. B
2017 Vol.26 (3): 37306-037306
[Abstract]
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[PDF 853 KB]
(322)
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27105 |
Yong Lei(雷勇), Jing Su(苏静), Hong-Yan Wu(吴红艳), Cui-Hong Yang(杨翠红), Wei-Feng Rao(饶伟锋) |
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On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases |
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Chin. Phys. B
2017 Vol.26 (2): 27105-027105
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(416)
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47102 |
Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Hao Yuan(袁昊), Yue-Hu Wang(王悦湖), Yi-Meng Zhang(张艺蒙), Hui Guo(郭辉), Ren-Xu Jia(贾仁需), Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明) |
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Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs |
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Chin. Phys. B
2016 Vol.25 (4): 47102-047102
[Abstract]
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[PDF 5205 KB]
(343)
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27304 |
Gui-fang Li(李桂芳), Jing Hu(胡晶), Hui Lv(吕辉), Zhijun Cui(崔智军), Xiaowei Hou(候晓伟), Shibin Liu(刘诗斌), Yongqian Du(杜永乾) |
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Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction |
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Chin. Phys. B
2016 Vol.25 (2): 27304-027304
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(510)
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17201 |
X Z Liu(刘兴钊), C Yue(岳超), C T Xia(夏长泰), W L Zhang(张万里) |
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Characterization of vertical Au/β -Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer |
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Chin. Phys. B
2016 Vol.25 (1): 17201-017201
[Abstract]
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[PDF 287 KB]
(826)
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107307 |
Wang Shuan-Hu (王拴虎), Zhang Xu (张勖), Zou Lv-Kuan (邹吕宽), Zhao Jing (赵靓), Wang Wen-Xin (王文鑫), Sun Ji-Rong (孙继荣) |
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Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction |
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Chin. Phys. B
2015 Vol.24 (10): 107307-107307
[Abstract]
(586)
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[PDF 580 KB]
(283)
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107302 |
Hu Zuo-Fu (胡佐富), Wu Huai-Hao (吴怀昊), Lv Yan-Wu (吕燕伍), Zhang Xi-Qing (张希清) |
| |
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High response Schottky ultraviolet photodetector formed by PEDOT:PSS transparent electrode contacts to Mg0.1Zn0.9O |
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Chin. Phys. B
2015 Vol.24 (10): 107302-107302
[Abstract]
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[PDF 403 KB]
(480)
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97202 |
Ma Li (马莉), Shen Guang-Di (沈光地), Gao Zhi-Yuan (高志远), Xu Chen (徐晨) |
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Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers |
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Chin. Phys. B
2015 Vol.24 (9): 97202-097202
[Abstract]
(790)
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[PDF 414 KB]
(349)
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97303 |
Zhong Jian (钟健), Yao Yao (姚尧), Zheng Yue (郑越), Yang Fan (杨帆), Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Shen Zhen (沈震), Zhou Gui-Lin (周桂林), Zhou De-Qiu (周德秋), Wu Zhi-Sheng (吴志盛), Zhang Bai-Jun (张伯君), Liu Yang (刘扬) |
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Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode |
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Chin. Phys. B
2015 Vol.24 (9): 97303-097303
[Abstract]
(988)
[HTML 1 KB]
[PDF 601 KB]
(569)
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77306 |
Wei Jiang-Bin (魏江镔), Chi Xiao-Wei (池晓伟), Lu Chao (陆超), Wang Chen (王尘), Lin Guang-Yang (林光杨), Wu Huan-Da (吴焕达), Huang Wei (黄巍), Li Cheng (李成), Chen Song-Yan (陈松岩), Liu Chun-Li (刘春莉) |
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Modulation of WNx/Ge Schottky barrier height by varying N composition of tungsten nitride |
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Chin. Phys. B
2015 Vol.24 (7): 77306-077306
[Abstract]
(728)
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[PDF 340 KB]
(371)
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77305 |
Wang Hao (王昊), Chen Xing (陈星), Xu Guang-Hui (许光辉), Huang Ka-Ma (黄卡玛) |
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A novel physical parameter extraction approach for Schottky diodes |
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Chin. Phys. B
2015 Vol.24 (7): 77305-077305
[Abstract]
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[HTML 1 KB]
[PDF 378 KB]
(606)
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77201 |
Zhai Dong-Yuan (翟东媛), Zhu Jun (朱俊), Zhao Yi (赵毅), Cai Yin-Fei (蔡银飞), Shi Yi (施毅), Zheng You-Liao (郑有炓) |
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High performance trench MOS barrier Schottky diode with high-k gate oxide |
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Chin. Phys. B
2015 Vol.24 (7): 77201-077201
[Abstract]
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[PDF 523 KB]
(1177)
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27801 |
Zheng Yan-Qiong (郑燕琼), William J. Potscavage Jr, Zhang Jian-Hua (张建华), Wei Bin (魏斌), Huang Rong-Juan (黄荣娟) |
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Hole transporting material 5, 10, 15-tribenzyl-5H-diindolo[3, 2-a:3',2'-c]-carbazole for efficient optoelectronic applications as an active layer |
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Chin. Phys. B
2015 Vol.24 (2): 27801-027801
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(590)
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117306 |
E. Yağlıoğlu, Ö. Tüzün Özmen |
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F4-TCNQ concentration dependence of the current–voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode |
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Chin. Phys. B
2014 Vol.23 (11): 117306-117306
[Abstract]
(605)
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[PDF 367 KB]
(617)
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127302 |
Han Lin-Chao (韩林超), Shen Hua-Jun (申华军), Liu Ke-An (刘可安), Wang Yi-Yu (王弋宇), Tang Yi-Dan (汤益丹), Bai Yun (白云), Xu Heng-Yu (许恒宇), Wu Yu-Dong (吴煜东), Liu Xin-Yu (刘新宇) |
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Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H–SiC contacts |
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Chin. Phys. B
2014 Vol.23 (12): 127302-127302
[Abstract]
(592)
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[PDF 461 KB]
(498)
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126101 |
M. Ismail, M. W. Abbas, A. M. Rana, I. Talib, E. Ahmed, M. Y. Nadeem, T. L. Tsai, U. Chand, N. A. Shah, M. Hussain, A. Aziz, M. T. Bhatti |
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Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device |
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Chin. Phys. B
2014 Vol.23 (12): 126101-126101
[Abstract]
(562)
[HTML 1 KB]
[PDF 743 KB]
(393)
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107303 |
Zhao Sheng-Lei (赵胜雷), Mi Min-Han (宓珉瀚), Hou Bin (侯斌), Luo Jun (罗俊), Wang Yi (王毅), Dai Yang (戴杨), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
| |
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Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain |
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Chin. Phys. B
2014 Vol.23 (10): 107303-107303
[Abstract]
(526)
[HTML 1 KB]
[PDF 1455 KB]
(879)
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97307 |
Wu Mei (武玫), Zheng Da-Yong (郑大勇), Wang Yuan (王媛), Chen Wei-Wei (陈伟伟), Zhang Kai (张凯), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
| |
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Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range |
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Chin. Phys. B
2014 Vol.23 (9): 97307-097307
[Abstract]
(751)
[HTML 1 KB]
[PDF 315 KB]
(1552)
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97305 |
Zhao Sheng-Lei (赵胜雷), Wang Yuan (王媛), Yang Xiao-Lei (杨晓蕾), Lin Zhi-Yu (林志宇), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
| |
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Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors |
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Chin. Phys. B
2014 Vol.23 (9): 97305-097305
[Abstract]
(635)
[HTML 1 KB]
[PDF 1027 KB]
(907)
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97308 |
Jiang Chao (蒋超), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Dou (郑有炓) |
| |
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Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate |
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Chin. Phys. B
2014 Vol.23 (9): 97308-097308
[Abstract]
(790)
[HTML 1 KB]
[PDF 1081 KB]
(776)
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77303 |
Feng Qian (冯倩), Du Kai (杜锴), Li Yu-Kun (李宇坤), Shi Peng (时鹏), Feng Qing (冯庆) |
| |
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Effect of annealing on performance of PEDOT：PSS/n-GaN Schottky solar cells |
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Chin. Phys. B
2014 Vol.23 (7): 77303-077303
[Abstract]
(648)
[HTML 1 KB]
[PDF 967 KB]
(845)
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57102 |
Yuan Hao (袁昊), Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Song Qing-Wen (宋庆文), Yang Fei (杨霏), Wu Hao (吴昊) |
| |
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4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination |
| |
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Chin. Phys. B
2014 Vol.23 (5): 57102-057102
[Abstract]
(671)
[HTML 1 KB]
[PDF 437 KB]
(590)
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57203 |
Wang Xiang-Dong (王向东), Deng Xiao-Chuan (邓小川), Wang Yong-Wei (王永维), Wang Yong (王勇), Wen Yi (文译), Zhang Bo (张波) |
| |
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Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring |
| |
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Chin. Phys. B
2014 Vol.23 (5): 57203-057203
[Abstract]
(714)
[HTML 1 KB]
[PDF 498 KB]
(572)
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57504 |
A. Tataroğlu, A. A. Hendi, R. H. Alorainy, F. Yakuphanoğlu |
| |
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A new aluminum iron oxide Schottky photodiode designed via sol-gel coating method |
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Chin. Phys. B
2014 Vol.23 (5): 57504-057504
[Abstract]
(688)
[HTML 1 KB]
[PDF 719 KB]
(780)
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17702 |
Chen Feng (陈峰), Wu Wen-Bin (吴文彬), Li Shun-Yi (李舜怡), Andreas Klein |
| |
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Energy band alignment at ferroelectric/electrode interface determined by photoelectron spectroscopy |
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Chin. Phys. B
2014 Vol.23 (1): 17702-017702
[Abstract]
(504)
[HTML 1 KB]
[PDF 3124 KB]
(1716)
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27101 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Lin Zhao-Jun (林兆军), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Cai Shu-Jun (蔡树军) |
| |
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Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes |
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Chin. Phys. B
2014 Vol.23 (2): 27101-027101
[Abstract]
(713)
[HTML 1 KB]
[PDF 268 KB]
(739)
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27102 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Wang Yuan-Gang (王元刚), Xu Peng (徐鹏), Han Ting-Ting (韩婷婷), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军), Luan Chong-Biao (栾崇彪), Lin Zhao-Jun (林兆军) |
| |
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Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes |
| |
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Chin. Phys. B
2014 Vol.23 (2): 27102-027102
[Abstract]
(571)
[HTML 1 KB]
[PDF 281 KB]
(531)
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18506 |
Ahmet Kaya, Sedat Zeyrek, Sait Eren San, Şmsettin Altindal |
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Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range |
| |
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Chin. Phys. B
2014 Vol.23 (1): 18506-018506
[Abstract]
(580)
[HTML 1 KB]
[PDF 1510 KB]
(499)
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127307 |
Huang Jie (黄杰), Zhao Qian (赵倩), Yang Hao (杨浩), Dong Jun-Rong (董军荣), Zhang Hai-Ying (张海英) |
| |
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A monolithic distributed phase shifter based on right-handed nonlinear transmission lines at 30 GHz |
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Chin. Phys. B
2013 Vol.22 (12): 127307-127307
[Abstract]
(584)
[HTML 1 KB]
[PDF 406 KB]
(512)
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98502 |
Zahra Ahangari, Morteza Fathipour |
| |
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Tight-binding study of quantum transport in nanoscale GaAs Schottky MOSFET |
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Chin. Phys. B
2013 Vol.22 (9): 98502-098502
[Abstract]
(639)
[HTML 1 KB]
[PDF 838 KB]
(639)
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97302 |
Zheng Liu (郑柳), Zhang Feng (张峰), Liu Sheng-Bei (刘胜北), Dong Lin (董林), Liu Xing-Fang (刘兴昉), Fan Zhong-Chao (樊中朝), Liu Bin (刘斌), Yan Guo-Guo (闫果果), Wang Lei (王雷), Zhao Wan-Shun (赵万顺), Sun Guo-Sheng (孙国胜), He Zhi (何志), Yang Fu-Hua (杨富华) |
| |
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High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions |
| |
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Chin. Phys. B
2013 Vol.22 (9): 97302-097302
[Abstract]
(865)
[HTML 1 KB]
[PDF 1022 KB]
(934)
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77102 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Sheng Bai-Cheng (盛百城), Cai Shu-Jun (蔡树军), Liu Bo (刘波), Lin Zhao-Jun (林兆军) |
| |
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Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode |
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Chin. Phys. B
2013 Vol.22 (7): 77102-077102
[Abstract]
(864)
[HTML 1 KB]
[PDF 270 KB]
(1492)
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47102 |
Cao Zhi-Fang (曹芝芳), Lin Zhao-Jun (林兆军), Lü Yuan-Jie (吕元杰), Luan Chong-Biao (栾崇彪), Wang Zhan-Guo (王占国) |
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Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2013 Vol.22 (4): 47102-047102
[Abstract]
(692)
[HTML 1 KB]
[PDF 344 KB]
(496)
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128503 |
Wang Ying (王颖), Li Ting (李婷), Cao Fei (曹菲), Shao Lei (邵雷), Chen Yu-Xian (陈宇贤) |
| |
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Junction barrier Schottky rectifier with improved P-well region |
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Chin. Phys. B
2012 Vol.21 (12): 128503-128503
[Abstract]
(1101)
[HTML 1 KB]
[PDF 359 KB]
(798)
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97201 |
Cheng Peng-Fei (成鹏飞), Li Sheng-Tao (李盛涛), Li Jian-Ying (李建英), Ding Can (丁璨), Yang Yan (杨雁) |
| |
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Physical meaning of conductivity spectra for ZnO ceramics |
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Chin. Phys. B
2012 Vol.21 (9): 97201-097201
[Abstract]
(1484)
[HTML 1 KB]
[PDF 183 KB]
(643)
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67303 |
Dong Jun-Rong(董军荣), Yang Hao(杨浩), Tian Chao(田超), Huang Jie(黄杰), and Zhang Hai-Ying(张海英) |
| |
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A GaAs planar Schottky varactor diode for left-handed nonlinear transmission line applications |
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Chin. Phys. B
2012 Vol.21 (6): 67303-067303
[Abstract]
(1507)
[HTML 1 KB]
[PDF 632 KB]
(847)
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56104 |
Wang Ying(王颖), Jiao Wen-Li(焦文利), Hu Hai-Fan (胡海帆), Liu Yun-Tao(刘云涛), and Cao Fei(曹菲) |
| |
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A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier |
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Chin. Phys. B
2012 Vol.21 (5): 56104-056104
[Abstract]
(1534)
[HTML 1 KB]
[PDF 216 KB]
(582)
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37304 |
Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Tang Xiao-Yan(汤晓燕), Wang Yue-Hu(王悦湖), and Chen Wen-Hao(陈文豪) |
| |
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Temperature-dependent characteristics of 4H–SiC junction barrier Schottky diodes |
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Chin. Phys. B
2012 Vol.21 (3): 37304-037304
[Abstract]
(1337)
[HTML 1 KB]
[PDF 301 KB]
(1912)
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47302 |
Liu Zi-Yu(刘紫玉), Zhang Pei-Jian(张培健), Meng Yang(孟洋), Li Dong(李栋), Meng Qing-Yu(孟庆宇), Li Jian-Qi(李建奇), and Zhao Hong-Wu(赵宏武) |
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The influence of interfacial barrier engineering on the resistance switching of In2O3:SnO2/TiO2/In2O3:SnO2 device |
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Chin. Phys. B
2012 Vol.21 (4): 47302-047302
[Abstract]
(1189)
[HTML 1 KB]
[PDF 228 KB]
(903)
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17303 |
Cao Lin(曹琳), Pu Hong-Bin(蒲红斌), Chen Zhi-Ming(陈治明), and Zang Yuan(臧源) |
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Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery |
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Chin. Phys. B
2012 Vol.21 (1): 17303-017303
[Abstract]
(1335)
[HTML 1 KB]
[PDF 260 KB]
(918)
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17103 |
Cao Zhi-Fang(曹芝芳), Lin Zhao-Jun(林兆军), LŰ Yuan-Jie(吕元杰), Luan Chong-Biao(栾崇彪), Yu Ying-Xia(于英霞), Chen Hong(陈弘), and Wang Zhan-Guo(王占国) |
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Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes |
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Chin. Phys. B
2012 Vol.21 (1): 17103-017103
[Abstract]
(1396)
[HTML 1 KB]
[PDF 247 KB]
(1189)
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87305 |
Wang Yue-Hu(王悦湖), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Song Qing-Wen(宋庆文), and Jia Ren-Xu(贾仁需) |
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Al/Ti/4H–SiC Schottky barrier diodes with inhomogeneous barrier heights |
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Chin. Phys. B
2011 Vol.20 (8): 87305-087305
[Abstract]
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[HTML 1 KB]
[PDF 164 KB]
(1316)
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87304 |
Li Wei-Yi(李惟一), Ru Guo-Ping(茹国平), Jiang Yu-Long(蒋玉龙), and Ruan Gang(阮刚) |
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Trapezoid mesa trench metal–oxide semiconductor barrier Schottky rectifier: an improved Schottky rectifier with better reverse characteristics |
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Chin. Phys. B
2011 Vol.20 (8): 87304-087304
[Abstract]
(1507)
[HTML 0 KB]
[PDF 7700 KB]
(2434)
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67303 |
Liu Fang(刘芳), Qin Zhi-Xin(秦志新), Xu Fu-Jun(许福军), Zhao Sheng(赵胜), Kang Xiang-Ning(康香宁), Shen Bo(沈波), and Zhang Guo-Yi(张国义) |
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Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN |
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Chin. Phys. B
2011 Vol.20 (6): 67303-067303
[Abstract]
(1652)
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[PDF 279 KB]
(1870)
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60702 |
Huang Jie(黄杰), Dong Jun-Rong(董军荣), Yang Hao(杨浩), Zhang Hai-Ying(张海英), Tian Chao(田超), and Guo Tian-Yi(郭天义) |
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A k-band broadband monolithic distributed frequency multiplier based on nonlinear transmission line |
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Chin. Phys. B
2011 Vol.20 (6): 60702-060702
[Abstract]
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(1597)
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47301 |
Zhu Ya-Bin(朱亚彬), Hu Wei(胡伟), Na Jie(纳杰), He Fan(何帆), Zhou Yue-Liang(周岳亮), and Chen Cong(陈聪) |
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PEDOT:PSS Schottky contacts on annealed ZnO films |
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Chin. Phys. B
2011 Vol.20 (4): 47301-047301
[Abstract]
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[PDF 3235 KB]
(2281)
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27305 |
Luan Su-Zhen(栾苏珍) and Liu Hong-Xia(刘红侠) vgluept |
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Erratum to "Quantum compact model for thin-body double-gate Schottky barrier MOSFETs" |
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Chin. Phys. B
2011 Vol.20 (2): 27305-027305
[Abstract]
(1575)
[HTML 1 KB]
[PDF 73 KB]
(506)
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118401 |
Huang Jian-Hua(黄健华), Lü Hong-Liang(吕红亮), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门),Tang Xiao-Yan(汤晓燕), Chen Feng-Ping(陈丰平), and Song Qing-Wen(宋庆文) |
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Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode |
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Chin. Phys. B
2011 Vol.20 (11): 118401-118401
[Abstract]
(1513)
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[PDF 304 KB]
(1073)
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117301 |
Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Tang Xiao-Yan(汤晓燕), Wang Yue-Hu(王悦湖), and Chen Wen-Hao(陈文豪) |
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Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode |
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Chin. Phys. B
2011 Vol.20 (11): 117301-117301
[Abstract]
(1892)
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[PDF 413 KB]
(2923)
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97304 |
Ru Guo-Ping(茹国平), Yu Rong(俞融), Jiang Yu-Long(蒋玉龙), and Ruan Gang(阮刚) |
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Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height |
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Chin. Phys. B
2010 Vol.19 (9): 97304-097304
[Abstract]
(1471)
[HTML 1 KB]
[PDF 331 KB]
(808)
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97107 |
Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Lü Hong-Liang(吕红亮), Zhang Yi-Men(张义门), and Huang Jian-Hua(黄建华) |
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Study of 4H-SiC junction barrier Schottky diode using field guard ring termination |
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Chin. Phys. B
2010 Vol.19 (9): 97107-097107
[Abstract]
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[HTML 1 KB]
[PDF 2572 KB]
(2366)
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87202 |
Song Qing-Wen(宋庆文), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), and LÜ Hong-Liang(吕红亮) |
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Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region |
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Chin. Phys. B
2010 Vol.19 (8): 87202-087202
[Abstract]
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[HTML 0 KB]
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(900)
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57802 |
Zhao De-Gang(赵德刚), Zhang Shuang(张爽), Liu Wen-Bao(刘文宝), Hao Xiao-Peng(郝小鹏), Jiang De-Sheng(江德生), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Wang Hui(王辉), Zhang Shu-Ming(张书明), Yang Hui(杨辉), and Wei Long(魏龙) |
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Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors |
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Chin. Phys. B
2010 Vol.19 (5): 57802-057802
[Abstract]
(1313)
[HTML 1 KB]
[PDF 327 KB]
(927)
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57303 |
Liu Hong-Xia(刘红侠), Wu Xiao-Feng(吴笑峰), Hu Shi-Gang(胡仕刚), and Shi Li-Chun(石立春) |
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Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures |
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Chin. Phys. B
2010 Vol.19 (5): 57303-057303
[Abstract]
(1403)
[HTML 1 KB]
[PDF 735 KB]
(741)
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47305 |
Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), LÜ Hong-Liang(吕红亮), and Song Qing-Wen(宋庆文) |
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Simulation research on offset field-plate used as edge termination in 4H－SiC merged PiN-Schottky diodes |
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Chin. Phys. B
2010 Vol.19 (4): 47305-047305
[Abstract]
(1487)
[HTML 1 KB]
[PDF 342 KB]
(996)
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47201 |
Song Qing-Wen(宋庆文), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), Guo Hui(郭辉), Li Zhi-Yun(李志云), and Wang Zhong-Xu(王中旭) |
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Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension |
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Chin. Phys. B
2010 Vol.19 (4): 47201-047201
[Abstract]
(1515)
[HTML 1 KB]
[PDF 298 KB]
(706)
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107304 |
Nan Ya-Gong(南雅公), Pu Hong-Bin(蒲红斌), Cao Lin(曹琳), and Ren Jie(任杰) |
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Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties |
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Chin. Phys. B
2010 Vol.19 (10): 107304-107304
[Abstract]
(1462)
[HTML 1 KB]
[PDF 532 KB]
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107207 |
M. A. Yeganeh,Sh. Rahmatallahpur, A. Nozad, and R. K. Mamedov |
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Effect of diode size and series resistance on barrier height and ideality factor in nearly ideal Au/n type-GaAs micro Schottky contact diodes |
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Chin. Phys. B
2010 Vol.19 (10): 107207-107207
[Abstract]
(1725)
[HTML 1 KB]
[PDF 3060 KB]
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107101 |
Pu Hong-Bin(蒲红斌), Cao Lin(曹琳), Chen Zhi-Ming(陈治明), Ren Jie(仁杰), and Nan Ya-Gong(南雅公) |
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Modeling of 4H–SiC multi-floating-junction Schottky barrier diode |
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Chin. Phys. B
2010 Vol.19 (10): 107101-107101
[Abstract]
(1627)
[HTML 1 KB]
[PDF 280 KB]
(844)
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17203 |
Wang Shou-Guo(王守国), Zhang Yan(张岩), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) |
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Characterization of ion-implanted 4H-SiC Schottky barrier diodes |
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Chin. Phys. B
2010 Vol.19 (1): 17203-017203
[Abstract]
(1417)
[HTML 1 KB]
[PDF 344 KB]
(973)
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3490 |
Zhang Lin(张林), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Han Chao(韩超), and Ma Yong-Ji(马永吉) |
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High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact |
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Chin. Phys. B
2009 Vol.18 (8): 3490-3494
[Abstract]
(1626)
[HTML 1 KB]
[PDF 1316 KB]
(1049)
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1931 |
Zhang Lin(张林), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Han Chao(韩超), and Ma Yong-Ji(马永吉) |
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High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diode at room temperature |
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Chin. Phys. B
2009 Vol.18 (5): 1931-1934
[Abstract]
(1478)
[HTML 1 KB]
[PDF 287 KB]
(704)
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1618 |
Liu Fang(刘芳), Wang Tao(王涛), Shen Bo(沈波), Huang Sen(黄森), Lin Fang(林芳), Ma Nan(马楠), Xu Fu-Jun(许福军), Wang Peng(王鹏), and Yao Jian-Quan(姚建铨) |
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Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts |
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Chin. Phys. B
2009 Vol.18 (4): 1618-1621
[Abstract]
(1627)
[HTML 1 KB]
[PDF 334 KB]
(780)
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5474 |
Song Qing-Wen(宋庆文),Zhang Yu-Ming(张玉明),Zhang Yi-Men(张义门), ü Hong-Liang(吕红亮),Chen Feng-Ping(陈丰平), and Zheng Qing-Li(郑庆立) |
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Analytical model for reverse characteristics of 4H--SiC merged PN--Schottky (MPS) diodes |
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Chin. Phys. B
2009 Vol.18 (12): 5474-5478
[Abstract]
(1652)
[HTML 1 KB]
[PDF 134 KB]
(978)
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5029 |
Li Fei(李菲), Zhang Xiao-Ling(张小玲), Duan Yi(段毅), Xie Xue-Song(谢雪松), and ü Chang-Zhi(吕长志) |
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High-temperature current conduction through three kinds of Schottky diodes |
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Chin. Phys. B
2009 Vol.18 (11): 5029-5033
[Abstract]
(1649)
[HTML 1 KB]
[PDF 712 KB]
(730)
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4465 |
An Xia(安霞), Fan Chun-Hui(范春晖), Huang Ru(黄如), Guo Yue(郭岳), Xu Cong(徐聪), Zhang Xing(张兴), and Wang Yang-Yuan(王阳元) |
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The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique |
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Chin. Phys. B
2009 Vol.18 (10): 4465-4469
[Abstract]
(1740)
[HTML 1 KB]
[PDF 5296 KB]
(831)
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3077 |
Luan Su-Zhen(栾苏珍) and Liu Hong-Xia(刘红侠) |
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Quantum compact model for thin-body double-gate Schottky barrier MOSFETs |
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Chin. Phys. B
2008 Vol.17 (8): 3077-3082
[Abstract]
(1436)
[HTML 1 KB]
[PDF 782 KB]
(453)
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2707 |
Long Yun-Ze(龙云泽), Yin Zhi-Hua(尹志华), Hui Wen(惠雯), Chen Zhao-Jia(陈兆甲), and Wan Mei-Xiang(万梅香) |
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Rectifying effect of heterojunctions between metals and doped conducting polymer nanostructure pellets |
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Chin. Phys. B
2008 Vol.17 (7): 2707-2711
[Abstract]
(1432)
[HTML 1 KB]
[PDF 1696 KB]
(917)
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3875 |
Wang Ding-Qu(王鼎渠), Zhou Zhao-Ying(周兆英), Zhu Rong(朱荣), and Ye Xiong-Ying(叶雄英) |
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Electrical characteristics and optoelectronic properties of metal--semiconductor--metal structure with zinc oxide nanowires across Au electrodes |
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Chin. Phys. B
2008 Vol.17 (10): 3875-3879
[Abstract]
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[HTML 0 KB]
[PDF 930 KB]
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240 |
Li Ding-Yu(李定宇), Sun Lei(孙雷), Zhang Sheng-Dong (张盛东), Wang Yi(王漪), Liu Xiao-Yan(刘晓彦), and Han Ru-Qi(韩汝琦) |
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Schottky barrier MOSFET structure with silicide source/drain on buried metal |
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Chin. Phys. B
2007 Vol.16 (1): 240-244
[Abstract]
(1937)
[HTML 1 KB]
[PDF 387 KB]
(637)
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1325 |
He Zheng (何政), Kang Yong (亢勇), Tang Ying-Wen (汤英文), Li Xue (李雪), Fang Jia-Xiong (方家熊) |
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Study on the spectral response of the Schottky photodetector of GaN |
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Chin. Phys. B
2006 Vol.15 (6): 1325-1329
[Abstract]
(1664)
[HTML 1 KB]
[PDF 232 KB]
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1639 |
Zhu Shi-Yang (竺士炀), Ru Guo-Ping (茹国平), Zhou Jia (周嘉), Huang Yi-Ping (黄宜平) |
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I-V-T studies on Ni-silicide/n-Si(100) contacts formed by Ti-Ni-Si solid state reaction |
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Chin. Phys. B
2005 Vol.14 (8): 1639-1643
[Abstract]
(1228)
[HTML 1 KB]
[PDF 289 KB]
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1041 |
Han De-Dong (韩德栋), Liu Xiao-Yan (刘晓彦), Kang Jin-Feng (康晋锋), Xia Zhi-Liang (夏志良), Du Gang (杜刚), Han Ru-Qi (韩汝琦) |
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Fabrication and characteristics of Ni-germanide Schottky contacts with Ge |
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Chin. Phys. B
2005 Vol.14 (5): 1041-1043
[Abstract]
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[HTML 1 KB]
[PDF 239 KB]
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1110 |
Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Gao Jin-Xia (郜锦侠) |
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Analysis of the effect of sidewall on the performance of 6H-SiC Schottky barrier source/drain NMOSFETs |
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Chin. Phys. B
2004 Vol.13 (7): 1110-1113
[Abstract]
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[HTML 0 KB]
[PDF 190 KB]
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322 |
Wang Shou-Guo (王守国), Yang Lin-An (杨林安), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Zhang Zhi-Yong (张志勇), Yan Jun-Feng (闫军锋) |
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Fabrication and characteristics of lateral Ti/4H-SiC Schottky barrier diodes |
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Chin. Phys. B
2003 Vol.12 (3): 322-324
[Abstract]
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[HTML 1 KB]
[PDF 205 KB]
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94 |
Wang Shou-Guo (王守国), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) |
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Parameter extraction for a Ti/4H-SiC Schottky diode |
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Chin. Phys. B
2003 Vol.12 (1): 94-96
[Abstract]
(1523)
[HTML 1 KB]
[PDF 216 KB]
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156 |
Zhu Shi-Yang (竺士炀), Ru Guo-Ping (茹国平), Qu Xin-Ping (屈新萍), Li Bing-Zong (李炳宗), R.L.Van Meirhaeghe, C.Detavernier, F.Cardon |
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Double threshold behaviour of I--V characteristics of CoSi2/Si Schottky contacts |
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Chin. Phys. B
2002 Vol.11 (2): 156-162
[Abstract]
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[HTML 1 KB]
[PDF 297 KB]
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