Characterization of vertical Au/β -Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

doi:10.1088/1674-1056/25/1/017201

Abstract High-resistivity β -Ga₂O₃ thin films were grown on Si-doped n-type conductive β -Ga₂O₃ single crystals by molecular beam epitaxy (MBE). Vertical-type Schottky diodes were fabricated, and the electrical properties of the Schottky diodes were studied in this letter. The ideality factor and the series resistance of the Schottky diodes were estimated to be about 1.4 and 4.6× 10⁶ Ω . The ionized donor concentration and the spreading voltage in the Schottky diodes region are about 4× 10¹⁸ cm^-3 and 7.6 V, respectively. The ultra-violet (UV) photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination. A photoresponsivity of 1.8 A/W and an external quantum efficiency of 8.7× 10²% were observed at forward bias voltage of 3.8 V, the proper driving voltage of read-out integrated circuit for UV camera. The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive β -Ga₂O₃ thin films and the n-type conductive β -Ga₂O₃ single-crystal substrate.

Keywords: gallium oxides thin films Schottky diode ultraviolet photodetector

Received: 17 July 2015
Revised: 31 August 2015
Accepted manuscript online:

PACS:	72.20.-i	(Conductivity phenomena in semiconductors and insulators)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	73.40.Ei	(Rectification)
	07.07.Df	(Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)

Fund: Project supported by the National Nature Science Foundation of China (Grant No. 61223002) the Science and Technology Commission of Shanghai Municipality, China (Grant No. 13111103700), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 2012018530003).

Corresponding Authors: X Z Liu, C T Xia
E-mail: xzliu@uestc.edu.cn;xia ct@siom.ac.cn

Cite this article:

X Z Liu(刘兴钊), C Yue(岳超), C T Xia(夏长泰), W L Zhang(张万里) Characterization of vertical Au/β -Ga₂O₃ single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer 2016 Chin. Phys. B 25 017201

[1]	Higashiwaki M, Sasaki K, Kuramata A, Masui T and Yamakoshi S 2012 Appl. Phys. Lett. 100 013504
[2]	Ozgur U, Alivov Y I, Liu C, Teke A, Reshchikov M A, Dogan S, Avrutin V, Cho S J and Morkoc H 2005 J. Appl. Phys. 98 041301
[3]	Hsu C L and Lu Y C 2012 Nanoscale 4 5710
[4]	Horng R H and Ravadgar P 2013 Proc. SPIE 8626 86260D
[5]	Matsuzaki K, Yanagi H and Kamiya T 2006 Appl. Phys. Lett. 88 092106
[6]	Weng W Y, Hsueh T J, Chang S J Huang G J and Hsueh H T 2011 IEEE Photon Technol. Lett. 23 444
[7]	Li Y B, Tokizono T, Liao M Y, Zhong M, Koide Y, Yamada I and Delaunay J J 2010 Adv. Funct. Mater. 20 3972
[8]	Li L, Auer E, Liao M Y, Fang X S, Zhai T Y, Gautam U K, Lugstein A, Koide Y, Bando Y and Golberg D 2011 Nanoscale 3 1120
[9]	Galazka Z, Uecker R, Irmscher K, Albrecht M, Klimm D, Pietsch M, Brutzam M, Bertram R, Ganschow S and Fornari R 2010 Cryst. Res. Technol. 45 1229
[10]	Zhang J G, Xia C T, Deng Q, Xu W S, Shi H S Wu F and Xu J 2006 J. Phys. Chem. Solids 67 1656
[11]	Oshima T, Okuno T, Arai N, Suzuki N, Ohira S and Fujita S 2008 Appl. Phys. Exp. 1 011202
[12]	Suzuki R, Nakagomi S and Kokubun Y 2011 Appl. Phys. Lett. 98 131114
[13]	Hao J and Cocivera M 2002 J. Phys. D: Appl. Phys. 35 433
[14]	Ravadgar P, Horng R H and Wang T Y 2012 ECS J. Solid State Sci. Techn. 1 N58
[15]	Oshima T, Okuno T and Fujita S 2007 Jpn. J. Appl. Phys. 46 7217
[16]	Tsai M Y, Bierwagen O, White M E and Speck J S 2010 J. Vac. Sci. Technol. A 28 354
[17]	Cheung S K and Cheung N W 1986 Appl. Phys. Lett. 49 85
[18]	Lin Y J, Luo J and Hung H C 2013 Appl. Phys. Lett. 102 193511

[1]	Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector Hongyu Ma(马宏宇), Kewei Liu(刘可为), Zhen Cheng(程祯), Zhiyao Zheng(郑智遥), Yinzhe Liu(刘寅哲), Peixuan Zhang(张培宣), Xing Chen(陈星), Deming Liu(刘德明), Lei Liu(刘雷), and Dezhen Shen(申德振). Chin. Phys. B, 2021, 30(8): 087303.
[2]	Dual-wavelength ultraviolet photodetector based on vertical (Al,Ga)N nanowires and graphene Min Zhou(周敏), Yukun Zhao(赵宇坤), Lifeng Bian(边历峰), Jianya Zhang(张建亚), Wenxian Yang(杨文献), Yuanyuan Wu(吴渊渊), Zhiwei Xing(邢志伟), Min Jiang(蒋敏), and Shulong Lu(陆书龙). Chin. Phys. B, 2021, 30(7): 078506.
[3]	Graphene/SrTiO₃ interface-based UV photodetectors with high responsivity Heng Yue(岳恒), Anqi Hu(胡安琪), Qiaoli Liu(刘巧莉), Huijun Tian(田慧军), Chengri Hu(胡成日), Xiansong Ren(任显松), Nianyu Chen(陈年域), Chen Ge(葛琛), Kuijuan Jin(金奎娟), and Xia Guo(郭霞). Chin. Phys. B, 2021, 30(3): 038502.
[4]	A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide Jiao Huang(黄郊), Li-Wei Guo(郭丽伟), Wei Lu(芦伟), Yong-Hui Zhang(张永晖), Zhe Shi(史哲), Yu-Ping Jia(贾玉萍), Zhi-Lin Li(李治林), Jun-Wei Yang(杨军伟), Hong-Xiang Chen(陈洪祥), Zeng-Xia Mei(梅增霞), Xiao-Long Chen(陈小龙). Chin. Phys. B, 2016, 25(6): 067205.
[5]	A novel integrated ultraviolet photodetector based on standard CMOS process Wang Han (汪涵), Jin Xiang-Liang (金湘亮), Chen Chang-Ping (陈长平), Tian Man-Fang (田满芳), Zhu Ke-Han (朱柯翰). Chin. Phys. B, 2015, 24(3): 038501.
[6]	High response Schottky ultraviolet photodetector formed by PEDOT:PSS transparent electrode contacts to Mg_0.1Zn_0.9O Hu Zuo-Fu (胡佐富), Wu Huai-Hao (吴怀昊), Lv Yan-Wu (吕燕伍), Zhang Xi-Qing (张希清). Chin. Phys. B, 2015, 24(10): 107302.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Characterization of vertical Au/β -Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

Cite this article:

Online attention

Characterization of vertical Au/β -Ga₂O₃ single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer