Please wait a minute...
Chin. Phys. B, 2009, Vol. 18(12): 5474-5478    DOI: 10.1088/1674-1056/18/12/057
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Analytical model for reverse characteristics of 4H--SiC merged PN--Schottky (MPS) diodes

Song Qing-Wen(宋庆文),Zhang Yu-Ming(张玉明),Zhang Yi-Men(张义门), ü Hong-Liang(吕红亮),Chen Feng-Ping(陈丰平), and Zheng Qing-Li(郑庆立)
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  A new analytical model for reverse characteristics of 4H--SiC merged PN--Schottky diodes (MPS or JBS) is developed. To accurately calculate the reverse characteristics of the 4H--SiC MPS diode, the relationship between the electric field at the Schottky contact and the reverse bias is analytically established by solving the cylindrical Poisson equation after the channel has pinched off. The reverse current density calculated from the Wentzel--Kramers--Brillouin (WKB) theory is verified by comparing it with the experimental result, showing that they are in good agreement with each other. Moreover, the effects of P-region spacing (S) and P-junction depth (Xj) on the characteristics of 4H--SiC MPS are analysed, and are particularly useful for optimizing the design of the high voltage MPS diodes.
Keywords:  4H--SiC      merged PN--Schottky      reverse characteristics      tunnelling current  
Received:  21 March 2009      Revised:  19 May 2009      Accepted manuscript online: 
PACS:  85.30.Kk (Junction diodes)  
  02.60.Lj (Ordinary and partial differential equations; boundary value problems)  
  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the Xi'an Applied Materials Innovation Fund (Grant No XA-AM-200702).

Cite this article: 

Song Qing-Wen(宋庆文),Zhang Yu-Ming(张玉明),Zhang Yi-Men(张义门), ü Hong-Liang(吕红亮),Chen Feng-Ping(陈丰平), and Zheng Qing-Li(郑庆立) Analytical model for reverse characteristics of 4H--SiC merged PN--Schottky (MPS) diodes 2009 Chin. Phys. B 18 5474

[1] Two-dimensional analysis of the interface states effects on current gain for 4H-SiC bipolar junction transistor
Zhang You-Run(张有润), Zhang Bo(张波), Li Zhao-Ji(李肇基), and Deng Xiao-Chuan(邓小川). Chin. Phys. B, 2010, 19(6): 067102.
[2] Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension
Song Qing-Wen(宋庆文), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), Guo Hui(郭辉), Li Zhi-Yun(李志云), and Wang Zhong-Xu(王中旭). Chin. Phys. B, 2010, 19(4): 047201.
[3] Simulation research on offset field-plate used as edge termination in 4H-SiC merged PiN-Schottky diodes
Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), LÜ Hong-Liang(吕红亮), and Song Qing-Wen(宋庆文). Chin. Phys. B, 2010, 19(4): 047305.
[4] The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact
Liu Fang(刘芳), Wang Tao(王涛), Shen Bo(沈波), Huang Sen(黄森), Lin Fang(林芳), Ma Nan(马楠), Xu Fu-Jun(许福军), Wang Peng(王鹏), and Yao Jian-Quan(姚建铨). Chin. Phys. B, 2009, 18(4): 1614-1617.
[5] Physical simulations and experimental results of 4H—SiC MESFETs on high purity semi-insulating substrates
Chen Gang(陈刚), Bai Song(柏松), Li Zhe-Yang(李哲洋), Wu Peng(吴鹏), Chen Zheng(陈征), and Han Pin(韩平). Chin. Phys. B, 2009, 18(10): 4474-4478.
No Suggested Reading articles found!