Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers

doi:10.1088/1674-1056/24/9/097202

Abstract A new epitaxial structure of AlGaInP-based light-emitting diode (LED) with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide (ITO) and localized Cr deposition beneath the p-pad electrode were used as the current spreading layer and the Schottky current blocking layer (CBL), respectively. The results indicated that ITO and the Schottky CBL improve the total light extraction efficiency by relieving the current density crowding beneath the p-pad electrode. At the current of 20 mA, the light output power of the novel LED was 40% and 19% higher than those of the traditional LED and the new epitaxial LED without CBL. It was also found that the novel LED with ITO and CBL shows better thermal characteristics.

Keywords: light-emitting diodes Schottky current blocking layer current spreading

Received: 06 January 2015
Revised: 01 April 2015
Accepted manuscript online:

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	85.60.Jb	(Light-emitting devices)
	82.45.Qr	(Electrodeposition and electrodissolution)
	78.60.Fi	(Electroluminescence)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11204009) and the Natural Science Foundation of Beijing, China (Grant No. 4142005).

Corresponding Authors: Ma Li
E-mail: mali@emails.bjut.edu.cn

Cite this article:

Ma Li (马莉), Shen Guang-Di (沈光地), Gao Zhi-Yuan (高志远), Xu Chen (徐晨) Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers 2015 Chin. Phys. B 24 097202

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Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers

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