Characterization of ion-implanted 4H-SiC Schottky barrier diodes

doi:10.1088/1674-1056/19/1/017203

Abstract Ion-implantation layers are fabricated by multiple nitrogen ion-implantations (3 times for sample A and 4 times for sample B) into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I--V and C--V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs) fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I--V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal--semiconductor field-effect transistors (MESFETs), and SiC static induction transistors (SITs). The parameters of the diodes are extracted from the forward I--V and C--V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance $R_{\rm s}$ are 11.9 and 1.0 kΩ respectively. The values of barrier height $\phi _{\rm B}$ of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I--V method and 1.14 and 0.93 eV obtained by the C--V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2% and 4% respectively extracted from C--V testing results.

Keywords: silicon carbide ion-implantation Schottky barrier diodes barrier height

Received: 19 March 2009
Revised: 08 May 2009
Accepted manuscript online:

PACS:	68.55.Ln	(Defects and impurities: doping, implantation, distribution, concentration, etc.)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Hi	(Surface barrier, boundary, and point contact devices)
	85.30.Kk	(Junction diodes)
	85.30.Tv	(Field effect devices)

Cite this article:

Wang Shou-Guo(王守国), Zhang Yan(张岩), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) Characterization of ion-implanted 4H-SiC Schottky barrier diodes 2010 Chin. Phys. B 19 017203

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Characterization of ion-implanted 4H-SiC Schottky barrier diodes

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