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Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H–SiC contacts |
Han Lin-Chao (韩林超)a, Shen Hua-Jun (申华军)a, Liu Ke-An (刘可安)b, Wang Yi-Yu (王弋宇)a, Tang Yi-Dan (汤益丹)a, Bai Yun (白云)a, Xu Heng-Yu (许恒宇)a, Wu Yu-Dong (吴煜东)b, Liu Xin-Yu (刘新宇)a |
a Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; b Zhuzhou CSR Times Electric Co., Ltd, Zhuzhou 412001, China |
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Abstract Tung's model was used to analyze anomalies observed in Ti/SiC Schottky contacts. The degree of the inhomogeneous Schottky barrier after annealing at different temperatures is characterized by the 'T0 anomaly' and the difference (ΔФ) between the uniformly high barrier height (ФB0) and the effective barrier height (ФBeff). Those two parameters of Ti Schottky contacts on 4H–SiC were deduced from I–V measurements in the temperature range of 298 K–503 K. The increase in Schottky barrier (SB) height (ФB) and decrease in the ideality factor (n) with an increase measurement temperature indicate the presence of an inhomogeneous SB. The degree of inhomogeneity of the Schottky barrier depends on the annealing temperature, and it is at its lowest for 500-℃ thermal treatment. The degree of inhomogeneity of the SB could reveal effects of thermal treatments on Schottky contacts in other aspects.
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Received: 02 April 2014
Revised: 09 July 2014
Accepted manuscript online:
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PACS:
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73.40.Ns
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(Metal-nonmetal contacts)
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Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61106080 and 61275042) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2013ZX02305). |
Corresponding Authors:
Shen Hua-Jun
E-mail: shenhuajun@ime.ac.cn
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Cite this article:
Han Lin-Chao (韩林超), Shen Hua-Jun (申华军), Liu Ke-An (刘可安), Wang Yi-Yu (王弋宇), Tang Yi-Dan (汤益丹), Bai Yun (白云), Xu Heng-Yu (许恒宇), Wu Yu-Dong (吴煜东), Liu Xin-Yu (刘新宇) Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H–SiC contacts 2014 Chin. Phys. B 23 127302
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