A new aluminum iron oxide Schottky photodiode designed via sol-gel coating method

doi:10.1088/1674-1056/23/5/057504

Abstract A novel aluminum iron oxide (Al/AlFe₂O₄/p-Si) Schottky photodiode was successfully fabricated via the sol-gel coating process. The microstructure of the spinel ferrite (AlFe₂O₄) was examined by atomic force microscopy. The current-voltage characteristics of the fabricated photodiode were studied under dark and different illumination conditions at room temperature. By using the thermionic emission theory, the forward bias I-V characteristics of the photodiode are analyzed to determine the main electrical parameters such as the ideality factor (n) and barrier height (Φ_B0) of the photodiode. The values of n and Φ_B0 for all conditions are found to be about 7.00 and 0.76 eV, respectively. In addition, the values of series resistance (R_s) are determined using Cheung's method and Ohm's law. The values of R_s and shunt resistance (R_sh) are decreased with the increase of illumination intensity. These new spinel ferrites will open a new avenue to other spinel structure materials for optoelectronic devices in the near future.

Keywords: spinel ferrite Schottky photodiode I-V characteristics barrier height

Received: 11 July 2013
Revised: 20 November 2013
Accepted manuscript online:

PACS:	75.50.Gg	(Ferrimagnetics)
	85.60.Dw	(Photodiodes; phototransistors; photoresistors)
	84.37.+q	(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)

Corresponding Authors: A. Tataroğlu
E-mail: ademt@gazi.edu.tr

About author: 75.50.Gg; 85.60.Dw; 84.37.+q; 73.30.+y

Cite this article:

A. Tataroğlu, A. A. Hendi, R. H. Alorainy, F. Yakuphanoğlu A new aluminum iron oxide Schottky photodiode designed via sol-gel coating method 2014 Chin. Phys. B 23 057504

[1]	Adurodija F O, Semple L and Bruning R 2005 Thin Solid Films 492 153
[2]	Chen H Y and Wu J H 2012 Appl. Surf. Sci. 258 4844
[3]	Minami T 2005 Semicond. Sci. Technol. 20 S35
[4]	Bhosale C H, Kambale A V, Kokate A V and Rajpure K Y 2005 Mater. Sci. Eng. B 122 67
[5]	Champness C H and Xu Z 1998 Appl. Surf. Sci. 123-124 485
[6]	Stadler A 2012 Materials 5 661
[7]	Cruz J S, Delgado G T, Perez R C, Romero C I Z and Angel O Z 2007 Thin Solid Films 515 5381
[8]	Bian J M, Li X M, Gao X D, Yu W D and Chen L D 2004 Appl. Phys. Lett. 84 541
[9]	Subramanyam T K, Uthanna S and Naidu B S 1998 Mater. Lett. 35 214
[10]	Gupta R K, Cavas M and Yakuphanoğlu F 2012 Spectrochimica Acta Part A 95 107
[11]	Lind C, Gates S D, Pedoussaut N M and Baiz T I 2010 Materials 3 2567
[12]	Ellmer K 2001 J. Phys. D: Appl. Phys. 34 3097
[13]	Sileo E E, Rodenas L G, Paiva-Santos C O, Stephens P W, Morando P J and Blesa M A 2006 J. Solid State Chem. 179 2237
[14]	Valenzuela R 1994 Magnetic Ceramics (Cambridge: Cambridge University Press)
[15]	Soylu M, Al-Ghamdi A A and Yakuphanoğlu F 2012 Microelectronic Eng. 99 50
[16]	Akkal B, Benemara Z, Bachir Bouiadjra N, Tizi S and Gruzza B 2006 Appl. Surf. Sci. 253 1065
[17]	Osvald J 2006 Solid State Electron. 50 228
[18]	Pür F Z and Tataroğlu A 2012 Phys. Scr. 86 035802
[19]	Demirezen S, Altindal Ş and Uslu İ 2013 Current Appl. Phys. 13 53
[20]	Rhoderick E H and Williams R H 1988 Metal-Semiconductor Contacts (2nd edn.) (Oxford: Clarendon Press)
[21]	Sze S M 1981 Physics of Semiconductor Devices (2nd edn.) (New York: John Wiley & Sons)
[22]	Wang S G, Zhang Y, Zhang Y M and Zhang Y M 2010 Chin. Phys. B 19 017203
[23]	Chand S and Bala S 2005 Semicond. Sci. Technol. 20 1143
[24]	Tataroğlu A 2013 Chin. Phys. B 22 068402
[25]	Chand S 2004 Semicond. Sci. Technol. 19 82
[26]	Mamor M 2009 J. Phys. Condens. Matter 21 335802
[27]	Gupta R K, Al-Ghamdi A A, Al-Hartomi O, Hasar H, El-Tantawy F and Yakuphanoğlu F 2012 Synth. Met. 162 981
[28]	Reddy V R, Reddy M S P, Lakshmi B P and Kumar AA 2011 J. Alloys Compd. 509 8001
[29]	Yakuphanoğlu F and Senkal B F 2009 Synthetic Metals 159 311
[30]	Kazim S, Alia V, Zulfequar M, Haq M M and Husain M 2007 Physica B 393 310
[31]	Uslu H, Altindal Ş, Polat İ, Bayrak and Bacaksiz E 2010 J. Alloys Compd. 509 5555
[32]	Farag A A M, Ashery A, Ahmed E M A and Salem M A 2010 J. Alloys Compd. 495 116
[33]	Ocak Y S, Kulakçi M, Kiliçoğlu T, Turan R and Akkiliç K 2009 Synth. Met. 159 1603
[34]	Taşçioğlu İ, Aydemir U and Altindal Ş 2010 J. Appl. Phys. 108 064506
[35]	Phan D T, Gupta R K, Chung G S, Al-Ghamdi A A, Al-Hartomy O, El-Tantawy F and Yakuphanoğlu F 2012 Solar Energy 86 2961
[36]	Cheung S K and Cheung N W 1986 Appl. Phys. Lett. 49 85
[37]	Gupta R K and Yakuphanoğlu F 2012 Solar Energy 86 1539
[38]	Aldemir D A, Esen M, Kökçe A, Karataş Ş and Özdemir A F 2011 Thin Solid Films 519 6004
[39]	Tataroğlu A, Altindal S and Bülbül M M 2006 Nucl. Instr. and Meth. A 568 863
[40]	Sochacki M, Kolendo A, Szmidt J and Werbowy A 2005 Solid State Electron. 49 585
[41]	Karataş Ş and Altindal Ş 2005 Mater. Sci. Eng. B 122 133
[42]	Donoval D, Barus M and Zdimal M 1991 Solid State Electron. 34 1365
[43]	Karimov K S, Ahmed M M, Moiz S A and Federov M I 2005 Sol. Energy Mater. Sol. Cells 87 61
[44]	Mansoura Sh A and Yakuphanoğlu F 2012 Solid State Sci. 14 121
[45]	Janardham V, Lee H K, Shim K H, Hong H B, Lee S H, Ahn K S and Choi C J 2010 J. Alloys Compd. 504 146

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A new aluminum iron oxide Schottky photodiode designed via sol-gel coating method

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