4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination

doi:10.1088/1674-1056/23/5/057102

Abstract Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes (SBDs) with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon (SIPOS) FP termination has been fabricated. The relative dielectric constant of the SIPOS dielectric first used in 4H-SiC devices is 10.4, which is much higher than that of the SiO₂ dielectric, leading to benefitting the performance of devices. The breakdown voltage of the fabricated SBD could reach 1200 V at leakage current 20 uA, about 70% of the theoretical breakdown voltage. Meanwhile, both of the simulation and experimental results show that the length of the SIPOS FP termination is an important factor for structure design.

Keywords: 4H-SiC Schottky-barrier diodes semi-insulating polycrystalline silicon field plates termination

Received: 18 July 2013
Revised: 25 November 2013
Accepted manuscript online:

PACS:	71.20.Nr	(Semiconductor compounds)
	73.40.Sx	(Metal-semiconductor-metal structures)
	77.22.Jp	(Dielectric breakdown and space-charge effects)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61234006 and 61274079), the Key Specific Projects of Ministry of Education of China (Grant No. 625010101), and the Science Project of State Grid, China (Grant No. SGRI-WD-71-13-004).

Corresponding Authors: Song Qing-Wen
E-mail: qwsong@xidian.edu.cn

About author: 71.20.Nr; 73.40.Sx; 77.22.Jp

Cite this article:

Yuan Hao (袁昊), Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Song Qing-Wen (宋庆文), Yang Fei (杨霏), Wu Hao (吴昊) 4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination 2014 Chin. Phys. B 23 057102

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4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination

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