Modulation of WNx/Ge Schottky barrier height by varying N composition of tungsten nitride

doi:10.1088/1674-1056/24/7/077306

Abstract Modulation of the Schottky barrier heights was successfully demonstrated for WN_x/p-Ge and WN_x/n-Ge contacts by increasing the nitrogen component in the WN_x films. The WN_0.38/p-Ge contact exhibits rectifying characteristic and an apparent Schottky barrier of 0.49 eV while the WN_0.38/n-Ge Schottky contact exhibits quasi-Ohmic current–voltage characteristics. Dipoles formed at the contact interface by the difference of the Pauling electronegativities of Ge and N are confirmed to alleviate the Fermi-level pinning effect.

Keywords: germanium Fermi-level pinning Schottky barrier height modulation tungsten nitride

Received: 22 December 2014
Revised: 02 February 2015
Accepted manuscript online:

PACS:	73.40.Sx	(Metal-semiconductor-metal structures)
	73.40.Ei	(Rectification)
	73.61.At	(Metal and metallic alloys)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61176092 and 61474094), the National Basic Research Program of China (Grant Nos. 2012CB933503 and 2012CB632103), and the National Natural Science Foundation of China-National Research Foundation of Korea Joint Research Project (Grant No. 11311140251).

Corresponding Authors: Huang Wei, Li Cheng
E-mail: weihuang@xmu.edu.cn;lich@xmu.edu.cn

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Wei Jiang-Bin (魏江镔), Chi Xiao-Wei (池晓伟), Lu Chao (陆超), Wang Chen (王尘), Lin Guang-Yang (林光杨), Wu Huan-Da (吴焕达), Huang Wei (黄巍), Li Cheng (李成), Chen Song-Yan (陈松岩), Liu Chun-Li (刘春莉) Modulation of WN_x/Ge Schottky barrier height by varying N composition of tungsten nitride 2015 Chin. Phys. B 24 077306

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Modulation of WNx/Ge Schottky barrier height by varying N composition of tungsten nitride

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Modulation of WN_x/Ge Schottky barrier height by varying N composition of tungsten nitride