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Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring |
Wang Xiang-Dong (王向东)a, Deng Xiao-Chuan (邓小川)a, Wang Yong-Wei (王永维)b, Wang Yong (王勇)b, Wen Yi (文译)a, Zhang Bo (张波)a |
a State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
b National Key Laboratory of ASIC, Shijiazhuang 050051, China |
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Abstract This paper describes the successful fabrication of 4H-SiC junction barrier Schottky (JBS) rectifiers with a linearly graded field limiting ring (LG-FLR). Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2 (about 80% of the theoretical value). Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termination, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length.
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Received: 29 July 2013
Revised: 20 November 2013
Accepted manuscript online:
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PACS:
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72.20.Ht
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(High-field and nonlinear effects)
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73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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Fund: Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 61234006). |
Corresponding Authors:
Deng Xiao-Chuan
E-mail: xcdeng@uestc.edu.cn
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About author: 72.20.Ht; 73.30.+y; 85.30.Mn |
Cite this article:
Wang Xiang-Dong (王向东), Deng Xiao-Chuan (邓小川), Wang Yong-Wei (王永维), Wang Yong (王勇), Wen Yi (文译), Zhang Bo (张波) Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring 2014 Chin. Phys. B 23 057203
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