Abstract This paper describes the fabrication and characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs). SBDs are fabricated by nitrogen ion implantation into p-type 4H-SiC epitaxial layer. The implant depth profile is simulated using the Monte Carlo simulator TRIM. Measurements of the reverse I－V characteristics demonstrate a low reverse current, that is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors, and SiC static induction transistors. The parameters of the diodes are extracted from the forward I－V characteristics. The barrier height $\phi_{\rm b}$ of Ti/4H-SiC is 0.95 eV.
Received: 13 June 2002
Revised: 13 November 2002
Accepted manuscript online:
PACS:
81.05.-t
(Specific materials: fabrication, treatment, testing, and analysis)
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