| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness |
| Jia-Hao Chen(陈嘉豪)1, Ying Wang(王颖)1,†, Xin-Xing Fei(费新星)2, Meng-Tian Bao(包梦恬)1, and Fei Cao(曹菲)1 |
1 College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China;
2 The Yangzhou Marine Electronic Instrument Institute, Yangzhou 225001, China |
|
|
|
|
Abstract A method to improve the surge current capability of silicon carbide (SiC) merged PiN Schottky (MPS) diodes is presented and investigated via three-dimensional electro-thermal simulations. When compared with a conventional MPS diode, the proposed structure has a more uniform current distribution during bipolar conduction due to the help of the continuous P+ surface, which can avoid the formation of local hotspots during the surge process. The Silvaco simulation results show that the proposed structure has a 20.29% higher surge capability and a 15.06% higher surge energy compared with a conventional MPS diode. The bipolar on-state voltage of the proposed structure is 4.69 V, which is 56.29% lower than that of a conventional MPS diode, enabling the device to enter the bipolar mode earlier during the surge process. Furthermore, the proposed structure can suppress the occurrence of 'snapback' phenomena when switching from the unipolar to the bipolar operation mode. In addition, an analysis of the surge process of MPS diodes is carried out in detail.
|
Received: 15 August 2022
Revised: 11 December 2022
Accepted manuscript online: 21 December 2022
|
|
PACS:
|
85.30.-z
|
(Semiconductor devices)
|
| |
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
|
| Fund: Project supported by the National Research and Development Program for Major Research Instruments of China (Grant No. 62027814), the National Natural Science Foundation of China (Grant No. 61904045), and Zhejiang Provincial Natural Science Foundation of China (Grant No. LQ20F040004). |
Corresponding Authors:
Ying Wang
E-mail: wangying7711@yahoo.com
|
Cite this article:
Jia-Hao Chen(陈嘉豪), Ying Wang(王颖), Xin-Xing Fei(费新星), Meng-Tian Bao(包梦恬), and Fei Cao(曹菲) Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness 2023 Chin. Phys. B 32 098505
|
[1] Bhatnagar M and Baliga B J 1993 IEEE Transactions on Electron Devices 40 645
[2] Óstling M, Ghandi R and Zetterling C 2011 IEEE International Symposium on Power Semiconductor Devices & Ics, May 23-26, 2011, San Diego, CA, USA, p. 1
[3] Elasser A and Chow T P 2002 Proceedings of the IEEE 90 969
[4] Heinze B, Lutz J, Neumeister M, Rupp R and Holz M 2008 20th International Symposium on Power Semiconductor Devices and IC's, May 18-22, 2008, Oralando FL, USA, p. 245
[5] Banu V, Soler V and Montserrat J 2016 Microelectronics Reliability 64 429
[6] Brunt E V, Barbieri T, Barkley A, Solovey J, Richmond J and Hull B 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, May 13-17, 2018, Chicago, USA, p. 415
[7] Huang X, Wang G, Lee M and Huang A Q 2012 IEEE Energy Conversion Congress and Exposition, September 15-20, 2012, Raleigh, NC, USA, p. 2245
[8] Ren N, Wu J P, Liu L and Sheng K 2020 IEEE Transactions on Power Electronics 35 11316
[9] Alessandro V, Irace A, Breglio G, Spirito P, Bricconi A, Carta R, Raffo D and Merlin L 2006 IEEE International Symposium on Power Semiconductor Devices and IC's, June 4-8, 2006, Naples, Italy, pp. 1
[10] Wu J P, Ren N, Wang H and Sheng K 2019 IEEE Journal of Emerging and Selected Topics in Power Electronics 7 1496
[11] Jiang Y, Sung W, Song X, Ke H and Brunt E V 2016 28th International Symposium on Power Semiconductor Devices and ICs, June 12-16, 2016, Prague, Czech Republic, p. 43
[12] Huang Y and Wachutka G 2016 International Conference on Simulation of Semiconductor Processes and Devices, September 06-08, 2016, Nuremberg, Germany, p. 117
[13] Palanisamy S, Fichtner S, Lutz J, Basler T and Rupp R 2016 28th International Symposium on Power Semiconductor Devices and ICs, June 12-16, 2016, Prague, Czech Republic, p. 235
[14] Huang Y, Erlbacher T, Buettner J and Wachutka G 2016 28th International Symposium on Power Semiconductor Devices and ICs, June 12-16, 2016, Prague, Czech Republic, p. 63
[15] Zhong W, Tang Y, Li C, Chen H and Liu X 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China, November 25-27, 2019, Shenzhen, China, p. 22
[16] Leon J, Perpina X, Banu V, Montserrat J, Berthou M and Vellvehi M 2014 Microelectronics Reliability 54 2207
[17] Snead L L, Nozawa T and Katoh Y 2007 Journal of Nuclear Materials 371 329
[18] ATLAS User's Manual, Silvaco, Santa Clara, CA, USA, 2016
[19] Fichtner S, Lutz J, Basler T, Rupp R and Gerlach R 2014 8th International Conference on Integrated Power Electronics Systems, February 25-27, 2014, Nuremberg, Germany, pp. 1
[20] Zhou F, Xu W, Ren F, Zhou D, Chen D, Zhang R, Zheng Y, Zhu T and Lu H 2021 IEEE Transactions on Power Electronics 36 12163
[21] Jiang X, Zhai D, Chen J, Yuan F, Li Z, He Z, Shen Z J and Wang J 2018 IEEE Energy Conversion Congress and Exposition (ECCE), September 23-27, 2018, Portland, OR, USA, p. 845
[22] Du Q and Tao X 2020 IEEE Transactions on Electron Devices 67 4033
[23] Niwa H, Suda J and Kimoto T 2017 IEEE Transactions on Electron Devices 64 874
[24] Ren N, Liu L, Wu J P and Sheng K 2021 IEEE Transactions on Electron Devices 68 5687
[25] Wang A T, Bai Y, Tang Y D, Li C Z, Han Z L, Lu J, Chen H, Tian X L, Yang C Y, Hao J L and Liu X Y 2021 IEEE Transactions on Electron Devices 68 6330 |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
