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Chinese Physics, 2005, Vol. 14(8): 1639-1643    DOI: 10.1088/1009-1963/14/8/031
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

I-V-T studies on Ni-silicide/n-Si(100) contacts formed by Ti-Ni-Si solid state reaction

Zhu Shi-Yang (竺士炀), Ru Guo-Ping (茹国平), Zhou Jia (周嘉), Huang Yi-Ping (黄宜平)
Department of Microelectronics, Fudan University, Shanghai 200433, China
Abstract  The current--voltage (I--V) characteristics of Ni silicide/n-Si(100) contacts,which were formed from solid-state reaction of Ni--Si with a thin Ti capping layer at different annealing temperatures, were measured at temperatures ranging from 80K to room temperature. The low temperature I--V curves exhibit an excess current at the low bias region which is significantly larger than that predicted by the traditional thermionic emission (TE) model. A double-Schottky barrier height (SBH) model simplified from Tung's pinch-off model is used to analyse the measured I--V curves, from which the extent of the SBH inhomogeneity can be extracted. Higher annealing temperature results in larger SBH inhomogeneity, implying the degradation of the silicide film uniformity. The thin Ti capping layer increases slightly both the NiSi phase transfer temperature and the thermal stability of the formed NiSi film.
Keywords:  Schottky barrier      metal-semiconductor contact      current-voltage characteristics  
Received:  27 January 2005      Revised:  11 March 2005      Accepted manuscript online: 
PACS:  73.40.Ns (Metal-nonmetal contacts)  
  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
  79.40.+z (Thermionic emission)  
  81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)  
  68.60.Dv (Thermal stability; thermal effects)  
Fund: Project supported by National Natural Science Foundation of China (Grant No 60106001).

Cite this article: 

Zhu Shi-Yang (竺士炀), Ru Guo-Ping (茹国平), Zhou Jia (周嘉), Huang Yi-Ping (黄宜平) I-V-T studies on Ni-silicide/n-Si(100) contacts formed by Ti-Ni-Si solid state reaction 2005 Chinese Physics 14 1639

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