Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery

doi:10.1088/1674-1056/21/1/017303

Abstract In this paper, a 4H-SiC semi-superjunction (SJ) Schottky barrier diode is analysed and simulated. The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ structures, which can be achieved without increasing the process difficulty. The simulation results show that the specific on-resistance and the softness factor depend on the aspect and thickness ratios, and that by using the semi-SJ structure, specific on-resistance can be reduced without decreasing the softness factor. It is observed that a trade-off exists between the specific on-resistance and the softness of the diode.

Keywords: 4H-SiC semi-superjunction Schottky barrier diode softness factor

Received: 24 March 2011
Revised: 05 May 2011
Accepted manuscript online:

PACS:	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	73.40.Sx	(Metal-semiconductor-metal structures)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60876050) and the Research Fund for Excellent Doctor Degree Thesis of Xi’an University of Technology, China.

Cite this article:

Cao Lin(曹琳), Pu Hong-Bin(蒲红斌), Chen Zhi-Ming(陈治明), and Zang Yuan(臧源) Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery 2012 Chin. Phys. B 21 017303

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Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery

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