CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction |
Wang Shuan-Hu (王拴虎)a, Zhang Xu (张勖)a, Zou Lv-Kuan (邹吕宽)a, Zhao Jing (赵靓)a, Wang Wen-Xin (王文鑫)a b, Sun Ji-Rong (孙继荣)a |
a Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
b State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China |
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Abstract Lateral resistance of silicon-based p-type and n-type Schottky junctions is investigated. After one electrode on a metallic film is irradiated, the differential lateral resistance of the system is dependent on the direction of the bias current: it keeps constant in one direction and decreases in the opposite direction. By systematically investigating the electrical potential changes in silicon and the junction, we propose a new mechanism based on light-controlled leak current. Our work provides an insight into the nature of this phenomenon and will facilitate the advanced design of switchable devices.
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Received: 19 March 2015
Revised: 27 April 2015
Accepted manuscript online:
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PACS:
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73.40.Sx
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(Metal-semiconductor-metal structures)
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73.50.Pz
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(Photoconduction and photovoltaic effects)
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74.25.F-
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(Transport properties)
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Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CB921801) and the National Natural Science Foundation of China (Grant No. 111374348). |
Corresponding Authors:
Wang Shuan-Hu
E-mail: wshtzg@126.com
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Cite this article:
Wang Shuan-Hu (王拴虎), Zhang Xu (张勖), Zou Lv-Kuan (邹吕宽), Zhao Jing (赵靓), Wang Wen-Xin (王文鑫), Sun Ji-Rong (孙继荣) Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction 2015 Chin. Phys. B 24 107307
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