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Chin. Phys. B, 2011, Vol. 20(2): 027305    DOI: 10.1088/1674-1056/20/2/027305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Erratum to "Quantum compact model for thin-body double-gate Schottky barrier MOSFETs"

Luan Su-Zhen(栾苏珍)a)b) and Liu Hong-Xia(刘红侠)a)b) 
School of Microelectronics, Xidian University, Xi'an 710071, China; Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
Keywords:  Schottky barrier      quantum mechanism effect      effective mass      electron density  
Accepted manuscript online: 
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
  73.40.Gk (Tunneling)  
  85.30.Tv (Field effect devices)  

Cite this article: 

Luan Su-Zhen(栾苏珍) and Liu Hong-Xia(刘红侠) vgluept Erratum to "Quantum compact model for thin-body double-gate Schottky barrier MOSFETs" 2011 Chin. Phys. B 20 027305

[1] Luan S Z and Liu H X 2008 Chin. Phys. B 17 3079
[2] Reinaldo A V 2006 IEEE Trans. Electron Device 53 1596
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