Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction

doi:10.1088/1674-1056/25/2/027304

Abstract We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co₂MnSi and the germanium (Ge) channel modulates the Schottky barrier height and the resistance-area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height (SBH) occurs following the insertion of the graphene layer between Co₂MnSi and Ge. The electron SBH is modulated in the 0.34 eV-0.61 eV range. Furthermore, the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility.

Keywords: Co₂MnSi/graphene/n-Ge junction Fermi-level depinning Schottky barrier height metal-induced gap states (MIGS)

Received: 17 September 2015
Revised: 16 November 2015
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	72.25.Dc	(Spin polarized transport in semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61504107) and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 3102014JCQ01059 and 3102015ZY043).

Corresponding Authors: Gui-fang Li
E-mail: gfli@nwpu.edu.cn

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Gui-fang Li(李桂芳), Jing Hu(胡晶), Hui Lv(吕辉), Zhijun Cui(崔智军), Xiaowei Hou(候晓伟), Shibin Liu(刘诗斌), Yongqian Du(杜永乾) Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co₂MnSi/graphene/n-Ge junction 2016 Chin. Phys. B 25 027304

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Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction

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Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co₂MnSi/graphene/n-Ge junction