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Erratum to "Quantum compact model for thin-body double-gate Schottky barrier MOSFETs" |
Luan Su-Zhen(栾苏珍)a)b) and Liu Hong-Xia(刘红侠)a)b) |
a School of Microelectronics, Xidian University, Xi'an 710071, China; b Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China |
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Accepted manuscript online:
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PACS:
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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73.40.Gk
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(Tunneling)
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85.30.Tv
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(Field effect devices)
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Cite this article:
Luan Su-Zhen(栾苏珍) and Liu Hong-Xia(刘红侠) vgluept Erratum to "Quantum compact model for thin-body double-gate Schottky barrier MOSFETs" 2011 Chin. Phys. B 20 027305
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[1] |
Luan S Z and Liu H X 2008 Chin. Phys. B 17 3079
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[2] |
Reinaldo A V 2006 IEEE Trans. Electron Device 53 1596
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